Joshua M. Grant

Researcher

University of Arkansas at Fayetteville

faculty

13 h-index 42 pubs 878 cited

Research Areas

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Photonic and Optical Devices Semiconductor Lasers and Optical Devices 2D Materials and Applications

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OverviewAI-generated summary

Joshua M. Grant's research focuses on semiconductor materials and devices, particularly within the realm of group-IV photonics. His work investigates the growth and properties of Germanium-Tin (GeSn) alloys for mid-infrared applications. Grant has explored the development of GeSn lasers, including electrically injected devices and those with dual wavelength emission capabilities, aiming for integration into silicon photonics platforms.

His publications detail advancements in growing pseudomorphic GeSn with high tin composition and improving the efficiency of GeSn quantum wells for integrated photonic circuits. Grant also studies the material aspects of Germanium growth using techniques like aspect ratio trapping on silicon substrates. He has a publication record of 42 papers with 878 citations and an h-index of 13. Grant collaborates with several faculty members at the University of Arkansas at Fayetteville, including Wei Du, Solomon Ojo, Shui-Qing Yu, and Hryhorii Stanchu.

Metrics

  • h-index: 13
  • Publications: 42
  • Citations: 878

Selected Publications

  • <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025) DOI
  • Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes (2025) DOI
  • Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024) DOI
  • <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes (2024) DOI
  • Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024) DOI
  • Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023) DOI
  • Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023) DOI
  • Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023) DOI
  • Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022) DOI
  • Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022) DOI
  • Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022) DOI
  • Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021) DOI
  • Electrically injected GeSn lasers with peak wavelength up to 2.7  μm (2021) DOI

Collaborators

Researchers in the database who share publications

Wei Du University of Arkansas at Fayetteville 12 shared publications Solomon Ojo University of Arkansas at Fayetteville 9 shared publications Shui-Qing Yu University of Arkansas at Fayetteville 8 shared publications Hryhorii Stanchu University of Arkansas at Fayetteville 8 shared publications Oluwatobi Olorunsola University of Arkansas at Fayetteville 6 shared publications Sudip Acharya University of Arkansas at Fayetteville 5 shared publications Enbo Yang University of Arkansas at Fayetteville 5 shared publications Alexander Golden University of Arkansas at Fayetteville 5 shared publications

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