P
Pengyu Lai Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
9 h-index
34 pubs
247 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Pengyu Lai's research focuses on the development and analysis of semiconductor devices, particularly silicon carbide (SiC) MOSFETs and SCR devices, for high-temperature and harsh environments. His work investigates methods for monitoring junction temperature, designing integrated gate drivers for power modules, and creating optocouplers for optical galvanic isolation in high-density power applications. Lai has also explored the use of Low Temperature Co-fired Ceramic (LTCC) packaging for current sensors and gate drivers, demonstrating their utility in high-temperature SiC power modules operating up to 250°C. His research includes the development of area-efficient SiC SCR devices for on-chip electrostatic discharge (ESD) protection. Lai collaborates with researchers Zhong Chen, Hui Wang, Salahaldein Ahmed, and Sudharsan Chinnaiyan at the University of Arkansas at Fayetteville, with whom he has co-authored numerous publications.
Metrics
- h-index: 9
- Publications: 34
- Citations: 247
Selected Publications
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A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2026)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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TCAD-Aided Investigation of Temperature-Dependent Behavior in 4H-SiC P-Channel MOSFETs Up to 500°C (2025)
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<i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC (2025)
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Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025)
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Design and Validation of a 100 kHz Inner-Paralleled Si+SiC Hybrid Multilevel Converter for Medium-Voltage Electric Traction Drives (2025)
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A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
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Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses (2024)
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A review of silicon carbide CMOS technology for harsh environments (2024)
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Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver (2024)
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Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules (2023)
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A Medium-Voltage Multilevel Hybrid Converter Using 3.3kV Silicon Carbide MOSFETs and Silicon IGBT Modules (2023)
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High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver (2023)
Collaboration Network
Top Collaborators
Zhong Chen
University of Arkansas at Fayetteville
15 shared publications
In database
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- A review of silicon carbide CMOS technology for harsh environments
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
Showing 5 of 15 shared publications
H. Alan Mantooth
University of Arkansas at Fayetteville
10 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Showing 5 of 10 shared publications
Hui Wang
University of Arkansas at Fayetteville
8 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
- Area-efficient dual-diode with optimized parasitic bipolar structure for rail-based ESD protections
- Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses
Showing 5 of 8 shared publications
Salahaldein Ahmed
University of Arkansas at Fayetteville
7 shared publications
In database
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Showing 5 of 7 shared publications
Sudharsan Chinnaiyan
University of Arkansas at Fayetteville
6 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 6 shared publications
Alan Mantooth
University of Arkansas at Fayetteville (US)
4 shared publications
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
Shui-Qing Yu
University of Arkansas at Fayetteville
4 shared publications
In database
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Zhong Chen
University of Arkansas at Fayetteville (US)
4 shared publications
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Design and Validation of a 100 kHz Inner-Paralleled Si+SiC Hybrid Multilevel Converter for Medium-Voltage Electric Traction Drives
- Current Injection Effect on ESD Behaviors of the Parasitic Bipolar Transistors inside P+/N-well diode
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Peng Sun
State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
3 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- A Medium-Voltage Multilevel Hybrid Converter Using 3.3kV Silicon Carbide MOSFETs and Silicon IGBT Modules
David González
University of Arkansas at Fayetteville (US)
3 shared publications
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
Zhuowen Feng
3 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
Xiang Cui
North China Electric Power University (CN)
2 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
Zhibin Zhao
North China Electric Power University (CN)
2 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
Syam Madhusoodhanan
University of Arkansas at Fayetteville (US)
2 shared publications
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
Abbas Sabbar
University of Arkansas at Fayetteville
2 shared publications
In database
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
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