Emmanuel Wanglia Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
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Biography and Research Information
OverviewAI-generated summary
Emmanuel Wanglia's research focuses on the growth of pseudomorphic Germanium-Tin (GeSn) alloys at low pressure, with a specific emphasis on achieving high tin incorporation. His work has explored compositions of 16.7% tin, investigating the conditions necessary for the successful deposition of these materials. Wanglia has co-authored two publications detailing these efforts, contributing to the understanding of semiconductor material growth techniques. His academic work is supported by collaborations with fellow researchers at the University of Arkansas at Fayetteville, including Oluwatobi Olorunsola, Solomon Ojo, Murtadha Alher, and Abbas Sabbar, who have shared authorship on his published works. Wanglia's research profile is marked by a recent publication in 2022, indicating continued activity in his field. His scholarly contributions are currently reflected in an h-index of 1 with a total of two publications and sixteen citations.
Metrics
- h-index: 1
- Publications: 2
- Citations: 18
Selected Publications
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
Collaboration Network
Top Collaborators
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
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