Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
M
Mohammad Dehan Rahman
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
Also affiliated: University of Arkansas System (2025); European University of Bangladesh (2022); Islamic University of Technology (2018–2022)
Faculty Researcher
6 h-index
31 pubs
96 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Mohammad Dehan Rahman's research focuses on power electronics, specifically the design and analysis of DC-DC converters and solid-state circuit breakers. His work investigates components for power modules, including research into the impact of low thermal conductivity on gallium oxide power module packaging and the design of low parasitic inductance GaN HEMT flip-chip power modules. Rahman also explores phase change material-based silicon carbide power module packaging and the development of compact models for β-Ga2O3 Schottky barrier diodes. His collaborative efforts include 14 shared publications with Xiaoqing Song and 8 with Abu Shahir Md Khalid Hasan, both at the University of Arkansas at Fayetteville. Rahman has published 31 papers with a total of 89 citations and an h-index of 6.
Metrics
- h-index: 6
- Publications: 31
- Citations: 96
Selected Publications
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Development of Low Inductance Direct Bonded Flipchip Gallium Nitride Module (2026)
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DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET (2026)
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Thermal Design and Analysis of Phase Change Material Integrated SiC Based Solid State Circuit Breaker (2026)
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Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions (2026)
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SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region (2025)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout (2025)
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DC Partial Discharge Characterization of a Coreless PCB Transformer (2025)
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Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module (2025)
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Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025)
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Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET (2025)
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Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode (2025)
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Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module (2025)
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Serial Peripheral Interface Based Primary Layer Control of a Solid State Transformer (2024)
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A SiC MOSFET Based Multi-Port Solid State Circuit Breaker for DC Protection (2024)
Collaboration Network
Top Collaborators
Xiaoqing Song
University of Arkansas at Fayetteville
15 shared publications
In database
- A Multi-Port Solid State Circuit Breaker for LVDC Protection: Towards A Lossless Design
- Investigation of the Impact of Low Thermal Conductivity on Gallium Oxide Power Module Packaging
- A SiC MOSFET Based Multi-Port Solid State Circuit Breaker for DC Protection
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- A Review of Power Electronics Converters in Hydrogen Fuel Cell Application
Showing 5 of 15 shared publications
H. Alan Mantooth
University of Arkansas at Fayetteville
13 shared publications
In database
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor
- Thermal and Bonding Strength Evaluation of Die Attach Materials for Power Module Packaging
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
Showing 5 of 13 shared publications
Abu Shahir Md Khalid Hasan
University of Arkansas at Fayetteville
9 shared publications
In database
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Showing 5 of 9 shared publications
Tanzila Akter
University of Arkansas at Fayetteville
4 shared publications
In database
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Yannal Nawafleh
University of Arkansas at Fayetteville
4 shared publications
In database
- A Multi-Port Solid State Circuit Breaker for LVDC Protection: Towards A Lossless Design
- A SiC MOSFET Based Multi-Port Solid State Circuit Breaker for DC Protection
- Serial Peripheral Interface Based Primary Layer Control of a Solid State Transformer
- Thermal Design and Analysis of Phase Change Material Integrated SiC Based Solid State Circuit Breaker
Yuxiang Chen
University of Arkansas at Fayetteville
3 shared publications
In database
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Md. Moinul Islam
University of Arkansas at Fayetteville
3 shared publications
In database
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
- DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET
Md Maksudul Hossain
University of Arkansas at Fayetteville
3 shared publications
In database
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
Sudharsan Chinnaiyan
University of Arkansas at Fayetteville
3 shared publications
In database
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
Yuxiang Chen
University of Arkansas at Fayetteville
3 shared publications
In database
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
John Fraley
University of Arkansas at Fayetteville
2 shared publications
In database
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
Brian Rowden
Oak Ridge National Laboratory (US)
2 shared publications
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
Yash Veer Singh
Eaton (United States) (US)
2 shared publications
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
Chanyeop Park
Arizona State University (US)
2 shared publications
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
Xiaoqing Song
University of Arkansas System
2 shared publications
In database
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
Similar Researchers
Based on overlapping research topics
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