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Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
M
Mourad Benamara
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
High Impact
Distinguished Professor Fayetteville
Also affiliated: Centre National de la Recherche Scientifique (1989–1997); National Chung Cheng University (2024); Lawrence Berkeley National Laboratory (1998–2002); National Academy of Sciences of Ukraine (2017); University of Electronic Science and Technology of China (2017); Friedrich-Alexander-Universität Erlangen-Nürnberg (2003–2005); V.E. Lashkaryov Institute of Semiconductor Physics (2017); Centre d’Élaboration de Matériaux et d’Études Structurales (1995–1997); Motorola (France) (2002); State Key Laboratory of Electronic Thin Films and Integrated Devices (2017); Carnegie Mellon University (2003–2006); University of Tulsa (2016); Technical University of Denmark (1998–1999)
36 h-index
237 pubs
5,901 cited
Research Areas
Biomedical Subjects
Biography and Research Information
OverviewAI-generated summary
Mourad Benamara is a Distinguished Professor at the University of Arkansas at Fayetteville. His research interests encompass materials science, with a particular focus on nanomaterials and their applications. He has investigated the synthesis and properties of various nanoparticles, including gold nanoparticles derived from plant extracts and silver nanoparticles with enhanced antimicrobial activity when combined with polydopamine coatings.
His work also delves into semiconductor materials, with publications on InAs/GaAs quantum-dot lasers grown on silicon substrates and the evolution of deep centers in GaN. Benamara leads a research group and maintains an active lab website. His h-index is 36, with over 5,800 citations across 234 publications, designating him as a highly cited researcher. He has collaborated extensively with colleagues at the University of Arkansas at Fayetteville, including Hryhorii Stanchu, Fernando Maia de Oliveira, Shui-Qing Yu, and Gregory J. Salamo.
Metrics
- h-index: 36
- Publications: 237
- Citations: 5,901
Positions
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University of Arkansas at Fayetteville publications 2009–2026ORCID
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Distinguished Professor Fayetteville publications 2009–2026University of Arkansas at Fayetteville Listing
Selected Publications
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Phase-Coherent Transport in Two-Dimensional Tellurium Flakes (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Effects of short- and long-range disorder in the photoluminescence of GaAs 1 − x Sb x / GaAs quantum wells (2025)
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Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Leveraging oxygen mobility with zirconia in low-temperature plasma for enhanced methane reforming to syngas (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition (2025)
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Medium‐Entropy Engineering of Magnetism in Layered Antiferromagnet CuxNi2(1‐x)CrxP2S6 (2024)
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
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Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
65 shared publications
In database
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- Uniform thickness and colloidal-stable CdS quantum disks with tunable thickness: Synthesis and properties
- Aharonov-Bohm Interference in Neutral Excitons: Effects of Built-In Electric Fields
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
Showing 5 of 65 shared publications
Yuriy I. Mazur
Center for NanoScience
38 shared publications
In database
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
- Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate
Showing 5 of 38 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
26 shared publications
In database
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
- Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
Showing 5 of 26 shared publications
V. G. Dorogan
University of Arkansas at Fayetteville (US)
23 shared publications
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- Aharonov-Bohm Interference in Neutral Excitons: Effects of Built-In Electric Fields
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
- Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures
Showing 5 of 23 shared publications
Jiang Wu
University of Electronic Science and Technology of China (CN)
22 shared publications
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
- Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles
Showing 5 of 22 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
20 shared publications
In database
- Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate
- Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures
- Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures
- Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains
- Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
Showing 5 of 20 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
17 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
- Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
- Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers
Showing 5 of 17 shared publications
Huiyun Liu
University College London (GB)
15 shared publications
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
- Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate
- Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
Showing 5 of 15 shared publications
Yu. I. Mazur
University of Arkansas at Fayetteville
14 shared publications
In database
- Aharonov-Bohm Interference in Neutral Excitons: Effects of Built-In Electric Fields
- Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures
- Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures
- Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains
- Carrier transfer in vertically stacked quantum ring-quantum dot chains
Showing 5 of 14 shared publications
Robert A. Mayanovic
Missouri State University (US)
14 shared publications
- Magnetic properties of core–shell nanoparticles possessing a novel Fe( ii )-chromia phase: an experimental and theoretical approach
- Room-temperature ferromagnetism in Ni( ii )-chromia based core–shell nanoparticles: experiment and first principles calculations
- Tuning Exchange Coupling in NiO-Based Bimagnetic Heterostructured Nanocrystals
- Synthesis and Characterization of Novel Inverted NiO@NixMn1-xO Core-Shell Nanoparticles
- Structural and Magnetic Properties of Well-Ordered Inverted Core-Shell α-Cr2O3/ α-MxCr2-xO3 (M=Co, Ni, Mn, Fe) Nanoparticles
Showing 5 of 14 shared publications
Wei Du
University of Arkansas at Fayetteville
13 shared publications
In database
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Investigation on the Formation and Propagation of Defects in GeSn Thin Films
- Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications
Showing 5 of 13 shared publications
Aboozar Mosleh
University of Arkansas at Fayetteville
12 shared publications
In database
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
- Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy
- Investigation on the Formation and Propagation of Defects in GeSn Thin Films
Showing 5 of 12 shared publications
Mingchu Tang
University College London (GB)
12 shared publications
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
- InAs/InGaP quantum dot solar cells with an AlGaAs interlayer
Showing 5 of 12 shared publications
Yurii Maidaniuk
University of Arkansas at Fayetteville
12 shared publications
In database
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
- Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
- Optical and structural study of deformation states in the GaN/AlN superlattices
- Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
Showing 5 of 12 shared publications
Hameed A. Naseem
University of Arkansas at Fayetteville
11 shared publications
In database
- Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
- Investigation on the Formation and Propagation of Defects in GeSn Thin Films
- Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications
- Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl4 Precursor
Showing 5 of 11 shared publications
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