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Current · Arkansas
Last published
2024
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2026-10-06
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Yurii Maidaniuk
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Also affiliated: National Academy of Sciences of Ukraine (2017); University of Electronic Science and Technology of China (2017); V.E. Lashkaryov Institute of Semiconductor Physics (2017); State Key Laboratory of Electronic Thin Films and Integrated Devices (2017)
13 h-index
31 pubs
454 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Yurii Maidaniuk's research focuses on the optical properties of semiconductor nanostructures, particularly indium gallium arsenide (In(Ga)As) and gallium arsenide (GaAs) quantum dots and wells. His work investigates how material characteristics influence device performance, with a recent emphasis on applications in solar cells. Maidaniuk has published research exploring the efficiency improvements in solar cells utilizing InAs nanostructures and the photoluminescence characteristics of InGaAs/GaAs surface quantum dots, attributing observed phenomena to Fermi level pinning effects. He also studies indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells, employing photoluminescence spectroscopy to reveal these effects. Maidaniuk's research further examines the temperature-dependent optical properties of ultrathin InAs quantum wells. His scholarship metrics include an h-index of 13, with 31 total publications and 440 total citations. He has collaborated on multiple publications with researchers at the University of Arkansas at Fayetteville, including Gregory J. Salamo, Yuriy I. Mazur, Morgan E. Ware, and Fernando Maia de Oliveira.
Metrics
- h-index: 13
- Publications: 31
- Citations: 454
Selected Publications
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Temperature dependent optical properties of ultrathin InAs quantum well (2024)
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Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect (2021)
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InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot (2021)
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Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy (2021)
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GaAs layer on c-plane sapphire for light emitting sources (2020)
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Growth kinetics and nanoscale structure-property relationships of InN nanostructures on GaN(0 0 0 1) (2020)
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Carrier dynamics and recombination in silicon doped InAs/GaAs quantum dot solar cells with AlAs cap layers (2020)
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Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy (2020)
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Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells (2020)
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Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation (2020)
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Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers (2020)
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Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate (2019)
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Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix (2018)
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Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers (2018)
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Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon (2018)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
29 shared publications
In database
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate
- Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
Showing 5 of 29 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
24 shared publications
In database
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate
- Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
Showing 5 of 24 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
14 shared publications
In database
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
- Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
- Optical and structural study of deformation states in the GaN/AlN superlattices
- Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
Showing 5 of 14 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
14 shared publications
In database
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Optical and structural study of deformation states in the GaN/AlN superlattices
- Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers
- Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
Showing 5 of 14 shared publications
Jiang Wu
University of Electronic Science and Technology of China (CN)
9 shared publications
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
- Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
- Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers
- Al0.2Ga0.8As Solar Cells Monolithically Grown on Si and GaAs by MBE for III-V/Si Tandem Dual-junction Applications
Showing 5 of 9 shared publications
Huiyun Liu
University College London (GB)
9 shared publications
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
- Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
- Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers
- Al0.2Ga0.8As Solar Cells Monolithically Grown on Si and GaAs by MBE for III-V/Si Tandem Dual-junction Applications
Showing 5 of 9 shared publications
Mingchu Tang
University College London (GB)
8 shared publications
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
- Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers
- Al0.2Ga0.8As Solar Cells Monolithically Grown on Si and GaAs by MBE for III-V/Si Tandem Dual-junction Applications
- 1.7eV Al0.2Ga0.8As solar cells epitaxially grown on silicon by SSMBE using a superlattice and dislocation filters
Showing 5 of 8 shared publications
Rahul Kumar
Birla Institute of Technology and Science, Pilani (IN)
7 shared publications
- Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation
- Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
- GaAs layer on c-plane sapphire for light emitting sources
Showing 5 of 7 shared publications
Shufang Wang
Hebei University (CN)
5 shared publications
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy
- Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy
Guangsheng Fu
Hebei University (CN)
5 shared publications
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy
- Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy
Baolai L. Liang
California NanoSystems Institute (US)
5 shared publications
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy
- Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy
P. M. Lytvyn
National Academy of Sciences of Ukraine (UA)
5 shared publications
- Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
- Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Kinetically controlled transition from 2D nanostructured films to 3D multifaceted InN nanocrystals on GaN(0001)
- Growth kinetics and nanoscale structure-property relationships of InN nanostructures on GaN(0 0 0 1)
Yu. I. Mazur
University of Arkansas at Fayetteville
5 shared publications
In database
- Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Kinetically controlled transition from 2D nanostructured films to 3D multifaceted InN nanocrystals on GaN(0001)
- Growth kinetics and nanoscale structure-property relationships of InN nanostructures on GaN(0 0 0 1)
- Carrier dynamics and recombination in silicon doped InAs/GaAs quantum dot solar cells with AlAs cap layers
Samir Kumar Saha
University of Arkansas at Fayetteville (US)
5 shared publications
- Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation
- Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
- GaAs layer on c-plane sapphire for light emitting sources
Qi Jiang
University College London (GB)
4 shared publications
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
- Al0.2Ga0.8As Solar Cells Monolithically Grown on Si and GaAs by MBE for III-V/Si Tandem Dual-junction Applications
- 1.7eV Al0.2Ga0.8As solar cells epitaxially grown on silicon by SSMBE using a superlattice and dislocation filters
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