F
Fernando Maia de Oliveira Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Professor Adjunto
faculty
10 h-index
60 pubs
389 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Fernando Maia de Oliveira's research centers on semiconductor materials and devices, with a focus on group IV and III-V semiconductor heterostructures. He investigates the growth mechanisms, material quality, and physical properties of materials such as Germanium-Tin (GeSn) and Gallium Nitride (GaN) alloys. His work explores the role of dislocations and strain relief in the diffusion and electrical properties of these materials, particularly in the context of advanced electronic and optoelectronic applications. Oliveira's recent publications include studies on the thermal stability of GaN-based magnetic field sensors and the sensitivity of novel quantum well Hall sensors. He also examines the growth of direct bandgap GeSn on GaAs substrates and the formation mechanisms of Ge stripes banded by GeSn Nanowires, including their electrical switching properties. Oliveira collaborates extensively with colleagues at the University of Arkansas at Fayetteville, including Yuriy I. Mazur and Hryhorii Stanchu, with whom he has co-authored numerous publications. His scholarship metrics include an h-index of 10, with 59 total publications and 382 total citations.
Metrics
- h-index: 10
- Publications: 60
- Citations: 389
Selected Publications
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Plasma-Enhanced Graphene Coatings on Ti-6Al-4V: Insights from Non-Destructive Characterization (2026)
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Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Temperature dependent optical properties of ultrathin InAs quantum well (2024)
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Surface Roughness Measurement of Functionalized CVD Graphene and Hexagonal Boron Nitride Heterostructures Using Atomic Force Microscopy (2024)
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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
Collaboration Network
Top Collaborators
Gregory J. Salamo
33 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 33 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
32 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Thermal stability study of gallium nitride based magnetic field sensor
Showing 5 of 32 shared publications
Shui-Qing Yu
23 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence
Showing 5 of 23 shared publications
Hryhorii Stanchu
21 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 21 shared publications
Shui-Qing Yu
National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute” (UA)
15 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Thermal stability study of gallium nitride based magnetic field sensor
- Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence
Showing 5 of 15 shared publications
Mohammad Zamani‐Alavijeh
11 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Thermal stability study of gallium nitride based magnetic field sensor
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 11 shared publications
Mourad Benamara
10 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 10 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
10 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 10 shared publications
Nirosh M. Eldose
10 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Showing 5 of 10 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
9 shared publications
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 9 shared publications
M. D. Teodoro
Universidade Federal de São Carlos (BR)
7 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
Showing 5 of 7 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
7 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties
- Photoconductivity of GeSn thin films with up to 15% Sn content
Showing 5 of 7 shared publications
Calbi Gunder
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 7 shared publications
Emmanuel Wangila
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 7 shared publications
Chen Li
University of Arkansas at Fayetteville
6 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Showing 5 of 6 shared publications
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