Match tier
Listed
Presence
Current · Arkansas
Last published
2019
Sources
OpenAlex · ORCID
Refreshed
2026-10-03
T
Research Areas
Biography and Research Information
Metrics
- h-index: 10
- Publications: 31
- Citations: 1,155
Selected Publications
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Study of High Performance GeSn Photodetectors with Cutoff Wavelength up to 3.7 µm for Low-Cost Infrared Imaging (2019)
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Study of GeSn Mid-infrared Photodetectors for High Frequency Applications (2019)
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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications (2019)
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Development of SiGeSn Technique Towards Integrated Mid-Infrared Photonics Applications (2018)
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High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging (2018)
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Systematic Study of Ge0.89Sn0.11 Photodiodes for Low-Cost Shortwave Infrared Imaging (2018)
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GeSn-based light sources and photoconductors towards integrated photonics for the mid-infrared (2017)
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Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K (2017)
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Investigation of Si-based Ge0.89Sn0.11 Photoconductors with 3.0 μm photoresponse (2017)
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Optically pumped Si-based edge-emitting GeSn laser (2017)
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Silicon-based Ge0.89Sn0.11 photodetector and light emitter towards mid-infrared applications (2017)
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(Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics (2016)
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Systematic study of Si-based Ge/Ge0.9Sn0.1/Ge photodiodes with 2.6 μm detector cutoff (2016)
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An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K (2016)
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(Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics (2016)
Collaboration Network
Top Collaborators
Wei Du
Wilkes University
25 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 25 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
25 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 25 shared publications
Greg Sun
University of Massachusetts Boston (US)
24 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 24 shared publications
Richard Soref
University of Massachusetts Boston (US)
24 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 24 shared publications
Joe Margetis
ASM International (US)
23 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 23 shared publications
John Tolle
ASM International (US)
23 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 23 shared publications
Seyed Amir Ghetmiri
University of Arkansas at Fayetteville
17 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System
- (Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics
Showing 5 of 17 shared publications
Mansour Mortazavi
University of Arkansas at Pine Bluff
17 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
Showing 5 of 17 shared publications
Huong Tran
University of Arkansas at Fayetteville (US)
16 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- Study of GeSn Mid-infrared Photodetectors for High Frequency Applications
- (Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics
Showing 5 of 16 shared publications
Aboozar Mosleh
University of Arkansas at Fayetteville
16 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Study of GeSn Mid-infrared Photodetectors for High Frequency Applications
- Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System
Showing 5 of 16 shared publications
Hameed A. Naseem
University of Arkansas at Fayetteville
16 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System
- (Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics
Showing 5 of 16 shared publications
Baohua Li
15 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Study of GeSn Mid-infrared Photodetectors for High Frequency Applications
Showing 5 of 15 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
14 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Study of High Performance GeSn Photodetectors with Cutoff Wavelength up to 3.7 µm for Low-Cost Infrared Imaging
Showing 5 of 14 shared publications
Sattar Al-Kabi
University of Arkansas at Fayetteville
11 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- (Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics
Showing 5 of 11 shared publications
Perry C. Grant
University of Arkansas at Fayetteville
10 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- Study of High Performance GeSn Photodetectors with Cutoff Wavelength up to 3.7 µm for Low-Cost Infrared Imaging
- Systematic Study of Ge0.89Sn0.11 Photodiodes for Low-Cost Shortwave Infrared Imaging
Showing 5 of 10 shared publications