Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
S
Sudharsan Chinnaiyan
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Graduate Research Assistant
6 h-index
16 pubs
123 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Sudharsan Chinnaiyan's research focuses on the development and characterization of advanced power semiconductor modules, particularly those utilizing silicon carbide (SiC) technology. His work addresses challenges in high-voltage applications, including electromagnetic interference (EMI) mitigation and enhanced thermal management through integrated cooling solutions like LTCC jet impingement. Chinnaiyan has investigated substrate-less packaging designs aimed at improving recyclability and has explored the integration of high-temperature optocouplers and gate drivers for demanding operational environments. His publications also include reviews on ultrafast switching power modules, highlighting current trends and technical solutions in the field.
Chinnaiyan collaborates with researchers at the University of Arkansas at Fayetteville, including Kevin Chen, Zuhuang Chen, H. Alan Mantooth, and Pengyu Lai. His scholarly contributions are reflected in an h-index of 6, with 16 total publications and 123 citations.
Metrics
- h-index: 6
- Publications: 16
- Citations: 123
Positions
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Graduate Research Assistant 2020–presentUniversity of Arkansas at Fayetteville Electrical Engineering and Computer Science ORCID
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Hardware Design Engineer Intern 2024Wolfspeed Medium and High Voltage Power Products Group ORCID
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Electrical Engineer 2019Fauxsee Innovations LLC ORCID
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Graduate Assistant 2017–2018University of Arkansas at Fayetteville Electrical Engineering ORCID
Selected Publications
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An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules (2026)
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Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions (2026)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025)
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A 200 ∘C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
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Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Multi-tier Cooling Solution for 10 kV SiC MOSFET Power Module Featuring Stacked Substrates (2024)
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Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver (2024)
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Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules (2023)
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3.3 kV Low-Inductance Full SiC Power Module (2023)
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High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver (2023)
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Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules (2022)
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Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler (2022)
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EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module (2022)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
11 shared publications
In database
- Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Showing 5 of 11 shared publications
Yuxiang Chen
University of Arkansas at Fayetteville
9 shared publications
In database
- Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Showing 5 of 9 shared publications
Pengyu Lai
University of Arkansas at Fayetteville
8 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 8 shared publications
Xiaoling Li
University of Arkansas at Fayetteville
6 shared publications
In database
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 6 shared publications
Salahaldein Ahmed
University of Arkansas at Fayetteville
6 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 6 shared publications
Zhong Chen
University of Arkansas at Fayetteville
6 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Showing 5 of 6 shared publications
Alan Mantooth
University of Arkansas at Fayetteville
3 shared publications
In database
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
Hao Chen
University of Arkansas at Fayetteville (US)
3 shared publications
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Zhuowen Feng
University of Arkansas at Fayetteville
3 shared publications
In database
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules
Mohammad Dehan Rahman
University of Arkansas at Fayetteville
3 shared publications
In database
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
Yue Zhao
University of Arkansas at Fayetteville
2 shared publications
In database
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- 3.3 kV Low-Inductance Full SiC Power Module
Shui-Qing Yu
University of Arkansas at Fayetteville
2 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Riya Paul
University of Arkansas at Fayetteville (US)
2 shared publications
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Qiang Wu
University of Arkansas at Fayetteville
2 shared publications
In database
- Multi-tier Cooling Solution for 10 kV SiC MOSFET Power Module Featuring Stacked Substrates
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
John Fraley
University of Arkansas at Fayetteville
2 shared publications
In database
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
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