E
Emmanuel Wangila Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
5 h-index
12 pubs
73 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Emmanuel Wangila's research focuses on the growth and characterization of semiconductor materials, particularly germanium (Ge) and germanium-tin (GeSn) alloys, for optoelectronic applications. His work utilizes molecular beam epitaxy (MBE) to grow high-quality thin films and quantum wells on various substrates, including sapphire and gallium arsenide (GaAs).
His publications investigate the optical and structural properties of GeSn/SiGeSn multiple quantum wells, aiming to enhance carrier collection efficiency for integrated photonics. Wangila has explored the growth of Ge and GeSn on GaAs substrates, developing algorithms for graded compositions to optimize material properties. His research also includes the fundamental growth of germanium thin films on sapphire using MBE.
Wangila collaborates with several researchers at the University of Arkansas at Fayetteville, including Hryhorii Stanchu, Calbi Gunder, Shui-Qing Yu, and Yuriy I. Mazur. He has published 12 papers with an h-index of 5 and 67 citations.
Metrics
- h-index: 5
- Publications: 12
- Citations: 73
Selected Publications
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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024)
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The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Title: Growth of germanium thin film on sapphire by molecular beam epitaxy (2023)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2023)
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Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023)
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Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE) (2022)
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Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022)
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Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
12 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
Showing 5 of 12 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
12 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
Showing 5 of 12 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
8 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Showing 5 of 8 shared publications
Calbi Gunder
University of Arkansas at Fayetteville
8 shared publications
In database
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 8 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 7 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 7 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
6 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 6 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
5 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Abdulla Said
University of Arkansas at Fayetteville
5 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Samir K. Saha
University of Arkansas at Fayetteville (US)
5 shared publications
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
4 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Sudip Acharya
University of Arkansas at Fayetteville
4 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Aida Sheibani
University of Arkansas at Fayetteville
4 shared publications
In database
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Serhii Kryvyi
University of Arkansas at Fayetteville
4 shared publications
In database
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Grey Abernathy
University of Arkansas at Fayetteville (US)
3 shared publications
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
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