J. A. Bass Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
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Biography and Research Information
OverviewAI-generated summary
J. A. Bass's research focuses on semiconductor materials and devices, with a particular emphasis on exploring their applications in integrated microwave-photonic systems and optoelectronics. Recent publications include work on electrically injected Germanium-Tin (GeSn) lasers capable of emitting at wavelengths up to 2.7 micrometers, and investigations into the impact of nonlinear effects in silicon for advanced microwave-photonic applications. This work involves collaborations with other researchers at the University of Arkansas at Fayetteville, including Shui-Qing Yu and Wei Du, with whom Bass has co-authored multiple publications. Bass's scholarly output includes 12 publications with 93 citations, and an h-index of 3, indicating recent activity in the field.
Metrics
- h-index: 3
- Publications: 12
- Citations: 97
Selected Publications
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
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Impact of nonlinear effects in Si towards integrated microwave-photonic applications (2021)
Collaboration Network
Top Collaborators
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
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