Match tier
Likely match
Presence
Current · Arkansas
Last published
2025
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
M
Md Maksudul Hossain
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Also affiliated: DuPont (United States) (2022–2023); Intel (United States) (2022–2024); Clemson University (2018–2019)
Faculty Researcher
15 h-index
58 pubs
677 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Md Maksudul Hossain's research focuses on the characterization, modeling, and performance evaluation of semiconductor devices, particularly silicon carbide (SiC) and gallium nitride (GaN) power modules, under various operating conditions. His work investigates the behavior of these devices, including power MOSFETs and HEMTs, at cryogenic temperatures, examining aspects such as third-quadrant operation, gate driver functionality, and power converter performance in low-temperature environments. Hossain has published research comparing silicon and wide bandgap devices at cryogenic temperatures and analyzing the computational efficiency of SiC MOSFET models in SPICE simulations. His collaborations include multiple shared publications with researchers Alan Mantooth, H. Alan Mantooth, Abu Shahir Md Khalid Hasan, and Rosten Sweeting at the University of Arkansas at Fayetteville. Hossain's scholarly output includes 58 publications with 635 citations and an h-index of 15.
Metrics
- h-index: 15
- Publications: 58
- Citations: 677
Selected Publications
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DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET (2026)
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SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region (2025)
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Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET (2025)
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Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode (2025)
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
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Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design (2024)
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GaN HEMT and Air Core Magnetics based Power Converters Evaluations at Cryogenic Temperature (2024)
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LTspice Modeling for GaN-GIT HEMT Including Cryogenic Temperature (2024)
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Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region (2024)
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Cryogenic Overcurrent Characteristic of GaN HEMT and Converter Evaluation (2024)
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Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature (2023)
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Deep Cryogenic Characterization of GaN HEMT at 4K (2023)
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Evaluation and Modeling of SiC Based Power Converter for Low Temperature Operation (2023)
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Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature (2022)
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Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions (2022)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
30 shared publications
In database
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior
- Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions
- Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature
- Evaluation and Modeling of SiC Based Power Converter for Low Temperature Operation
Showing 5 of 30 shared publications
Yuqi Wei
University of Arkansas at Fayetteville (US)
26 shared publications
- Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions
- Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Comprehensive Cryogenic Characterizations of a Commercial 650 V GaN HEMT
- Cryogenic Static and Dynamic Characterizations of 650 V Field Stop Trench Si IGBT
Showing 5 of 26 shared publications
Alan Mantooth
University of Arkansas at Fayetteville
11 shared publications
In database
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Comprehensive Cryogenic Characterizations of a Commercial 650 V GaN HEMT
- Cryogenic Static and Dynamic Characterizations of 650 V Field Stop Trench Si IGBT
- An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior
Showing 5 of 11 shared publications
Arman Ur Rashid
University of Arkansas at Fayetteville (US)
10 shared publications
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior
- Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
Showing 5 of 10 shared publications
Abu Shahir Md Khalid Hasan
University of Arkansas at Fayetteville
9 shared publications
In database
- A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling
- Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region
- Deep Cryogenic Characterization of GaN HEMT at 4K
- Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
Showing 5 of 9 shared publications
Rosten Sweeting
University of Arkansas at Fayetteville
7 shared publications
In database
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
- Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT
- Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures
Showing 5 of 7 shared publications
Mohammad Dehan Rahman
University of Arkansas at Fayetteville
4 shared publications
In database
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
- DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET
Asif Imran Emon
Stony Brook University (US)
3 shared publications
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
Hayden Carlton
University of Arkansas at Fayetteville (US)
3 shared publications
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
Md. Moinul Islam
University of Arkansas at Fayetteville
3 shared publications
In database
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
- DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET
Yuxiang Chen
University of Arkansas at Fayetteville
2 shared publications
In database
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
Fang Luo
Stony Brook University (US)
2 shared publications
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
John Harris
University of Arkansas at Fayetteville (US)
2 shared publications
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
Alexis Krone
University of Arkansas at Fayetteville
2 shared publications
In database
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
David Huitink
University of Arkansas at Fayetteville
2 shared publications
In database
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
Similar Researchers
Based on overlapping research topics
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