Homer Alan Mantooth
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Distinguished Professor of Electrical Engineering
Also affiliated: Analog Devices (United States) (2003); Georgia Institute of Technology (2002–2003); National Institute of Standards and Technology (1997); United States Department of Energy (2022); Analogic (United States) (1993); University of Georgia (2024); Institute of Electrical and Electronics Engineers (2007); Wolfspeed, Inc. (United States) (2014); Arkansas Power Electronics International (2005); Neuromatch (1993); OSGeo (1993); Auburn University (2011); Aalborg University (2022)
Research Areas
Biomedical Subjects
Biography and Research Information
OverviewAI-generated summary
Homer Alan Mantooth is a Distinguished Professor of Electrical Engineering at the University of Arkansas at Fayetteville. His research focuses on power electronics, with a particular emphasis on wide bandgap semiconductor technologies such as silicon carbide (SiC). He has investigated the performance of SiC devices under extreme high-temperature conditions, exploring their implications for miniaturizing power electronic systems. Mantooth has also studied various modulation strategies for resonant converters and developed models for SiC power MOSFETs, including datasheet-driven approaches.
His work has been supported by significant federal funding. Notably, he served as PI on an NSF grant for the Implementation of a National Silicon Carbide Research Fabrication Facility, totaling $17,874,768. He also served as Co-PI on other NSF grants related to communication systems, microwave technologies, and infrastructure trustworthiness in energy systems.
Mantooth leads an active research group and has a prolific publication record, with over 526 publications and a citation count of 9,699, contributing to an h-index of 48. He is recognized as a highly cited researcher and a Fellow of the ARA Academy. His key collaborators at the University of Arkansas at Fayetteville include Md Maksudul Hossain, Kevin Chen, Dereje Woldegiorgis, and Zuhuang Chen.
Metrics
- h-index: 48
- Publications: 546
- Citations: 9,733
Positions
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Distinguished Professor of Electrical Engineering publications 2001–2026University of Arkansas at Fayetteville Listing
Selected Publications
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Design of a Full-Bridge Power Module for a Dual Active Bridge Converter (2026)
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Insights to Spectral Based Acoustic Emissions Detection of Partial Discharge (2026)
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A Cryogenic On-state Voltage Measurement Circuit for Testing Dynamic On-resistance of GaN Transistors in Low Temperature (2026)
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Packaging of High Temperature 50 kW SiC Motor Drive Modules for Hybrid-Electric Vehicles (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Artificial Intelligence for Design Optimization of High Frequency Power Electronics Converters (2025)
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Microgrid Controller Validation via High-Power Alpha Testing Wesley G. Schwartz (2025)
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LAREL: A Reliability-Aware Framework for Power Module Layout Optimization Under Dynamic Drive Cycle Stress (2025)
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A Dynamic Waveform Analysis Methodology in a FPGA Embedded Digital Twin for Secure ANPC Inverter Firmware Validation (2025)
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Parametric Analysis of an AlScN Based Ferroelectric Capacitor Model in a Ferroelectric Memory Bitcell (2025)
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SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region (2025)
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Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity (2025)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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TCAD-Aided Investigation of Temperature-Dependent Behavior in 4H-SiC P-Channel MOSFETs Up to 500°C (2025)
ARA Academy 2015 ARA Fellow
Dr. Mantooth has established an internationally recognized electronics research program at the University of Arkansas. His team's designs have been deployed on the International Space Station, enduring extreme temperatures and radiation exposure. He has founded and supported three Arkansas-based startup companies, translating research into commercial applications. His economic contributions to the state are estimated to exceed $4 billion.
Policy Impact
Founded three Arkansas-based startup companies with estimated $4B+ economic impact. Designs deployed on the International Space Station.
Growth Areas
['Power Electronics, Advanced Packaging & Grid Management Systems']
Federal Grants 4 $18,499,758 total
Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility
Travel: USA-AFRICA WORKSHOP ON COMMUNICATION SYSTEMS AND MICROWAVE TECHNOLOGIES
Conference: USA-Africa Workshop on Communications and Microwave Emerging Technologies
Collaboration Network
Top Collaborators
- Overview of Modulation Strategies for LLC Resonant Converter
- A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers
- A Complete Step-by-Step Optimal Design for LLC Resonant Converter
- A Fault-Tolerant Hybrid Cascaded H-Bridge Multilevel Inverter
- Analysis and Design of the LLC Resonant Converter With Variable Inductor Control Based on Time-Domain Analysis
Showing 5 of 58 shared publications
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Design and Optimization of SiC MOSFET Wire Bondless Power Modules
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions
- A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices
Showing 5 of 24 shared publications
- Power Conversion With SiC Devices at Extremely High Ambient Temperatures
- A Review of Current Research Trends in Power-Electronic Innovations in Cyber–Physical Systems
- Cybersecurity and Power Electronics: Addressing the Security Vulnerabilities of the Internet of Things
- Assessing the Impact of SiC MOSFETs on Converter Interfaces for Distributed Energy Resources
- High-temperature silicon carbide and silicon on insulator based integrated power modules
Showing 5 of 21 shared publications
- A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers
- A Review of Current Research Trends in Power-Electronic Innovations in Cyber–Physical Systems
- An Intelligent Versatile Model-Based Trajectory-Optimized Active Gate Driver for Silicon Carbide Devices
- Busbar Design and Optimization for Voltage Overshoot Mitigation of a Silicon Carbide High-Power Three-Phase T-Type Inverter
- Design and Validation of A 250-kW All-Silicon Carbide High-Density Three-Level T-Type Inverter
Showing 5 of 18 shared publications
- Overview of Modulation Strategies for LLC Resonant Converter
- A Complete Step-by-Step Optimal Design for LLC Resonant Converter
- Analysis and Design of the LLC Resonant Converter With Variable Inductor Control Based on Time-Domain Analysis
- Synchronous Rectification for LLC Resonant Converter: An Overview
- An LLC Converter With Multiple Operation Modes for Wide Voltage Gain Range Application
Showing 5 of 18 shared publications
- Modeling of Wide Bandgap Power Semiconductor Devices—Part I
- Transient Electrothermal Simulation of Power Semiconductor Devices
- Modeling of Wide-Bandgap Power Semiconductor Devices—Part II
- Power SiC DMOSFET Model Accounting for Nonuniform Current Distribution in JFET Region
- A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility
Showing 5 of 12 shared publications
- Modeling of Wide Bandgap Power Semiconductor Devices—Part I
- Transient Electrothermal Simulation of Power Semiconductor Devices
- Modeling of Wide-Bandgap Power Semiconductor Devices—Part II
- Power SiC DMOSFET Model Accounting for Nonuniform Current Distribution in JFET Region
- A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility
Showing 5 of 12 shared publications
- Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
- Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
- Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
- A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
- Silicon carbide power MOSFET model and parameter extraction sequence
Showing 5 of 12 shared publications
- Adaptive Multi-Level Active Gate Drivers for SiC Power Devices
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices
- Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications
Showing 5 of 12 shared publications
- An Overview of Cyber-Physical Security of Battery Management Systems and Adoption of Blockchain Technology
- A SiC CMOS Linear Voltage Regulator for High-Temperature Applications
- Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs
- High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters
- A Test Bed for Detecting False Data Injection Attacks in Systems With Distributed Energy Resources
Showing 5 of 11 shared publications
- Adaptive Multi-Level Active Gate Drivers for SiC Power Devices
- A Review of Cyber–Physical Security for Photovoltaic Systems
- An Overview of Cyber-Resilient Smart Inverters Based on Practical Attack Models
- A Test Bed for Detecting False Data Injection Attacks in Systems With Distributed Energy Resources
- Modular multilevel converter with high-frequency transformers for interfacing hybrid DC and AC microgrid systems
Showing 5 of 11 shared publications
- Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability
- A 10 kV SiC MOSFET Power Module With Optimized System Interface and Electric Field Distribution
- Design and Optimization of SiC MOSFET Wire Bondless Power Modules
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- A Tutorial on High-Density Power Module Packaging
Showing 5 of 11 shared publications
- A SiC CMOS Linear Voltage Regulator for High-Temperature Applications
- Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs
- High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters
- A SiC NMOS Linear Voltage Regulator for High-Temperature Applications
- High-Temperature Voltage and Current References in Silicon Carbide CMOS
Showing 5 of 10 shared publications
- Datasheet Driven Silicon Carbide Power MOSFET Model
- An Integrated SiC CMOS Gate Driver for Power Module Integration
- A SiC CMOS Linear Voltage Regulator for High-Temperature Applications
- Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs
- High-Temperature Voltage and Current References in Silicon Carbide CMOS
Showing 5 of 10 shared publications
- Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems
- A Solution to Press-Pack Packaging of SiC MOSFETS
- 3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices
- A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
- A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
Showing 5 of 10 shared publications
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