Mansour Mortazavi
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
ARA Fellow
Also affiliated: Dartmouth College (2018); Shanghai Polytechnic University (2018); Wilkes University (2018–2019); University of Alabama (2018); Donghua University (2018); Chinese Academy of Sciences (2018); University of Massachusetts Boston (2018); Parallel Quantum Solutions (United States) (2024); Institute of Physics (2018); University of Tennessee at Knoxville (2018); Southeast University (2018); Tsinghua University (2018)
Research Areas
Biography and Research Information
OverviewAI-generated summary
Mansour Mortazavi's research focuses on the development and characterization of semiconductor materials, particularly Germanium-Tin (GeSn) alloys, for optoelectronic applications. His work has explored GeSn-based lasers and photodetectors, investigating their performance at various wavelengths and operating temperatures. Publications detail the creation of optically pumped GeSn lasers operating at wavelengths between 2 and 3 micrometers, with some devices achieving lasing at temperatures up to 270 K.
Further research has involved the study of GeSn heterostructures for mid-infrared imaging and the investigation of strain relaxation and composition gradients in alloy growth to reduce defects. Mortazavi has also contributed to the development of high-performance GeSn photodiodes for short-wave infrared imaging and light-emitting diodes for mid-infrared applications. His scholarly output includes 97 publications with 1,886 citations, and an h-index of 19.
Mortazavi is an ARA Fellow and has served as a Co-Principal Investigator on a National Science Foundation grant totaling $199,592 for the SHARP CCI project, which focuses on community cyber infrastructure. His collaborations include researchers from the University of Arkansas at Pine Bluff and the University of Arkansas at Fayetteville.
Metrics
- h-index: 19
- Publications: 97
- Citations: 1,882
Positions
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ARA Fellow publications 2011–2025University of Arkansas at Pine Bluff Institutional directory
Selected Publications
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Study of group III-V waveguides on sapphire platform for photonic integrated circuits (2025)
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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
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Halide perovskite-polymer composite film for bright and stable light-emitting devices (2025)
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Tuning magnetism in Ising-type van der Waals magnet FePS3 by lithium intercalation (2025)
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Large negative magnetoresistance in antiferromagnetic G d 2 S e 3 (2025)
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Medium‐Entropy Engineering of Magnetism in Layered Antiferromagnet CuxNi2(1‐x)CrxP2S6 (2024)
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Förster Resonance Energy Transfer and Enhanced Emission in Cs4PbBr6 Nanocrystals Encapsulated in Silicon Nano-Sheets for Perovskite Light Emitting Diode Applications (2024)
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Engineering magnetism in layered antiferromagnets metal thiophosphates MPX3 for novel photonic processes (2024)
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Halide perovskite and polymer composite film for bright light emitting devices (2024)
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Evolution of magnetism in the magnetic topological semimetal NdS b x T e 2 − x + δ (2024)
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Field-induced spin polarization in the lightly Cr-substituted layered antiferromagnet NiPS3 (2024)
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Progress and Application of Halide Perovskite Materials for Solar Cells and Light Emitting Devices (2024)
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Low-Loss GaAs/AlGaAs-On-Sapphire Waveguides for Sapphire Based Photonic Integrated Circuits (2023)
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Probing anharmonic phonons in WS2 van der Waals crystal by Raman spectroscopy and machine learning (2023)
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Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon (2020)
ARA Academy 2017 ARA Fellow
Dr. Mortazavi investigates specialized materials applicable to night vision devices and optical communication systems. His recent collaborative efforts centered on creating novel mid-infrared lasers with tunable wavelengths, marking a first achievement within the United States alongside partners from the University of Arkansas, University of Boston, and University of Arizona.
Policy Impact
Pioneering mid-infrared laser technology for night vision and optical communication, attracting federal defense research investment to UAPB.
Growth Areas
['Materials Engineering Applications']
Federal Grants 1 $199,592 total
CC* CIRA: Shared Arkansas Research Plan for Community Cyber Infrastructure (SHARP CCI)
Collaboration Network
Top Collaborators
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 57 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 56 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 43 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
Showing 5 of 43 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 43 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
Showing 5 of 42 shared publications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 40 shared publications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 39 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 37 shared publications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
Showing 5 of 36 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 36 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
Showing 5 of 30 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 28 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
Showing 5 of 25 shared publications
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
- Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
- Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications
Showing 5 of 22 shared publications
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