Aida Sheibani
Researcher
Also affiliated: Smart Material (Germany) (2026); Ferro (United States) (2026)
Faculty Researcher
Research Areas
Biography and Research Information
OverviewAI-generated summary
Aida Sheibani's research focuses on the epitaxial growth of semiconductor thin films, particularly germanium-tin (GeSn) and gallium arsenide (GaAs) on various substrates. Her work involves molecular beam epitaxy (MBE) techniques to achieve high-quality crystalline structures. She has investigated the growth of GeSn alloys on GaAs (001) substrates, including the development of algorithms for graded compositions. Additionally, her research extends to the growth of semiconductor materials on sapphire substrates, such as Ge and GeSn thin films on c-plane sapphire and GaAs on c-plane sapphire. She also studies the interface-driven growth modes of 2D materials like Gallium Selenide (GaSe) on 3D GaAs substrates with different crystallographic orientations. Her publications also include work on the thermoelectric properties of germanium telluride (GeTe). Sheibani has collaborated with researchers at the University of Arkansas at Fayetteville, including Serhii Kryvyi, Fernando Maia de Oliveira, Calbi Gunder, and Yuriy I. Mazur, with whom she shares multiple publications.
Metrics
- h-index: 2
- Publications: 11
- Citations: 8
Selected Publications
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)
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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2023)
Collaboration Network
Top Collaborators
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
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