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Listed
Presence
Current · Arkansas
Last published
2020
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
S
Seyed Amir Ghetmiri
High Impact
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Also affiliated: Dartmouth College (2018); Wilkes University (2014–2018); University of Alabama (2018); Missouri University of Science and Technology (2013); University of Massachusetts Boston (2014–2018)
23 h-index
89 pubs
2,235 cited
Research Areas
Links
Biography and Research Information
Metrics
- h-index: 23
- Publications: 89
- Citations: 2,235
Selected Publications
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Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System (2020)
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Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration (2019)
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Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration (2019)
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Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si (2019)
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Si-based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K (2019)
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Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications (2019)
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Free Carrier Plasma GeSn Modulator for Mid-Infrared Integrated Microwave Photonics (2019)
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Si-Based GeSn Photodetector for Mid-Infrared Integrated Microwave Photonics (2019)
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Development of GeSn/SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications (2019)
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Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration (2019)
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Development of GeSn Emitters and Detectors towards Integrated Mid-Infrared Photonics Applications (2019)
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Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si (2019)
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Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K (2019)
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Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si (2019)
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Silicon-based GeSn mid-infrared lasers (Conference Presentation) (2019)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
79 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 79 shared publications
Wei Du
Wilkes University
72 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 72 shared publications
Aboozar Mosleh
University of Arkansas at Fayetteville
67 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 67 shared publications
John Tolle
66 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 66 shared publications
Joe Margetis
62 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 62 shared publications
Greg Sun
University of Massachusetts Boston (US)
61 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 61 shared publications
Richard Soref
University of Massachusetts Boston (US)
61 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 61 shared publications
Hameed A. Naseem
University of Arkansas at Fayetteville
55 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
Showing 5 of 55 shared publications
Mansour Mortazavi
University of Arkansas at Pine Bluff
40 shared publications
In database
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
Showing 5 of 40 shared publications
Baohua Li
The Ark
39 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 39 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
38 shared publications
In database
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
Showing 5 of 38 shared publications
Wei Dou
University of Arkansas at Fayetteville (US)
30 shared publications
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
Showing 5 of 30 shared publications
Sattar Al-Kabi
University of Arkansas at Fayetteville
28 shared publications
In database
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
Showing 5 of 28 shared publications
Benjamin R. Conley
University of Arkansas at Fayetteville (US)
26 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
- Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 <i>μ</i>m long-wavelength cutoff
- Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
- Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx
Showing 5 of 26 shared publications
Huong Tran
University of Arkansas at Fayetteville (US)
25 shared publications
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 <i>μ</i>m long-wavelength cutoff
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- (Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics
Showing 5 of 25 shared publications