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Joshua M. Grant is a faculty member at the University of Arkansas at Fayetteville whose research focuses on the development and study of germanium-tin (GeSn) semiconductor materials for mid-infrared applications. His work involves the growth of pseudomorphic GeSn on silicon substrates, often utilizing aspect ratio trapping techniques to achieve high tin compositions and specific material properties. Grant investigates the optical and electrical characteristics of GeSn quantum wells and lasers, exploring their potential for integrated photonics circuits and midwave infrared device applications. His recent publications include studies on electrically injected GeSn lasers with wavelengths up to 2.7 μm, enhanced carrier collection efficiency in GeSn single quantum wells, and the development of GeSn growth for midwave infrared applications. He has a substantial publication record and collaborates with several colleagues at the University of Arkansas, including Wei Du, Solomon Ojo, Shui-Qing Yu, and Hryhorii Stanchu.
Metrics
- h-index: 13
- Publications: 41
- Citations: 911
Selected Publications
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<i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
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Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes (2025)
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Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024)
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<i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes (2024)
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Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024)
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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023)
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Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023)
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Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023)
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022)
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Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
16 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 16 shared publications
Wei Du
University of Arkansas at Fayetteville
12 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 12 shared publications
Grey Abernathy
University of Arkansas at Fayetteville (US)
10 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 10 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
9 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 9 shared publications
Baohua Li
9 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 9 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
8 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
Showing 5 of 8 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
6 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
Showing 5 of 6 shared publications
Guo‐En Chang
National Chung Cheng University (TW)
6 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
Showing 5 of 6 shared publications
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
6 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Showing 5 of 6 shared publications
Samir K. Saha
University of Arkansas at Fayetteville (US)
5 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Sudip Acharya
University of Arkansas at Fayetteville
5 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Enbo Yang
University of Arkansas at Fayetteville
5 shared publications
In database
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Mechanisms of Gas Phase Reactions in Germanium-Tin Chemical Vapor Deposition Processes Determined By in Situ Mass Spectrometric Investigation
- A Real-Time Chemical Vapor Deposition Optical Monitoring System for Ge<sub>1-X</sub>Sn<sub>x</sub> Growth Optimization
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
Alexander Golden
University of Arkansas at Fayetteville
5 shared publications
In database
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Mechanisms of Gas Phase Reactions in Germanium-Tin Chemical Vapor Deposition Processes Determined By in Situ Mass Spectrometric Investigation
- A Real-Time Chemical Vapor Deposition Optical Monitoring System for Ge<sub>1-X</sub>Sn<sub>x</sub> Growth Optimization
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
Yiyin Zhou
University of Arkansas at Fayetteville
4 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
Sylvester Amoah
University of Arkansas at Fayetteville
4 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
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