Y
Yurii Maidaniuk Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
13 h-index
31 pubs
435 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Yurii Maidaniuk's research focuses on the optical properties of nanostructured semiconductor materials, particularly indium gallium arsenide (InGaAs) and indium arsenide (InAs) quantum dots and wells grown on gallium arsenide (GaAs) substrates. His work investigates how material characteristics, such as indium segregation and quantum confinement effects, influence photoluminescence and efficiency in these structures. Maidaniuk has explored InAs nanostructures for solar cell applications, aiming to improve efficiency through submonolayer quantum dots. He has also studied the type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots, attributing them to Fermi level pinning effects. His research has been published in peer-reviewed journals, and he has a h-index of 13 with over 430 citations. Maidaniuk collaborates with researchers at the University of Arkansas at Fayetteville, including Yuriy I. Mazur and Morgan E. Ware.
Metrics
- h-index: 13
- Publications: 31
- Citations: 435
Selected Publications
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Temperature dependent optical properties of ultrathin InAs quantum well (2024)
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Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect (2021)
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InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot (2021)
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Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy (2021)
Collaboration Network
Top Collaborators
Rahul Kumar
University of Arkansas at Fayetteville (US)
4 shared publications
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Temperature Dependent Optical Properties of Ultrathin Inas Quantum Well
- Temperature dependent optical properties of ultrathin InAs quantum well
Gregory J. Salamo
University of Arkansas at Fayetteville
4 shared publications
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Temperature dependent optical properties of ultrathin InAs quantum well
Yuriy I. Mazur
University of Arkansas at Fayetteville
3 shared publications
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Temperature dependent optical properties of ultrathin InAs quantum well
Yu. I. Mazur
Oldham Council (GB)
2 shared publications
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Temperature Dependent Optical Properties of Ultrathin Inas Quantum Well
Shui-Qing Yu
University of Arkansas at Fayetteville (US)
2 shared publications
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
Morgan E. Ware
University of Arkansas at Fayetteville
2 shared publications
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
2 shared publications
In database
- Temperature Dependent Optical Properties of Ultrathin Inas Quantum Well
- Temperature dependent optical properties of ultrathin InAs quantum well
Mourad Benamara
University of Arkansas at Fayetteville
1 shared publication
In database
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
1 shared publication
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
Najla Alnami
University of Arkansas at Fayetteville
1 shared publication
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
Samir K. Saha
University of Arkansas at Fayetteville (US)
1 shared publication
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
Alaa A. Alnami
University of Arkansas at Fayetteville
1 shared publication
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
Reem Alhelais
University of Arkansas at Fayetteville
1 shared publication
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
Alaa Ahmad Kawagy
University of Arkansas at Fayetteville
1 shared publication
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
Xiaohui Liu
Hebei University (CN)
1 shared publication
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
Similar Researchers
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