M
Mourad Benamara Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
High Impact
Distinguished Professor Fayetteville
faculty
35 h-index
227 pubs
5,690 cited
Research Areas
Biography and Research Information
OverviewAI-generated summary
Mourad Benamara is a Distinguished Professor at the University of Arkansas at Fayetteville. His research interests include materials science, with a focus on nanoscale materials and their applications in areas such as energy storage and catalysis. He has explored molecular layer deposition for lithium metal anodes and the use of nanoscale lithium sulfide coatings for high-performance cathode materials in batteries.
Benamara's work also extends to the development and application of covalent organic frameworks (COFs). He has investigated COFs decorated with platinum(II) for photocatalytic reactions, including difluoroalkylation and oxidative cyclization. His research has also delved into understanding metal binding modes in imine COFs for applications in photocatalytic hydrogen evolution and catalyst-enabled linkage reduction within COFs.
Additionally, his research encompasses the tuning of optical properties of nanomaterials, such as the surface plasmon resonance of gold dumbbell nanorods. He has also investigated semiconductor materials, including quantitative correlation studies of dislocation generation and strain relief in thermally annealed GeSn epilayers, and the development of electrically injected mid-infrared GeSn lasers on silicon.
Metrics
- h-index: 35
- Publications: 227
- Citations: 5,690
Selected Publications
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Phase-Coherent Transport in Two-Dimensional Tellurium Flakes (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
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Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Leveraging oxygen mobility with zirconia in low-temperature plasma for enhanced methane reforming to syngas (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition (2025)
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Medium‐Entropy Engineering of Magnetism in Layered Antiferromagnet Cu<i><sub>x</sub></i>Ni<sub>2(1‐</sub><i><sub>x</sub></i><sub>)</sub>Cr<i><sub>x</sub></i>P<sub>2</sub>S<sub>6</sub> (2024)
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
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Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024)
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On the Structural and Molecular Properties of PEO and PEO-PPG Functionalized Chitosan Nanoparticles for Drug Delivery (2024)
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Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024)
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On the Structural and Molecular Properties of PEO and PEO-PPG Functionalized Chitosan Nanoparticles for Drug Delivery (2024)
Collaboration Network
Top Collaborators
Hryhorii Stanchu
15 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 15 shared publications
Gregory J. Salamo
12 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 12 shared publications
Shui-Qing Yu
11 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 11 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
10 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 10 shared publications
Fernando Maia de Oliveira
10 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
Showing 5 of 10 shared publications
Robert A. Mayanovic
Missouri State University (US)
7 shared publications
- Tuning Exchange Coupling in NiO-Based Bimagnetic Heterostructured Nanocrystals
- Defects and Surface Chemistry of Novel PH-Tunable NiO-Mn3O4 ± MnxNi1-xO Heterostructured Nanocrystals as Determined Using X-ray Photoemission Spectroscopy
- On the synthesis and characterization of bimagnetic CoO/NiFe2O4 heterostructured nanoparticles
- On the Structural and Molecular Properties of PEO and PEO-PPG Functionalized Chitosan Nanoparticles for Drug Delivery
- On the Structural and Molecular Properties of PEO and PEO-PPG Functionalized Chitosan Nanoparticles for Drug Delivery
Showing 5 of 7 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
6 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Electrically Injected mid-infrared GeSn laser on Si operating at 140 K
- Optical Spectroscopy of Excitons in Res2 Monolayers Grown by Chemical Vapor Deposition
- Optical Spectroscopy of Excitons in Res2 Monolayers Grown by Chemical Vapor Deposition
Showing 5 of 6 shared publications
Sudip Acharya
5 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Electrically Injected mid-infrared GeSn laser on Si operating at 140 K
- Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Nirosh M. Eldose
5 shared publications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
- Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Wei Du
University of Arkansas at Fayetteville
5 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Electrically Injected mid-infrared GeSn laser on Si operating at 140 K
Bothina Hamad
5 shared publications
In database
- Optical Spectroscopy of Excitons in Res2 Monolayers Grown by Chemical Vapor Deposition
- Optical Spectroscopy of Excitons in Res2 Monolayers Grown by Chemical Vapor Deposition
- Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition
- Chemical Vapor Deposition Growth and Characterization of ReSe2
- Chemical Vapor Deposition Growth and Characterization of ReSe2
M. Hassan Beyzavi
University of Arkansas at Fayetteville
4 shared publications
In database
- Pt(II)-Decorated Covalent Organic Framework for Photocatalytic Difluoroalkylation and Oxidative Cyclization Reactions
- Probe metal binding mode of imine covalent organic frameworks: cycloiridation for (photo)catalytic hydrogen evolution from formate
- Catalyst-Enabled <i>In Situ</i> Linkage Reduction in Imine Covalent Organic Frameworks
- Fluoride etched Ni-based electrodes as economic oxygen evolution electrocatalysts
M. D. Teodoro
Universidade Federal de São Carlos (BR)
4 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Sn-Guided Self-Grown Ge Stripes Banded by Gesn Nanowires: Formation Mechanism and Electric-Field-Induced Switching from P- to N-Type Conduction
- Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
4 shared publications
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Sn-Guided Self-Grown Ge Stripes Banded by Gesn Nanowires: Formation Mechanism and Electric-Field-Induced Switching from P- to N-Type Conduction
Jingyi Chen
University of Arkansas at Fayetteville
4 shared publications
In database
- Ambient-pressure ozone treatment enables tuning of oxygen vacancy concentration in the La<sub>1−<i>x</i></sub>Sr<sub><i>x</i></sub>FeO<sub>3−<i>δ</i></sub> (0 ≤ <i>x</i> ≤ 1) perovskite oxides
- Real-Time Imaging of Laser-Induced Nanowelding of Silver Nanoparticles in Solution
- Real-time imaging of laser-induced nanowelding of silver nanoparticles in solution
- Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer
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