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Likely match
Presence
Current · Arkansas
Last published
2025
Sources
OpenAlex · ORCID
Refreshed
2026-10-09
Z
Zuhuang Chen
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
High Impact
Professor
43 h-index
167 pubs
6,447 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Zuhuang Chen's research interests encompass materials science, with a focus on nanomaterials and their applications in environmental remediation, energy storage, and catalysis. He has published extensively on one-dimensional titanium dioxide (TiO2) nanostructures for applications such as solar water splitting and environmental catalysis. His work also includes the development of novel materials for high-performance lithium-ion batteries, investigating hybrid structures involving cobalt sulfides, porous carbon polyhedra, and carbon nanotubes.
Further areas of his research include phytoremediation as a method for revegetating land polluted with heavy metals, and the fundamental principles of hydrogen evolution electrocatalysis. Chen has also explored the modification of plant biochemistry, specifically investigating methods to increase vitamin C content in plants through enhanced ascorbate recycling.
With an h-index of 43 and over 167 publications attracting more than 6,400 citations, Chen is recognized as a highly cited researcher. He has served as a Co-Principal Investigator on a significant National Science Foundation (NSF) grant totaling $17,874,768 for the implementation of a National Silicon Carbide Research Fabrication Facility. His collaborative network includes several researchers from the University of Arkansas at Fayetteville, with whom he has co-authored numerous publications.
Metrics
- h-index: 43
- Publications: 167
- Citations: 6,447
Positions
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Professor 2018–presentHarbin Institute of Technology, Shenzhen Materials Science & Engineering ORCID
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ProfessorUniversity of Arkansas at Fayetteville ORCID
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Postdoc 2014–2018University of California Berkeley Materials Science & Engineering ORCID
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Postdoc 2013–2014University of Illinois at Urbana-Champaign ORCID
Selected Publications
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Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity (2025)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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TCAD-Aided Investigation of Temperature-Dependent Behavior in 4H-SiC P-Channel MOSFETs Up to 500°C (2025)
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Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025)
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Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers (2025)
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Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025)
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Design and Validation of a 100 kHz Inner-Paralleled Si+SiC Hybrid Multilevel Converter for Medium-Voltage Electric Traction Drives (2025)
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A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
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Large enhancement of ferroelectric properties of perovskite oxides via nitrogen incorporation (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
Federal Grants 1 $17,874,768 total
NSF
Co-PI
Oct 2021 - Sep 2027
Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility
Collaboration Network
Top Collaborators
Pengyu Lai
University of Arkansas at Fayetteville
17 shared publications
In database
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- A review of silicon carbide CMOS technology for harsh environments
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
Showing 5 of 17 shared publications
H. Alan Mantooth
University of Arkansas at Fayetteville
15 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A Tutorial on High-Density Power Module Packaging
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
Showing 5 of 15 shared publications
Salahaldein Ahmed
University of Arkansas at Fayetteville
10 shared publications
In database
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- A Comparison between Conventional Buck and 2-pscB DC-DC Converters
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Eliminating deadtime mismatch due to inserting storage capacitor of a GaN-based two-phase series-capacitor buck DC-DC converter
Showing 5 of 10 shared publications
Peng Sun
North China Electric Power University (CN)
8 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
Showing 5 of 8 shared publications
Zhibin Zhao
North China Electric Power University (CN)
8 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
Showing 5 of 8 shared publications
Sudharsan Chinnaiyan
University of Arkansas System
8 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 8 shared publications
Hui Wang
University of Arkansas at Fayetteville
7 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
- Area-efficient dual-diode with optimized parasitic bipolar structure for rail-based ESD protections
Showing 5 of 7 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
5 shared publications
In database
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Yumeng Cai
North China Electric Power University (CN)
5 shared publications
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
- Influence of the Interface Traps Distribution on I-V and C-V Characteristics of SiC MOSFET Evaluated by TCAD Simulations
- Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
Xuebao Li
North China Electric Power University (CN)
5 shared publications
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
- Comparisons of Two Turn-off Failures Under Clamped Inductive Load in Planar FS 3.3 kV/50 A IGBT Chip
- Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
Alan Mantooth
University of Arkansas at Fayetteville
5 shared publications
In database
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Yuxiang Chen
University of Arkansas at Fayetteville
5 shared publications
In database
- A Tutorial on High-Density Power Module Packaging
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
Zhuowen Feng
University of Arkansas System
4 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
Xiang Cui
North China Electric Power University (CN)
3 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Comparisons of Two Turn-off Failures Under Clamped Inductive Load in Planar FS 3.3 kV/50 A IGBT Chip
Lei Qi
North China Electric Power University (CN)
3 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
- Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
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