Gregory J. Salamo
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Distinguished Professor
Also affiliated: University of Central Florida (2005–2006); University of Jordan (2009); California Institute of Technology (2002); U.S. National Science Foundation (1999); California NanoSystems Institute (2010–2014); National Academy of Sciences of Ukraine (2017); University of Electronic Science and Technology of China (2017); University of California, Los Angeles (2010–2014); DEVCOM Army Research Laboratory (1998–2002); University of New Mexico (1999); Duke University (2009); Alabama Agricultural and Mechanical University (1993); Drew University (2002); United States Naval Academy (1993); University College Cork (2010); Yale University (2014); United States Army (1988–1993); Munster Technological University (2010); Ohio University (2008); V.E. Lashkaryov Institute of Semiconductor Physics (2017); National Institute for Research and Development of Isotopic and Molecular Technologies (2008–2009); Cork Institute of Technology (2010); State Key Laboratory of Electronic Thin Films and Integrated Devices (2017); U.S. Army Communications-Electronics Command (1990–1992); Rockwell International (United States) (1987–1993); Night Vision and Electronic Sensors Directorate (1992); Tyndall National Institute (2010); The University of Texas at Austin (2005–2008)
Research Areas
Biomedical Subjects
Biography and Research Information
OverviewAI-generated summary
Gregory J. Salamo is a Distinguished Professor at the University of Arkansas at Fayetteville, with a research focus on the physics of semiconductor quantum dots and optical phenomena in materials. His work investigates the behavior of light and matter at the nanoscale, particularly concerning quantum emitters and their interactions with optical cavities and plasmonic structures.
Salamo's research has been supported by federal grants totaling over $19 million. Notable among these is a $17.8 million NSF grant for the implementation of a National Silicon Carbide Research Fabrication Facility, where he serves as Co-PI. He also holds a Co-PI role on an NSF grant for the Center for High-Frequency Electronics and Circuits for Communication Systems (CHECCS).
His scholarly output includes over 700 publications and a citation count exceeding 15,000, reflected in his h-index of 52. He is recognized as a highly cited researcher and maintains active collaborations with colleagues at the University of Arkansas, including Yuriy I. Mazur, Shui-Qing Yu, Fernando Maia de Oliveira, and Hryhorii Stanchu, with whom he has co-authored numerous publications.
Metrics
- h-index: 52
- Publications: 721
- Citations: 15,938
Positions
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Distinguished Professor 1975–presentUniversity Arkansas Physics ORCID
Selected Publications
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)arXiv (Cornell University) OpenAlex
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State Mixing (2025)
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Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
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Study of group III-V waveguides on sapphire platform for photonic integrated circuits (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Optical spin polarization by coherent magnetoabsorption generation (2025)
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Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001) (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures (2025)
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Temperature Dependent Optical Properties of Ultrathin Inas Quantum Well (2024)
Federal Grants 2 $19,124,748 total
Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility
Collaboration Network
Top Collaborators
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- Self-organization of quantum-dot pairs by high-temperature droplet epitaxy
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
Showing 5 of 74 shared publications
- Coherent Exciton–Surface-Plasmon-Polariton Interaction in Hybrid Metal-Semiconductor Nanostructures
- InGaAs quantum dot molecules around self-assembled GaAs nanomound templates
- Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)
- Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation
- Aharonov-Bohm Interference in Neutral Excitons: Effects of Built-In Electric Fields
Showing 5 of 45 shared publications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
- Toward Single Atom Chains with Exfoliated Tellurium
- Exfoliation energy, quasiparticle band structure, and excitonic properties of selenium and tellurium atomic chains
Showing 5 of 42 shared publications
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- Super Low Density InGaAs Semiconductor Ring-Shaped Nanostructures
- Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
- AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents
- Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate
Showing 5 of 37 shared publications
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- Uniform thickness and colloidal-stable CdS quantum disks with tunable thickness: Synthesis and properties
- Aharonov-Bohm Interference in Neutral Excitons: Effects of Built-In Electric Fields
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
Showing 5 of 33 shared publications
- Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100)
- InGaAs quantum dot molecules around self-assembled GaAs nanomound templates
- Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation
- Low density InAs quantum dots grown on GaAs nanoholes
- Interdot carrier transfer in asymmetric bilayer InAs∕GaAs quantum dot structures
Showing 5 of 33 shared publications
- InGaAs quantum dot molecules around self-assembled GaAs nanomound templates
- Low density InAs quantum dots grown on GaAs nanoholes
- Strain-free ring-shaped nanostructures by droplet epitaxy for photovoltaic application
- Configuration control of quantum dot molecules by droplet epitaxy
- Evolution between self-assembled single and double ring-like nanostructures
Showing 5 of 30 shared publications
- Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices
- X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
Showing 5 of 29 shared publications
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
Showing 5 of 28 shared publications
- Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100)
- Low density InAs quantum dots grown on GaAs nanoholes
- Self‐Organization of InAs Quantum‐Dot Clusters Directed by Droplet Homoepitaxy
- Origin of nanohole formation by etching based on droplet epitaxy
- Localized formation of InAs quantum dots on shallow-patterned GaAs(100)
Showing 5 of 25 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
Showing 5 of 24 shared publications
- Observation of self-trapping of an optical beam due to the photorefractive effect
- Observation of two-dimensional steady-statephotorefractive screening solitons
- Three-Dimensional Spiraling of Interacting Spatial Solitons
- Waveguides formed by quasi-steady-state photorefractive spatial solitons
- Dark Photorefractive Spatial Solitons and Photorefractive Vortex Solitons
Showing 5 of 23 shared publications
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- Aharonov-Bohm Interference in Neutral Excitons: Effects of Built-In Electric Fields
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
- Voltage recovery in charged InAs/GaAs quantum dot solar cells
Showing 5 of 22 shared publications
- Self-organization of quantum-dot pairs by high-temperature droplet epitaxy
- Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
- Strain-free ring-shaped nanostructures by droplet epitaxy for photovoltaic application
- Self‐assembly of GaAs holed nanostructures by droplet epitaxy
- Super Low Density InGaAs Semiconductor Ring-Shaped Nanostructures
Showing 5 of 16 shared publications
- Observation of self-trapping of an optical beam due to the photorefractive effect
- Dark Photorefractive Spatial Solitons and Photorefractive Vortex Solitons
- Dimensionality and size of photorefractive spatial solitons
- Double phase conjugation in tungsten bronze crystals
- Stability of photorefractive spatial solitons
Showing 5 of 15 shared publications
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