Match tier
Confirmed
Presence
Current · Arkansas
Last published
2024
Sources
OpenAlex · ORCID
Refreshed
2026-08-08
P
Pijush K. Ghosh
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
PhD Student
Also affiliated: Indian Institute of Technology Madras (2018); University of Hyderabad (1997–1998)
Graduate Student Researcher
5 h-index
20 pubs
93 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Pijush K. Ghosh is a PhD student at the University of Arkansas at Fayetteville whose research focuses on semiconductor materials and device engineering. His work involves investigating the properties of materials such as gallium nitride (GaN) and indium gallium nitride (InGaN) for applications in electronics, particularly in environments exposed to ionizing radiation. Ghosh has published research on topics including strain engineering in mismatched materials, the development of low-resistance Ohmic contacts, and the correlation between electrical and optical measurements in degenerate indium nitride (InN) thin films. His publications also explore energy band engineering to enhance the resilience of electronics against radiation damage, utilizing quantum gettering techniques. Ghosh collaborates with several researchers at the University of Arkansas, including Morgan E. Ware and Yuriy I. Mazur, with whom he has co-authored multiple publications.
Metrics
- h-index: 5
- Publications: 20
- Citations: 93
Selected Publications
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Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells (2024)
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Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film (2023)
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Low resistance Ohmic contacts to graded InGaN (2022)
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Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift (2021)
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Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures (2021)
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Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering (2021)
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Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells) (2020)
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Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N Layers (2020)
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Plasmonic emission of hybrid Au/Ag bullseye nanostructures (2019)
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Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix (2018)
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High temperature capacitors using AlN grown by MBE as the dielectric (2018)
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Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures (2018)
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Calculated thickness dependent plasmonic properties of gold nanobars in the visible to near-infrared light regime (2017)
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Plasmonic resonance shift for various nanodevice geometries (2016)
Collaboration Network
Top Collaborators
Morgan E. Ware
University of Arkansas at Fayetteville
6 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Low resistance Ohmic contacts to graded InGaN
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Showing 5 of 6 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
4 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
3 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Gregory J. Salamo
University of Arkansas at Fayetteville
3 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Mirsaeid Sarollahi
University of Arkansas at Fayetteville (US)
2 shared publications
- Low resistance Ohmic contacts to graded InGaN
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Reem Alhelais
Taif University
2 shared publications
In database
- Low resistance Ohmic contacts to graded InGaN
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Kevin Goodman
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Timothy A. Morgan
Naval Surface Warfare Center (US)
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Robert S. Cooper
Naval Surface Warfare Center (US)
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Samuel McHenry
Naval Surface Warfare Center (US)
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Jeff Titus
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Matthew R. Halstead
Johns Hopkins University Applied Physics Laboratory (US)
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Manal A. Aldawsari
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Shiva Davari
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Malak I. Refaei
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
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