Mohammad Dehan Rahman Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Mohammad Dehan Rahman's research focuses on power electronics, particularly the design and analysis of DC-DC converters and solid-state circuit breakers. His work includes developing multi-port solid-state circuit breakers for low-voltage DC protection, with a focus on lossless designs. He has investigated the impact of material properties, such as low thermal conductivity in Gallium Oxide power modules, and explored packaging solutions utilizing phase change materials for Silicon Carbide power modules. Rahman also reviews power electronics converters for applications in hydrogen fuel cells and has studied compact models for Gallium Oxide Schottky barrier diodes. He has collaborated with several researchers at the University of Arkansas at Fayetteville, including Abu Shahir Md Khalid Hasan, Tanzila Akter, and Md Maksudul Hossain, on multiple shared publications. His scholarship metrics include an h-index of 5, with 27 total publications and 74 total citations.
Metrics
- h-index: 6
- Publications: 30
- Citations: 79
Selected Publications
-
SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region (2025)
-
A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
-
Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout (2025)
-
DC Partial Discharge Characterization of a Coreless PCB Transformer (2025)
-
Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module (2025)
-
Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025)
-
Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET (2025)
-
Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode (2025)
-
Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module (2025)
-
Serial Peripheral Interface Based Primary Layer Control of a Solid State Transformer (2024)
-
A SiC MOSFET Based Multi-Port Solid State Circuit Breaker for DC Protection (2024)
-
A Multi-Port Solid State Circuit Breaker for LVDC Protection: Towards A Lossless Design (2024)
-
Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices (2024)
-
High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor (2024)
-
Thermal and Bonding Strength Evaluation of Die Attach Materials for Power Module Packaging (2024)
Collaboration Network
Top Collaborators
- Investigation of the Impact of Low Thermal Conductivity on Gallium Oxide Power Module Packaging
- A Multi-Port Solid State Circuit Breaker for LVDC Protection: Towards A Lossless Design
- A Review of Power Electronics Converters in Hydrogen Fuel Cell Application
- A Phase Change Material Based Silicon Carbide Power Module Packaging
- A SiC MOSFET Based Multi-Port Solid State Circuit Breaker for DC Protection
Showing 5 of 14 shared publications
- High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Thermal and Bonding Strength Evaluation of Die Attach Materials for Power Module Packaging
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
Showing 5 of 8 shared publications
- High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Showing 5 of 7 shared publications
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- A Multi-Port Solid State Circuit Breaker for LVDC Protection: Towards A Lossless Design
- A SiC MOSFET Based Multi-Port Solid State Circuit Breaker for DC Protection
- Serial Peripheral Interface Based Primary Layer Control of a Solid State Transformer
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
- Development of DC-DC Converters – A Review
- Design and Analysis of Passive LC3 Star Component Buck Converter
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
Similar Researchers
Based on overlapping research topics