Emmanuel Wangila Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

5 h-index 12 pubs 67 cited

Research Areas

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Photonic and Optical Devices Metal and Thin Film Mechanics Nanoparticles: synthesis and applications

Links

ORCID Lab Website

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OverviewAI-generated summary

Emmanuel Wangila's research focuses on the growth and characterization of semiconductor thin films, particularly germanium (Ge) and germanium-tin (GeSn) alloys, for optoelectronic applications. His work involves employing molecular beam epitaxy (MBE) to grow these materials on various substrates, including sapphire and gallium arsenide (GaAs).

Wangila investigates the structural and optical properties of quantum wells composed of GeSn/SiGeSn, aiming to enhance carrier collection efficiency for all-group-IV photonics. His publications detail the development of algorithms for creating graded compositions of GeSn on GaAs and the growth of single crystalline Ge thin films on sapphire. He has a recently active research profile, with publications in 2022, 2023, and 2024.

His collaborations at the University of Arkansas at Fayetteville include extensive work with Hryhorii Stanchu and Calbi Gunder (8 shared publications each), as well as with Shui-Qing Yu and Yuriy I. Mazur (7 shared publications each). Wangila's scholarship metrics include an h-index of 5, with 12 total publications and 67 citations.

Metrics

  • h-index: 5
  • Publications: 12
  • Citations: 67

Selected Publications

  • High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024) DOI
  • Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024) DOI
  • The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024) DOI
  • The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024) DOI
  • Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023) DOI
  • Title: Growth of germanium thin film on sapphire by molecular beam epitaxy (2023) DOI
  • Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2023) DOI
  • Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023) DOI
  • Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE) (2022) DOI
  • Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022) DOI
  • Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022) DOI

Collaborators

Researchers in the database who share publications

Hryhorii Stanchu University of Arkansas at Fayetteville 8 shared publications Calbi Gunder University of Arkansas at Fayetteville 8 shared publications Shui-Qing Yu University of Arkansas at Fayetteville 7 shared publications Yuriy I. Mazur University of Arkansas at Fayetteville 7 shared publications Fernando Maia de Oliveira University of Arkansas at Fayetteville 7 shared publications Oluwatobi Olorunsola University of Arkansas at Fayetteville 6 shared publications Mohammad Zamani‐Alavijeh University of Arkansas at Fayetteville 6 shared publications Abdulla Said University of Arkansas at Fayetteville 5 shared publications

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