T
Tzu‐Ming Lu Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
17 h-index
243 pubs
867 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Tzu‐Ming Lu's research focuses on the physics and engineering of advanced materials and devices, particularly in the areas of semiconductors and superconductivity. Lu has published research on topics including the quantum Hall effect, spin-orbit coupling in semiconductor heterostructures, and the properties of superconducting transmission line resonators. Lu's work also involves the application of advanced microscopy techniques, such as quantum diamond microscopy, for measuring magnetic fields and characterizing material properties. Another area of investigation is the development of fabrication techniques for novel materials, including inverse metal-assisted chemical etching of germanium and the creation of thin diamond membranes. Lu has a publication record of 243 papers and an h-index of 17. Key collaborators include Shiva Davari and Hugh Churchill, both from the University of Arkansas at Fayetteville.
Metrics
- h-index: 17
- Publications: 243
- Citations: 867
Selected Publications
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Advancing microelectronics through nanoscale science: A perspective on needs and opportunities from the nanoscale science research centers (2025)
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Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication (2025)
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Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures (2025)
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Dipole-Tailored Isomeric Linker Enables Decoupling of Aggregation and Crystallinity in Conjugated Polymers for Stretchable Transistors and Photodiodes (2025)
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Ta2C: A possible candidate of topological superconductor (2025)
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Off-state magnetoresistance in long-channel germanium Schottky-barrier MOSFETs (2025)
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Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates (2025)
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Structural properties and recrystallization effects in ion beam modified B20-type FeGe films (2025)
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Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect (2024)
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Modeling and Simulation of Electrostatics of Ge$_{\text{1-x}}$Sn$_{\text{x}}$ Layers Grown on Ge Substrates (2024)
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Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor (2024)
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Inducing a tunable skyrmion-antiskyrmion system through ion beam modification of FeGe films (2024)
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Suspended Silicon Nitride Platforms for Thermal Sensing Applications in the Limit of Minimized Membrane Thickness (2024)
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Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation (2024)
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Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation (2024)
Collaboration Network
Top Collaborators
Charles Thomas Harris
Sandia National Laboratories (US)
10 shared publications
- Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures
- High kinetic inductance NbTiN superconducting transmission line resonators in the very thin film limit
- Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure
- Optimization of gold germanium (Au0.17Ge0.83) thin films for high sensitivity resistance thermometry
- A PtNiGe resistance thermometer for cryogenic applications
Showing 5 of 10 shared publications
Michael Lilly
Center for Integrated Nanotechnologies (US)
9 shared publications
- Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit Using a Quantum Diamond Microscope and Finite-Element Analysis
- Fabrication of thin diamond membranes by <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"> <mml:msup> <mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">Ne</mml:mi> </mml:mrow> </mml:mrow> <mml:mo>+</mml:mo> </mml:msup> </mml:math> implantation
- Effective out-of-plane <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math> factor in strained-Ge/SiGe quantum dots
- Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing
- Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots
Showing 5 of 9 shared publications
Troy A. Hutchins-Delgado
University of New Mexico (US)
9 shared publications
- Inverse metal-assisted chemical etching of germanium with gold and hydrogen peroxide
- Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers
- Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor
- Characterization of Mn5Ge3 Contacts on a Shallow Ge/SiGe Heterostructure
- Silicon Quantum Photonic Integrated Circuits Comprising Superconducting Nanostripe Single-Photon Detectors
Showing 5 of 9 shared publications
Ping Lu
Sandia National Laboratories (US)
8 shared publications
- Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers
- Path towards a vertical TFET enabled by atomic precision advanced manufacturing.
- Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates
- Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
- Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor
Showing 5 of 8 shared publications
Christopher M. Smyth
Sandia National Laboratories (US)
8 shared publications
- High kinetic inductance NbTiN superconducting transmission line resonators in the very thin film limit
- Optimization of gold germanium (Au0.17Ge0.83) thin films for high sensitivity resistance thermometry
- Resilience of monolayer MoS2 memtransistor under heavy ion irradiation
- Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation
- Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO<sub>2</sub>Release Layer
Showing 5 of 8 shared publications
Jiun‐Yun Li
National Taiwan University (TW)
7 shared publications
- Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures
- Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure
- Effective out-of-plane <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math> factor in strained-Ge/SiGe quantum dots
- Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots
- Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
Showing 5 of 7 shared publications
Scott Schmucker
Sandia National Laboratories (US)
6 shared publications
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
- Path towards a vertical TFET enabled by atomic precision advanced manufacturing.
- Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
- Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor
- Path Towards a Vertical TFET Enabled by Atomic Precision Advanced Manufacturing
Showing 5 of 6 shared publications
Jeffrey Ivie
Sandia National Laboratories (US)
6 shared publications
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
- Path towards a vertical TFET enabled by atomic precision advanced manufacturing.
- Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
- Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor
- Path Towards a Vertical TFET Enabled by Atomic Precision Advanced Manufacturing
Showing 5 of 6 shared publications
DeAnna Campbell
Sandia National Laboratories (US)
6 shared publications
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
- Path towards a vertical TFET enabled by atomic precision advanced manufacturing.
- Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
- Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor
- Path Towards a Vertical TFET Enabled by Atomic Precision Advanced Manufacturing
Showing 5 of 6 shared publications
Peter Sharma
Sandia National Laboratories (US)
6 shared publications
- Optimization of gold germanium (Au0.17Ge0.83) thin films for high sensitivity resistance thermometry
- Inducing a tunable skyrmion-antiskyrmion system through ion beam modification of FeGe films
- Suspended Silicon Nitride Platforms for Thermal Sensing Applications in the Limit of Minimized Membrane Thickness
- Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor
- Sensing performance of sub-100-nm vanadium oxide films for room temperature thermal detection applications
Showing 5 of 6 shared publications
Dwight Luhman
5 shared publications
- Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers
- Effective out-of-plane <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math> factor in strained-Ge/SiGe quantum dots
- Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots
- Measurement of the out-of-plane g-factor in strained Ge/SiGe using single-hole quantum dots.
- Leveraging Spin-Orbit Coupling in Ge/SiGe Heterostructures for Quantum Information Transfer
Shashank Misra
Sandia National Laboratories (US)
5 shared publications
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
- Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
- Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor
- Path Towards a Vertical TFET Enabled by Atomic Precision Advanced Manufacturing
- Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor.
Pauli Kehayias
MIT Lincoln Laboratory (US)
5 shared publications
- Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit Using a Quantum Diamond Microscope and Finite-Element Analysis
- Fabrication of thin diamond membranes by <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"> <mml:msup> <mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">Ne</mml:mi> </mml:mrow> </mml:mrow> <mml:mo>+</mml:mo> </mml:msup> </mml:math> implantation
- Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing
- Advancing microelectronics through nanoscale science: A perspective on needs and opportunities from the nanoscale science research centers
- Electron Spin Resonance of Nanoscale Materials using Nitrogen Vacancy Ensembles in Diamond
Andrew Mounce
Sandia National Laboratories (US)
5 shared publications
- Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit Using a Quantum Diamond Microscope and Finite-Element Analysis
- Fabrication of thin diamond membranes by <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"> <mml:msup> <mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">Ne</mml:mi> </mml:mrow> </mml:mrow> <mml:mo>+</mml:mo> </mml:msup> </mml:math> implantation
- Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing
- Advancing microelectronics through nanoscale science: A perspective on needs and opportunities from the nanoscale science research centers
- Electron Spin Resonance of Nanoscale Materials using Nitrogen Vacancy Ensembles in Diamond
Xujiao Gao
Sandia National Laboratories (US)
5 shared publications
- Path towards a vertical TFET enabled by atomic precision advanced manufacturing.
- Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
- Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor
- Path Towards a Vertical TFET Enabled by Atomic Precision Advanced Manufacturing
- Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor.
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