P
Pijush K. Ghosh Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
PhD Student
grad_student
5 h-index
20 pubs
91 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Pijush K. Ghosh's research focuses on semiconductor materials and devices, particularly exploring strain effects, electrical properties, and luminescence in materials such as GaN, InGaN, and InN. His work investigates methods to model Raman shifts in large lattice-mismatched materials and the development of low-resistance Ohmic contacts for graded InGaN. Ghosh also studies spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells and compares experimental and simulation results for luminescence properties of graded GaN/InGaN/GaN structures. Additionally, his research addresses energy band engineering for hardened electronics in ionizing radiation environments using quantum gettering. Ghosh has a scholarly profile with an h-index of 5, 20 total publications, and 90 total citations. He collaborates with several faculty members at the University of Arkansas at Fayetteville, including Morgan E. Ware, Yuriy I. Mazur, Fernando Maia de Oliveira, and Reem Alhelais, with whom he shares multiple publications.
Metrics
- h-index: 5
- Publications: 20
- Citations: 91
Selected Publications
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Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells (2024)
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Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film (2023)
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Low resistance Ohmic contacts to graded InGaN (2022)
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Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift (2021)
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Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures (2021)
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Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering (2021)
Collaboration Network
Top Collaborators
Morgan E. Ware
University of Arkansas at Fayetteville
6 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Low resistance Ohmic contacts to graded InGaN
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Showing 5 of 6 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville (US)
5 shared publications
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Low resistance Ohmic contacts to graded InGaN
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Yuriy I. Mazur
University of Arkansas at Fayetteville
4 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
3 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Gregory J. Salamo
University of Arkansas at Fayetteville
3 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Mirsaeid Sarollahi
University of Arkansas at Fayetteville (US)
2 shared publications
- Low resistance Ohmic contacts to graded InGaN
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Reem Alhelais
Taif University
2 shared publications
In database
- Low resistance Ohmic contacts to graded InGaN
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Kevin Goodman
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Timothy A. Morgan
Naval Surface Warfare Center (US)
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Robert S. Cooper
Naval Surface Warfare Center (US)
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Samuel McHenry
Naval Surface Warfare Center (US)
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Jeff Titus
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Matthew R. Halstead
Johns Hopkins University Applied Physics Laboratory (US)
1 shared publication
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Manal A. Aldawsari
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Shiva Davari
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
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