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Presence
Current · Arkansas
Last published
2025
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OpenAlex · ORCID
Refreshed
2026-10-06
A
Aboozar Mosleh
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Also affiliated: Dartmouth College (2018); Wilkes University (2014–2018); University of Alabama (2018); University of Massachusetts Boston (2014–2018)
23 h-index
94 pubs
2,273 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Aboozar Mosleh's research focuses on the development of novel ternary alloys, specifically CSiSn, for low-cost and high-efficiency photovoltaic applications. His work includes the design of multi-junction solar cells utilizing these materials, with recent publications exploring their application on low-cost substrates. Mosleh's scholarly output includes 92 publications with over 2,100 citations, and he maintains an active research laboratory website.
His key collaborators at the University of Arkansas at Fayetteville include Hameed A. Naseem, with whom he has co-authored five publications, Seyedeh Fahimeh Banihashemian (three shared publications), and Murtadha Alher (one shared publication). Mosleh is recognized as a highly cited researcher, indicated by his h-index of 22.
Metrics
- h-index: 23
- Publications: 94
- Citations: 2,273
Selected Publications
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High-Efficiency Triple-Junction Solar Cell Design using CySi1-x-ySnx Alloys on Low-Cost substrates (2025)
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Growth of CySi1-x-ySnx Alloys for Low-Cost High-Efficiency Multi-Junction Solar Cells (2024)
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Ternary CySi1-x-ySnx Alloys for Low-Cost High-Efficiency Multi-Junction Solar Cells (2021)
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Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition (2020)
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Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System (2020)
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Investigation of Silicon Nanowires Produced by Metal-Assisted Chemical Etching Method (2020)
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Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si (2019)
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Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications (2019)
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Study of GeSn Mid-infrared Photodetectors for High Frequency Applications (2019)
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Free Carrier Plasma GeSn Modulator for Mid-Infrared Integrated Microwave Photonics (2019)
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Si-Based GeSn Photodetector for Mid-Infrared Integrated Microwave Photonics (2019)
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Development of GeSn/SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications (2019)
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Development of GeSn Emitters and Detectors towards Integrated Mid-Infrared Photonics Applications (2019)
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UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices (2019)
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Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si (2019)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
75 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 75 shared publications
Seyed Amir Ghetmiri
University of Arkansas at Fayetteville
67 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 67 shared publications
Wei Du
University of Arkansas at Fayetteville
65 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 65 shared publications
Hameed A. Naseem
University of Arkansas at Fayetteville
64 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
Showing 5 of 64 shared publications
John Tolle
ASM International (US)
54 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 54 shared publications
Greg Sun
University of Massachusetts Boston (US)
51 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 51 shared publications
Richard Soref
University of Massachusetts Boston (US)
51 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 51 shared publications
Joe Margetis
ASM International (US)
49 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 49 shared publications
Mansour Mortazavi
University of Arkansas at Pine Bluff
36 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 36 shared publications
Baohua Li
The Ark
34 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 34 shared publications
Wei Dou
University of Arkansas at Fayetteville (US)
28 shared publications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 28 shared publications
Benjamin R. Conley
University of Arkansas at Fayetteville (US)
27 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
- Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff
- Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
- Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx
Showing 5 of 27 shared publications
Sattar Al-Kabi
University of Arkansas at Fayetteville
26 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
Showing 5 of 26 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
25 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
Showing 5 of 25 shared publications
Huong Tran
University of Arkansas at Fayetteville (US)
23 shared publications
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
- Study of GeSn Mid-infrared Photodetectors for High Frequency Applications
Showing 5 of 23 shared publications
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