Md Maksudul Hossain Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

14 h-index 58 pubs 600 cited

Research Areas

Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies GaN-based semiconductor devices and materials Semiconductor materials and devices Device Modeling and Simulation

Links

ORCID Research Group

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OverviewAI-generated summary

Md Maksudul Hossain investigates the characteristics and modeling of semiconductor devices, particularly focusing on silicon carbide (SiC) and gallium nitride (GaN) power modules. His research explores the behavior of these devices under various operating conditions, including cryogenic temperatures. Hossain has published work on datasheet-driven compact models for SiC power MOSFETs, emphasizing third-quadrant operation and computational efficiency in SPICE simulations. He also examines the design and optimization of gate driver integrated multichip 3-D GaN power modules and reviews hybrid Si/SiC switches, covering control objectives, gate driving, and packaging. His recent publications include evaluations of SiC-based power converters for low-temperature operation and comprehensive cryogenic characterizations of GaN HEMTs and Si IGBTs. Hossain collaborates with several researchers at the University of Arkansas at Fayetteville, including Alan Mantooth and H. Alan Mantooth, with whom he shares multiple publications.

Metrics

  • h-index: 14
  • Publications: 58
  • Citations: 600

Selected Publications

  • SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region (2025) DOI
  • Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET (2025) DOI
  • Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode (2025) DOI
  • Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024) DOI
  • Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design (2024) DOI
  • GaN HEMT and Air Core Magnetics based Power Converters Evaluations at Cryogenic Temperature (2024) DOI
  • LTspice Modeling for GaN-GIT HEMT Including Cryogenic Temperature (2024) DOI
  • Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region (2024) DOI
  • Cryogenic Overcurrent Characteristic of GaN HEMT and Converter Evaluation (2024) DOI
  • Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature (2023) DOI
  • Deep Cryogenic Characterization of GaN HEMT at 4K (2023) DOI
  • Evaluation and Modeling of SiC Based Power Converter for Low Temperature Operation (2023) DOI
  • Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature (2022) DOI
  • Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions (2022) DOI
  • A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling (2022) DOI

Collaborators

Researchers in the database who share publications

Alan Mantooth University of Arkansas at Fayetteville 9 shared publications H. Alan Mantooth University of Arkansas at Fayetteville 8 shared publications Abu Shahir Md Khalid Hasan University of Arkansas at Fayetteville 8 shared publications Rosten Sweeting University of Arkansas at Fayetteville 7 shared publications Mohammad Dehan Rahman University of Arkansas at Fayetteville 3 shared publications Dereje Woldegiorgis University of Arkansas at Fayetteville 2 shared publications Xia Du University of Arkansas at Fayetteville 2 shared publications Alexis Krone University of Arkansas at Fayetteville 2 shared publications

Similar Researchers

Based on overlapping research topics

H.A. Mantooth University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies GaN-based semiconductor devices and materials
Strong match 4 shared topics
Abu Shahir Md Khalid Hasan University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies GaN-based semiconductor devices and materials
Strong match 4 shared topics
Yuxiang Chen University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies GaN-based semiconductor devices and materials
Strong match 4 shared topics
Rosten Sweeting University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies GaN-based semiconductor devices and materials
Strong match 4 shared topics
Rayna Alizadeh University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies GaN-based semiconductor devices and materials
Strong match 4 shared topics
K.Y. Chen University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies Semiconductor materials and devices
Good match 3 shared topics