Parsian K. Mohseni
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Also affiliated: Harvard University (2017); Rochester Institute of Technology (2015–2026); University of Illinois Urbana-Champaign (2012–2022); Fanuc (Japan) (2022); Université Joseph Fourier (2017); Universidade Federal de São Carlos (2010); Universidade de São Paulo (2010); Urbana University (2012–2014); Commissariat à l'Énergie Atomique et aux Énergies Alternatives (2017); University of Illinois System (2012); CEA Grenoble (2017); University of Illinois Chicago (2012); Suzhou Institute of Nano-tech and Nano-bionics (2022); Institute of Micro and Nanotechnology (2014); Institut Nanosciences et Cryogénie (2017); Microsystems (United Kingdom) (2018–2021); The University of Texas at Austin (2022); Université Grenoble Alpes (2017); McMaster University (2007–2010)
Formerly Arkansas Affiliated with University of Arkansas through 2024; recent publications list Rochester Institute of Technology.
Research Areas
Biomedical Subjects
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Biography and Research Information
OverviewAI-generated summary
Parsian K. Mohseni's research focuses on the development and characterization of novel semiconductor materials and nanostructures for optoelectronic applications. His work involves the fabrication of heterojunctions and nanostructures using techniques such as metal-assisted chemical etching, selective area heteroepitaxy, and van der Waals epitaxy. These investigations often explore the integration of diverse material systems, including III–V compounds, wide-bandgap semiconductors, and two-dimensional materials like molybdenum disulfide.
Recent publications detail the creation of substrate-free optoelectronic devices, the influences of native oxides on heterojunction properties, and the development of nanostructured arrays for light-emitting applications. Mohseni has also studied the performance of optical pumping lasers and the band alignment of heterojunctions using X-ray photoelectron spectroscopy. His research network includes collaborators such as Sudip Acharya, Shui-Qing Yu, Justin Rudie, and Hryhorii Stanchu, all at the University of Arkansas at Fayetteville, with whom he has co-authored multiple publications.
With an h-index of 23 and over 2,200 citations across 89 publications, Mohseni's contributions are recognized within the field of materials science and semiconductor research. His scholarly activity indicates ongoing engagement and recent contributions, with his most recent publication in 2026.
Metrics
- h-index: 23
- Publications: 89
- Citations: 2,237
Selected Publications
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Supplementary document for Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy - 7811645.pdf (2026)
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Supplementary document for Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy - 7811645.pdf (2026)
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Supplementary document for Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy - 7811645.pdf (2026)
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Supplementary document for Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy - 7811645.pdf (2026)
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Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy (2026)
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Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy (2026)
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Characterization of optothermal transition dynamics in Ge <sub>2</sub> Sb <sub>2</sub> Te <sub>5</sub> and Sb <sub>2</sub> Te <sub>3</sub> via spatial light modulation microscopy (2026)
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One-Step Fabrication of Si Coupons for Micro-Transfer Printing by MacEtch (2026)
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Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting (2026)
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Demonstration of AlGaAs/GeSn p-i-n diodes (2025)
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Electrolyte-gated junctionless III-V Nanowire transistors: a TCAD-based evaluation (2025)
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Curricula, Courses, Labs and Software for Maximum Semiconductor Manufacturing Experience (2025)
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Mixed-Dimensional Heterostructures Fabricated through Micro-Transfer Printing of InP Thin Films on Monolayer Graphene and MoS2: A Parameter Space Evaluation (2025)
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Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025)
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Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024)
Collaboration Network
Top Collaborators
- In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation
- Monolithic III‐V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy
- Inverse Metal-Assisted Chemical Etching Produces Smooth High Aspect Ratio InP Nanostructures
- III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications
- Wafer-Scale Production of Uniform InAs<sub><i>y</i></sub>P<sub>1–<i>y</i></sub> Nanowire Array on Silicon for Heterogeneous Integration
Showing 5 of 40 shared publications
- Ordered Si Micropillar Arrays via Carbon-Nanotube-Assisted Chemical Etching for Applications Requiring Nonreflective Embedded Contacts
- Communication—Black GaAs with Sub-Wavelength Nanostructures Fabricated via Lithography-Free Metal-Assisted Chemical Etching
- Localized Self-Assembly of InAs Nanowire Arrays on Reusable Si Substrates for Substrate-Free Optoelectronics
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures <i>via</i> selective-area van der Waals epitaxy
Showing 5 of 17 shared publications
- Lattice-mismatched semiconductor heterostructures
- Ordered Si Micropillar Arrays via Carbon-Nanotube-Assisted Chemical Etching for Applications Requiring Nonreflective Embedded Contacts
- Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In<sub>0.49</sub>Ga<sub>0.51</sub>P/GaAs Heteroepitaxial Films
- Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene <i>via</i> MOCVD parameter space mapping
- Ordered Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching
Showing 5 of 16 shared publications
- Lattice-mismatched semiconductor heterostructures
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- GaAs/GeSn/Ge <i>n–i–p</i> diodes and light emitting diodes formed via grafting
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction
Showing 5 of 11 shared publications
- III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications
- Site-Controlled VLS Growth of Planar Nanowires: Yield and Mechanism
- Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires
- Lattice-mismatched semiconductor heterostructures
- InAs Planar Nanowire Gate-All-Around MOSFETs on GaAs Substrates by Selective Lateral Epitaxy
Showing 5 of 10 shared publications
- Lattice-mismatched semiconductor heterostructures
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- GaAs/GeSn/Ge <i>n–i–p</i> diodes and light emitting diodes formed via grafting
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction
Showing 5 of 10 shared publications
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- GaAs/GeSn/Ge <i>n–i–p</i> diodes and light emitting diodes formed via grafting
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
- Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy
Showing 5 of 9 shared publications
- III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications
- High-Speed Planar GaAs Nanowire Arrays with <i>f</i><sub>max</sub> > 75 GHz by Wafer-Scale Bottom-up Growth
- Site-Controlled VLS Growth of Planar Nanowires: Yield and Mechanism
- InAs Planar Nanowire Gate-All-Around MOSFETs on GaAs Substrates by Selective Lateral Epitaxy
- Perturbation of Au-assisted planar GaAs nanowire growth by p-type dopant impurities
Showing 5 of 8 shared publications
- Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires
- Characterization of optothermal transition dynamics in Ge <sub>2</sub> Sb <sub>2</sub> Te <sub>5</sub> and Sb <sub>2</sub> Te <sub>3</sub> via spatial light modulation microscopy
- Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy
- Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy
- Supplementary document for Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy - 7811645.pdf
Showing 5 of 8 shared publications
- Ordered Si Micropillar Arrays via Carbon-Nanotube-Assisted Chemical Etching for Applications Requiring Nonreflective Embedded Contacts
- Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In<sub>0.49</sub>Ga<sub>0.51</sub>P/GaAs Heteroepitaxial Films
- Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene <i>via</i> MOCVD parameter space mapping
- Ordered Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching
- Communication—Black GaAs with Sub-Wavelength Nanostructures Fabricated via Lithography-Free Metal-Assisted Chemical Etching
Showing 5 of 8 shared publications
- Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene <i>via</i> MOCVD parameter space mapping
- Localized Self-Assembly of InAs Nanowire Arrays on Reusable Si Substrates for Substrate-Free Optoelectronics
- Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures <i>via</i> selective-area van der Waals epitaxy
- Design and Simulation of the Bifacial III-V-Nanowire-on-Si Solar Cell
- Self-Assembled InAsP and lnAlAs Nanowires on Graphene Via Pseudo-Van Der Waals Epitaxy
Showing 5 of 8 shared publications
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- GaAs/GeSn/Ge <i>n–i–p</i> diodes and light emitting diodes formed via grafting
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Showing 5 of 8 shared publications
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
- Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Showing 5 of 8 shared publications
- GaP/GaAsP/GaP core–multishell nanowire heterostructures on (111) silicon
- Structural and optical analysis of GaAsP/GaP core-shell nanowires
- A growth interruption technique for stacking fault-free nanowire superlattices
- Randomly oriented ZnO nanowires grown on amorphous SiO2 by metal-catalyzed vapour deposition
- Hybrid GaAs-Nanowire–Carbon-Nanotube Flexible Photovoltaics
Showing 5 of 7 shared publications
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
- Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Showing 5 of 7 shared publications
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