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Research Areas
Biography and Research Information
OverviewAI-generated summary
A. Ismail Ben Ali's research focuses on the development of semiconductor materials, particularly germanium-tin (GeSn) epitaxial films. His work investigates the potential for these materials to exhibit strong direct bandgap luminescence in the mid-wave infrared region. Ben Ali has explored the application of commercial chemical vapor deposition reactors for the synthesis of these advanced materials. His scholarly activity includes 5 publications with 44 citations and an h-index of 3. He collaborates with researchers at the University of Arkansas at Fayetteville, including Sudip Acharya, Shui-Qing Yu, Wei Du, and Bria Collier, with whom he shares one publication each.
Metrics
- h-index: 3
- Publications: 5
- Citations: 45
Selected Publications
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Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor (2024)
Collaboration Network
Top Collaborators
Nicholas Rosson
1 shared publication
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
Sudip Acharya
University of Arkansas at Fayetteville
1 shared publication
In database
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
Alec M. Fischer
1 shared publication
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
Bria Collier
University of Arkansas at Fayetteville
1 shared publication
In database
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
Ali Torabi
1 shared publication
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
Wei Du
University of Arkansas at Fayetteville
1 shared publication
In database
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
Shui-Qing Yu
University of Arkansas at Fayetteville
1 shared publication
In database
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
Robin C. Scott
1 shared publication
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
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