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Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
T
Tzu‐Ming Lu
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
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17 h-index
243 pubs
867 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Tzu‐Ming Lu's research focuses on the physics and engineering of advanced materials and devices, particularly in the areas of semiconductors and superconductivity. Lu has published research on topics including the quantum Hall effect, spin-orbit coupling in semiconductor heterostructures, and the properties of superconducting transmission line resonators. Lu's work also involves the application of advanced microscopy techniques, such as quantum diamond microscopy, for measuring magnetic fields and characterizing material properties. Another area of investigation is the development of fabrication techniques for novel materials, including inverse metal-assisted chemical etching of germanium and the creation of thin diamond membranes. Lu has a publication record of 243 papers and an h-index of 17. Key collaborators include Shiva Davari and Hugh Churchill, both from the University of Arkansas at Fayetteville.
Metrics
- h-index: 17
- Publications: 243
- Citations: 867
Selected Publications
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Deep generative learning of magnetic frustration in artificial spin ice from magnetic force microscopy images (2026)
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Few-shot aircraft skin defect segmentation via CLIP-guided prior masks and hierarchical purification decoder (2025)
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Advancing microelectronics through nanoscale science: A perspective on needs and opportunities from the nanoscale science research centers (2025)
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Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication (2025)
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InAs sidewall tunnel diodes enabled by surface states (2025)
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Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures (2025)
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Design and Simulation of Superconducting Nanowire Single-Photon Detectors Integrated with Photonic Crystal Waveguides on GaAs Substrates (2025)
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Tailoring aggregation behavior and crystalline structure of stretchable polymer semiconductors via a novel Lewis acid dopant (2025)
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Dipole-Tailored Isomeric Linker Enables Decoupling of Aggregation and Crystallinity in Conjugated Polymers for Stretchable Transistors and Photodiodes (2025)
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Ta2C: A possible candidate of topological superconductor (2025)
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Off-state magnetoresistance in long-channel germanium Schottky-barrier MOSFETs (2025)
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Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates (2025)
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Structural properties and recrystallization effects in ion beam modified B20-type FeGe films (2025)
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Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect (2024)
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Modeling and Simulation of Electrostatics of Ge$_{\text{1-x}}$Sn$_{\text{x}}$ Layers Grown on Ge Substrates (2024)
Collaboration Network
Top Collaborators
Michael Lilly
Sandia National Laboratories (US)
37 shared publications
- Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit Using a Quantum Diamond Microscope and Finite-Element Analysis
- Electron spin lifetime of a single antimony donor in silicon
- Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot
- Fabrication of thin diamond membranes by Ne + implantation
- Effective out-of-plane g factor in strained-Ge/SiGe quantum dots
Showing 5 of 37 shared publications
Jiun‐Yun Li
National Taiwan University (TW)
35 shared publications
- Scattering mechanisms in shallow undoped Si/SiGe quantum wells
- Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
- Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures
- Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure
- Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening
Showing 5 of 35 shared publications
DeAnna Campbell
Sandia National Laboratories (US)
29 shared publications
- Atomic Precision Advanced Manufacturing for Digital Electronics
- Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry
- Low thermal budget high-k/metal surface gate for buried donor-based devices
- Quantum Transport in Si:P δ-Layer Wires
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
Showing 5 of 29 shared publications
Yen Chuang
25 shared publications
- Scattering mechanisms in shallow undoped Si/SiGe quantum wells
- Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
- Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure
- Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening
- Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime
Showing 5 of 25 shared publications
Shashank Misra
Sandia National Laboratories (US)
24 shared publications
- Atomic Precision Advanced Manufacturing for Digital Electronics
- Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry
- Low thermal budget high-k/metal surface gate for buried donor-based devices
- Quantum Transport in Si:P δ-Layer Wires
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
Showing 5 of 24 shared publications
Lisa Tracy
23 shared publications
- Atomic Precision Advanced Manufacturing for Digital Electronics
- Path towards a vertical TFET enabled by atomic precision advanced manufacturing.
- Fabrication and Measurement of Atomically Precise Single Electron Islands
- Enhancement-Mode Buried Strained Silicon Channel Double Quantum Dot with Integrated Electrometer
- Engineering Spin-Orbit Interaction in Silicon
Showing 5 of 23 shared publications
Scott Schmucker
Sandia National Laboratories (US)
23 shared publications
- Atomic Precision Advanced Manufacturing for Digital Electronics
- Low thermal budget high-k/metal surface gate for buried donor-based devices
- Quantum Transport in Si:P δ-Layer Wires
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
Showing 5 of 23 shared publications
Malcolm S. Carroll
Sandia National Laboratories (US)
21 shared publications
- Electron spin lifetime of a single antimony donor in silicon
- Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot
- Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
- Enhancement-Mode Buried Strained Silicon Channel Double Quantum Dot with Integrated Electrometer
- Process Development toward Enhancement-Mode Strained-Si/SiGe Double Quantum Dot
Showing 5 of 21 shared publications
D. C. Tsui
Princeton University (US)
20 shared publications
- Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs
- Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
- Valley splitting of Si∕Si1−xGex heterostructures in tilted magnetic fields
- Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors
- In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK
Showing 5 of 20 shared publications
C. W. Liu
National Taiwan University (TW)
20 shared publications
- Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs
- Scattering mechanisms in shallow undoped Si/SiGe quantum wells
- Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
- Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
- Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure
Showing 5 of 20 shared publications
Charles Thomas Harris
Sandia National Laboratories (US)
20 shared publications
- Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures
- High kinetic inductance NbTiN superconducting transmission line resonators in the very thin film limit
- Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure
- Creation of nanoscale magnetic fields using nano-magnet arrays
- Optimization of gold germanium (Au0.17Ge0.83) thin films for high sensitivity resistance thermometry
Showing 5 of 20 shared publications
Evan M. Anderson
Sandia National Laboratories (US)
20 shared publications
- Atomic Precision Advanced Manufacturing for Digital Electronics
- Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry
- Low thermal budget high-k/metal surface gate for buried donor-based devices
- Quantum Transport in Si:P δ-Layer Wires
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
Showing 5 of 20 shared publications
Daniel R. Ward
Sandia National Laboratories (US)
19 shared publications
- Atomic Precision Advanced Manufacturing for Digital Electronics
- Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry
- Low thermal budget high-k/metal surface gate for buried donor-based devices
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
Showing 5 of 19 shared publications
Jeffrey Ivie
Sandia National Laboratories (US)
19 shared publications
- Quantum Transport in Si:P δ-Layer Wires
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
- Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices
- Path towards a vertical TFET enabled by atomic precision advanced manufacturing.
- Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
Showing 5 of 19 shared publications
Andrew Baczewski
18 shared publications
- Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime
- Atomic Precision Advanced Manufacturing for Digital Electronics
- Low thermal budget high-k/metal surface gate for buried donor-based devices
- Effective out-of-plane g factor in strained-Ge/SiGe quantum dots
- Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
Showing 5 of 18 shared publications
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