Research Areas
Biography and Research Information
OverviewAI-generated summary
Malak I. Refaei's research investigates the luminescence properties of gallium nitride (GaN) and indium gallium nitride (InGaN) semiconductor materials. Their work includes experimental and simulation-based comparisons to understand these properties in double graded structures. Refaei has collaborated with researchers at the University of Arkansas at Fayetteville, including Yuriy I. Mazur, Reem Alhelais, Shiva Davari, and Morgan E. Ware, on shared publications. Their scholarly output to date consists of one publication, which has garnered two citations, and an h-index of 1.
Metrics
- h-index: 1
- Publications: 1
- Citations: 2
Selected Publications
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Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures (2021)
Collaboration Network
Top Collaborators
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
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