Yurii Maidaniuk
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Researcher
Also affiliated: National Academy of Sciences of Ukraine (2017); University of Electronic Science and Technology of China (2017); Center for NanoScience (2018); V.E. Lashkaryov Institute of Semiconductor Physics (2017)
Faculty Researcher
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Yurii Maidaniuk's research focuses on the optical properties of semiconductor nanostructures, particularly indium gallium arsenide (In(Ga)As) and gallium arsenide (GaAs) quantum dots and wells. His work investigates how material characteristics influence device performance, with a recent emphasis on applications in solar cells. Maidaniuk has published research exploring the efficiency improvements in solar cells utilizing InAs nanostructures and the photoluminescence characteristics of InGaAs/GaAs surface quantum dots, attributing observed phenomena to Fermi level pinning effects. He also studies indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells, employing photoluminescence spectroscopy to reveal these effects. Maidaniuk's research further examines the temperature-dependent optical properties of ultrathin InAs quantum wells. His scholarship metrics include an h-index of 13, with 31 total publications and 440 total citations. He has collaborated on multiple publications with researchers at the University of Arkansas at Fayetteville, including Gregory J. Salamo, Yuriy I. Mazur, Morgan E. Ware, and Fernando Maia de Oliveira.
Metrics
- h-index: 13
- Publications: 31
- Citations: 444
Selected Publications
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Temperature dependent optical properties of ultrathin InAs quantum well (2024)
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Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect (2021)
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InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot (2021)
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Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy (2021)
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GaAs layer on c-plane sapphire for light emitting sources (2020)
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Growth kinetics and nanoscale structure-property relationships of InN nanostructures on GaN(0 0 0 1) (2020)
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Carrier dynamics and recombination in silicon doped InAs/GaAs quantum dot solar cells with AlAs cap layers (2020)
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Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy (2020)
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Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells (2020)
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Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation (2020)
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Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N Layers (2020)
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Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate (2019)
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Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix (2018)
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Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers (2018)
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Two-colour In<sub>0.5</sub>Ga<sub>0.5</sub>As quantum dot infrared photodetectors on silicon (2018)
Collaboration Network
Top Collaborators
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Temperature dependent optical properties of ultrathin InAs quantum well
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Temperature dependent optical properties of ultrathin InAs quantum well
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Temperature dependent optical properties of ultrathin InAs quantum well
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
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