Nirosh M. Eldose Data-verified

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Post doctoral research

University of Arkansas
Last publication 2026 Last refreshed 2026-05-16

postdoc

7 h-index 21 pubs 97 cited

Research Areas

Links

ORCID Lab Website

OverviewAI-generated summary

Nirosh M. Eldose's research focuses on the growth and characterization of semiconductor materials, particularly germanium (Ge) and related alloys, using molecular beam epitaxy (MBE). His work investigates the structural and electronic properties of these materials for potential applications in electronic and optoelectronic devices. Recent publications detail the MBE growth of GeSn/Ge multiple quantum well structures and strained GeSn/Ge heterostructures with varying compositions. Eldose also studies the thermal stability and performance of III-nitride based magnetic field sensors, examining the effects of temperature and strain on their functionality. He has published 21 papers, with an h-index of 2 and 30 citations. Eldose collaborates with several researchers at the University of Arkansas at Fayetteville, including Oluwatobi Olorunsola, Fernando Maia de Oliveira, Hryhorii Stanchu, and Yuriy I. Mazur.

Metrics

  • h-index: 7
  • Publications: 21
  • Citations: 97

Selected Publications

  • Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
    DOI OpenAlex
  • STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
    DOI OpenAlex
  • Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
    DOI OpenAlex
  • Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
    DOI OpenAlex
  • Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
    DOI OpenAlex
  • GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
    DOI OpenAlex
  • Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
    2 citations DOI OpenAlex
  • Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
    DOI OpenAlex
  • Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
    DOI OpenAlex
  • Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024)
    DOI OpenAlex
  • Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
    2 citations DOI OpenAlex
  • Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures (2023)
    7 citations DOI OpenAlex
  • Thermal stability study of gallium nitride based magnetic field sensor (2023)
    6 citations DOI OpenAlex
  • Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)
    7 citations DOI OpenAlex
  • Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023)
    DOI OpenAlex

View all publications on OpenAlex →

Collaborators

Researchers in the database who share publications

Oluwatobi Olorunsola University of Arkansas at Fayetteville 14 shared publications Fernando Maia de Oliveira University of Arkansas at Fayetteville 10 shared publications Hryhorii Stanchu University of Arkansas at Fayetteville 10 shared publications Yuriy I. Mazur University of Arkansas at Fayetteville 9 shared publications Gregory J. Salamo University of Arkansas at Fayetteville 8 shared publications Dinesh Baral University of Arkansas at Fayetteville 8 shared publications Diandian Zhang University of Arkansas at Fayetteville 8 shared publications Mohammad Zamani‐Alavijeh University of Arkansas at Fayetteville 7 shared publications

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