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Confirmed
Presence
Current · Arkansas
Last published
2019
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
S
Sattar Al-Kabi
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
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Also affiliated: University of Wasit (2015–2017)
16 h-index
44 pubs
1,412 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Dr. Sattar Al-Kabi was a faculty member at the University of Arkansas at Fayetteville who last published in 2019. His research interests include photonic devices, semiconductor lasers, thin-film transistor technologies and advanced photonic communication systems. He also explored photonic crystals and their applications.
Metrics
- h-index: 16
- Publications: 44
- Citations: 1,412
Selected Publications
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Study of High Performance GeSn Photodetectors with Cutoff Wavelength up to 3.7 µm for Low-Cost Infrared Imaging (2019)
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Comparison Study of High-Temperature Spontaneous Emission Quantum Efficiency of Commercial LED Materials (2019)
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High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules (2019)
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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications (2019)
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Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging (2019)
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High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application (2019)
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Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications (2018)
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High Temperature Photoluminsence of InGaN-Based MQWs on Patterned Sapphire Substrates (2018)
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Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223% (2018)
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Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth (2018)
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Investigation of High Temperature Photoluminescence Efficiency from InGaN/GaN MQWs (2018)
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GePb Alloy Growth Using Layer Inversion Method (2018)
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Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure (2017)
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GeSn-based light sources and photoconductors towards integrated photonics for the mid-infrared (2017)
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Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K (2017)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
38 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 38 shared publications
Wei Du
Wilkes University
30 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 30 shared publications
Seyed Amir Ghetmiri
University of Arkansas at Fayetteville
28 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
Showing 5 of 28 shared publications
Aboozar Mosleh
University of Arkansas at Fayetteville
26 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
Showing 5 of 26 shared publications
Mansour Mortazavi
University of Arkansas at Pine Bluff
26 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 26 shared publications
Wei Dou
University of Arkansas at Fayetteville (US)
23 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 23 shared publications
Joe Margetis
ASM International (US)
23 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 23 shared publications
John Tolle
ASM International (US)
23 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 23 shared publications
Hameed A. Naseem
University of Arkansas at Fayetteville
22 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
- Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
- Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
Showing 5 of 22 shared publications
Greg Sun
University of Massachusetts Boston (US)
22 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
Showing 5 of 22 shared publications
Richard Soref
University of Massachusetts Boston (US)
22 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
Showing 5 of 22 shared publications
Baohua Li
The Ark
18 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
- Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
Showing 5 of 18 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
18 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 18 shared publications
Perry C. Grant
University of Arkansas at Fayetteville
13 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system
- Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing
Showing 5 of 13 shared publications
Thach Pham
University of Arkansas at Fayetteville
12 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- (Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics
Showing 5 of 12 shared publications