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Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-09
M
Morgan E. Ware
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Federal Grant PI
High Impact
Assistant Professor
Also affiliated: United States Air Force Research Laboratory (2020); Argonne National Laboratory (1997); United States Naval Research Laboratory (2003–2006); North Carolina State University (1999–2005); California NanoSystems Institute (2014); National Academy of Sciences of Ukraine (2017); University of Electronic Science and Technology of China (2017); KBR (United States) (2020); University of California, Los Angeles (2014); Yale University (2014); Ohio University (2008); V.E. Lashkaryov Institute of Semiconductor Physics (2017); State Key Laboratory of Electronic Thin Films and Integrated Devices (2017); Ioffe Institute (2004–2006)
23 h-index
204 pubs
2,898 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Morgan E. Ware, an Assistant Professor at the University of Arkansas at Fayetteville, has a research background focused on semiconductor materials and devices, particularly quantum dots and related nanostructures. Ware’s work has investigated optical properties, electronic spin dynamics, and the potential for applications such as room-temperature electrical spin pumping and temperature sensing in high-power electronics.
With a substantial publication record of over 200 articles and a citation count exceeding 2,900, Ware is recognized as a highly cited researcher. Their work has been supported by significant federal funding, including a $3,000,000 NSF grant for the NRT-QISE program, which aims to bridge quantum materials and engineering with STEM education. Ware actively collaborates with other researchers at the University of Arkansas, including Yuriy I. Mazur and Gregory J. Salamo, with whom they have co-authored numerous publications.
Metrics
- h-index: 23
- Publications: 204
- Citations: 2,898
Positions
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Assistant Professor 2023–presentUniversity of Arkansas Department of Electrical Engineering and Computer Science ORCID
Selected Publications
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Probing the Broken Time Reversal Symmetry in Monolayers Using the Z-Scan Technique (2025)
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Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State Mixing (2025)
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Effects of short- and long-range disorder in the photoluminescence of GaAs 1 − x Sb x / GaAs quantum wells (2025)
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Investigating the efficiency of InGaN p-n-p-n homojunction solar cells (2025)
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Investigation of carrier dynamics by steady-state and transient photoluminescence for a quaternary InGaAsSb/GaAs multiple quantum wells heterostructure (2025)
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Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025)
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Optical Characterization of the Interplay Between Carrier Localization and Carrier Injection in Self-Assembled GaSb/GaAs Quantum Dots (2025)
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Optical spin polarization by coherent magnetoabsorption generation (2025)
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Optical characterization of the type-II hybrid nanostructure with the GaSb/GaAs quantum dots coupled to an InGaAs/GaAs quantum well (2025)
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Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux (2024)
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Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk (2024)
Federal Grants 1 $3,000,000 total
NSF
PI
Aug 2023 - Jul 2028
NRT-QISE: Bridging the Gap Between 2D Quantum Materials and Engineering in STEM Education
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
107 shared publications
In database
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- Super Low Density InGaAs Semiconductor Ring-Shaped Nanostructures
- AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents
- Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate
- Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
Showing 5 of 107 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
66 shared publications
In database
- Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
- Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate
- Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy
Showing 5 of 66 shared publications
Yu. I. Mazur
University of Arkansas at Fayetteville
37 shared publications
In database
- Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures
- Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures
- Electron transport in quantum dot chains: Dimensionality effects and hopping conductance
- InGaAs quantum wire intermediate band solar cell
- Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains
Showing 5 of 37 shared publications
Baolai Liang
California NanoSystems Institute (US)
35 shared publications
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
- Comparative study of photoluminescence from In 0.3 Ga 0.7 As/GaAs surface and buried quantum dots
- Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
- Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots
Showing 5 of 35 shared publications
V. G. Dorogan
University of Arkansas at Fayetteville (US)
25 shared publications
- Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures
- Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures
- InGaAs quantum wire intermediate band solar cell
- Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains
- Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures
Showing 5 of 25 shared publications
Shufang Wang
Hebei University (CN)
23 shared publications
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
- Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
- Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
Showing 5 of 23 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
20 shared publications
- Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
- The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study
- Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
- Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy
- Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy
Showing 5 of 20 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
20 shared publications
In database
- Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate
- Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures
- Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures
- Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains
- Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
Showing 5 of 20 shared publications
Ying Wang
Hebei University (CN)
19 shared publications
- Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
- Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy
Showing 5 of 19 shared publications
Guangsheng Fu
Hebei University (CN)
19 shared publications
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
- Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
- Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
Showing 5 of 19 shared publications
A. E. Belyaev
National Academy of Sciences of Ukraine (UA)
16 shared publications
- Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
- Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices
- The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study
- Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
- Optical and structural study of deformation states in the GaN/AlN superlattices
Showing 5 of 16 shared publications
G. G. Tarasov
National Academy of Sciences of Ukraine (UA)
16 shared publications
- Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures
- Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures
- Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures
- Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures
- Interface roughness scattering in laterally coupled InGaAs quantum wires
Showing 5 of 16 shared publications
Mirsaeid Sarollahi
Intel (United States)
16 shared publications
In database
- Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime
- Thermally-induced nonlinear optical properties of silver nano-films near surface plasmon resonance
- Investigation of linear and nonlinear optical properties of amorphous carbon nanofilms prepared by electron beam evaporation
- High temperature capacitors using AlN grown by MBE as the dielectric
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
Showing 5 of 16 shared publications
Yurii Maidaniuk
University of Arkansas at Fayetteville
13 shared publications
In database
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Optical and structural study of deformation states in the GaN/AlN superlattices
- Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers
- Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
Showing 5 of 13 shared publications
Yingnan Guo
Hebei University (CN)
13 shared publications
- Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
- Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots
- Comparative study of photoluminescence for type-I InAs/GaAs0.89Sb0.11 and type-II InAs/GaAs0.85Sb0.15 quantum dots
Showing 5 of 13 shared publications
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Based on overlapping research topics
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