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Confirmed
Presence
Current · Arkansas
Last published
2021
Sources
OpenAlex · ORCID
Refreshed
2026-10-04
J
J. A. Bass
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
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Also affiliated: Goddard Space Flight Center (1970–1978); Hi-Z Technology (United States) (2003)
3 h-index
12 pubs
104 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
J. A. Bass is a faculty member at the University of Arkansas at Fayetteville whose research focuses on semiconductor materials and devices. Bass has published work on electrically injected germanium-tin (GeSn) lasers with wavelengths extending to 2.7 micrometers, as well as the impact of nonlinear effects in silicon for integrated microwave-photonic applications. These publications demonstrate a focus on the development and application of advanced semiconductor technologies for optoelectronic and photonic systems. Bass has collaborated with researchers Shui-Qing Yu, Wei Du, Yiyin Zhou, and Gregory J. Salamo, all from the University of Arkansas at Fayetteville, on shared publications, indicating an active research network within the institution.
Metrics
- h-index: 3
- Publications: 12
- Citations: 104
Selected Publications
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
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Impact of nonlinear effects in Si towards integrated microwave-photonic applications (2021)
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The effect of two-photon absorption on the dynamic range of integrated microwave photonics links (2020)
Collaboration Network
Top Collaborators
Huong Tran
University of Arkansas at Fayetteville (US)
3 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- The effect of two-photon absorption on the dynamic range of integrated microwave photonics links
Wei Du
Wilkes University
3 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- The effect of two-photon absorption on the dynamic range of integrated microwave photonics links
Shui-Qing Yu
University of Arkansas at Fayetteville
3 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- The effect of two-photon absorption on the dynamic range of integrated microwave photonics links
Richard Soref
University of Massachusetts Boston (US)
2 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
Brandon Brea
Wilkes University (US)
1 shared publication
- The effect of two-photon absorption on the dynamic range of integrated microwave photonics links
Richard Soref
University of Massachusetts Boston (US)
1 shared publication
- The effect of two-photon absorption on the dynamic range of integrated microwave photonics links
Yiyin Zhou
University of Arkansas at Fayetteville
1 shared publication
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Solomon Ojo
University of Arkansas at Fayetteville
1 shared publication
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Chenwei Wu
National Chung Cheng University (TW)
1 shared publication
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Yuanhao Miao
University of Arkansas at Fayetteville (US)
1 shared publication
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Joshua M. Grant
University of Arkansas at Fayetteville
1 shared publication
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Grey Abernathy
University of Arkansas at Fayetteville (US)
1 shared publication
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Sylvester Amoah
University of Arkansas at Fayetteville
1 shared publication
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Gregory J. Salamo
University of Arkansas at Fayetteville
1 shared publication
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Guo‐En Chang
National Chung Cheng University (TW)
1 shared publication
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
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