S
Sudharsan Chinnaiyan Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Graduate Research Assistant
grad_student
5 h-index
14 pubs
100 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Sudharsan Chinnaiyan's research focuses on the development and characterization of power semiconductor modules, particularly those utilizing silicon carbide (SiC) technology. His work has explored methods to enhance the performance, thermal management, and recyclability of these modules. Recent publications detail the design of wire bondless SiC power modules integrated with advanced cooling systems, such as LTCC-based jet impingement coolers. Chinnaiyan has also investigated high-temperature optocouplers and isolated gate drivers for integration into high-density power modules, with studies examining their electrical and thermal properties at temperatures up to 250°C. His research extends to optically isolated half-bridge modules designed for high-temperature operation. Chinnaiyan collaborates with researchers at the University of Arkansas at Fayetteville, including Zhong Chen, Pengyu Lai, Salahaldein Ahmed, and H. Alan Mantooth, with whom he has co-authored multiple publications.
Metrics
- h-index: 5
- Publications: 14
- Citations: 100
Selected Publications
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025)
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A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
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Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Multi-tier Cooling Solution for 10 kV SiC MOSFET Power Module Featuring Stacked Substrates (2024)
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Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver (2024)
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Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules (2023)
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3.3 kV Low-Inductance Full SiC Power Module (2023)
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High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver (2023)
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Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules (2022)
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Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler (2022)
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EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module (2022)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
9 shared publications
In database
- Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Showing 5 of 9 shared publications
Yuxiang Chen
University of Arkansas at Fayetteville
8 shared publications
In database
- Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Showing 5 of 8 shared publications
Xiaoling Li
University of Arkansas at Fayetteville (US)
6 shared publications
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 6 shared publications
Pengyu Lai
University of Arkansas at Fayetteville
6 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 6 shared publications
Salahaldein Ahmed
University of Arkansas at Fayetteville
6 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 6 shared publications
Zhong Chen
University of Arkansas at Fayetteville
6 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Showing 5 of 6 shared publications
Alan Mantooth
University of Arkansas at Fayetteville (US)
3 shared publications
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
Hao Chen
University of Arkansas at Fayetteville (US)
3 shared publications
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Yue Zhao
University of Arkansas at Fayetteville
2 shared publications
In database
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- 3.3 kV Low-Inductance Full SiC Power Module
Shui-Qing Yu
University of Arkansas at Fayetteville
2 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Riya Paul
University of Arkansas at Fayetteville (US)
2 shared publications
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Qiang Wu
University of Arkansas at Fayetteville
2 shared publications
In database
- Multi-tier Cooling Solution for 10 kV SiC MOSFET Power Module Featuring Stacked Substrates
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
Zhuowen Feng
University of Arkansas System
2 shared publications
In database
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
Mohammad Dehan Rahman
University of Arkansas at Fayetteville
2 shared publications
In database
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
Hao Chen
University of Arkansas at Fayetteville (US)
1 shared publication
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
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