Oleksandr I. Datsenko Data-verified
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Oleksandr I. Datsenko's research investigates the optical and electronic properties of semiconductor materials, with a particular focus on molybdenum disulfide (MoS2) and aluminum nitride (AlN) thin films. His work explores phenomena such as trion binding energy, photoluminescence, and the influence of strain and polycrystallinity on these properties. Datsenko also contributes to research on radar surveillance systems, focusing on optimizing data processing structures and the probability of data transmission. His collaborations include work with Yuriy I. Mazur, Fernando Maia de Oliveira, Morgan E. Ware, and Shui-Qing Yu at the University of Arkansas at Fayetteville. Datsenko has published 64 papers, accumulating 898 citations, and holds an h-index of 15. His recent publications span topics from optoelectronics in 2D materials to signal processing in radar systems.
Metrics
- h-index: 15
- Publications: 64
- Citations: 898
Selected Publications
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Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025)
Collaboration Network
Top Collaborators
- Trion Binding Energy Variation on Photoluminescence Excitation Energy and Power during Direct to Indirect Bandgap Crossover in Monolayer and Few-Layer MoS<sub>2</sub>
- Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study
- Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS<sub>2</sub>: Strain Effects Influencing Application in Nano-Optoelectronics
- Hexagram bi-layer MoS2 flake: The impact of polycrystallinity and strains on the exciton and trion photoluminescence
- Tensile strain creates trion: Excitonic photoluminescence distribution over bilayer MoS2 grown by CVD
Showing 5 of 15 shared publications
- Trion Binding Energy Variation on Photoluminescence Excitation Energy and Power during Direct to Indirect Bandgap Crossover in Monolayer and Few-Layer MoS<sub>2</sub>
- Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study
- Hexagram bi-layer MoS2 flake: The impact of polycrystallinity and strains on the exciton and trion photoluminescence
- Photoluminescence thermometry using broadband multi-peak detection in Eu2+/Eu3+-codoped oxygen-rich AlN film
- InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels
Showing 5 of 9 shared publications
- Enhanced photoconductivity of hybrid 2D-QD MoS2–AgInS2 structures
- Influence of Illumination Spectrum on Dissociation Kinetics of Iron–Boron Pairs in Silicon
- Deep level transient spectroscopy and theoretical modelling of defect states in few-layer MoS2
- Photoconductivity of GeSn thin films with up to 15% Sn content
- Lateral photoconductivity of GeSn alloys
Showing 5 of 8 shared publications
- Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study
- Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS<sub>2</sub>: Strain Effects Influencing Application in Nano-Optoelectronics
- Tensile strain creates trion: Excitonic photoluminescence distribution over bilayer MoS2 grown by CVD
- InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels
- Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations
Showing 5 of 6 shared publications
- Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS<sub>2</sub>: Strain Effects Influencing Application in Nano-Optoelectronics
- Tensile strain creates trion: Excitonic photoluminescence distribution over bilayer MoS2 grown by CVD
- MoS2 monolayer quantum dots on a flake: Efficient sensitization of exciton and trion photoluminescence via resonant nonradiative energy and charge transfers
- Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations
- Plasmonic surface-enhanced Raman scattering of multilayer HfS2 by Ag nanoprisms, Au nanorods, and nanospheres
- Photoluminescence thermometry using broadband multi-peak detection in Eu2+/Eu3+-codoped oxygen-rich AlN film
- MoS2 monolayer quantum dots on a flake: Efficient sensitization of exciton and trion photoluminescence via resonant nonradiative energy and charge transfers
- High-sensitive optical thermometry via thermally coupled levels of Er in AlN thin film
- Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations
- Sm3+-doped oxygen-rich AlN film: Probing luminescence thermometry and evidencing energy transfer via Sm-O pairs
- Optimization of the Probability of Transmission of Flight Data in the Response Channel of Secondary Radar Systems
- Frequency Efficiency Evaluation of Query Airspace Surveillance Systems
- Signal Provision of Address Systems Identification Friend or Foe
- Comparative Analysis of Methods for Processing Data Transmission Information Codes by Secondary Radar Channels
- Quality Evaluation of Flight Data Transmission by the Response Channel of Secondary Radar
- Optimization of the Probability of Transmission of Flight Data in the Response Channel of Secondary Radar Systems
- Frequency Efficiency Evaluation of Query Airspace Surveillance Systems
- Signal Provision of Address Systems Identification Friend or Foe
- Comparative Analysis of Methods for Processing Data Transmission Information Codes by Secondary Radar Channels
- Quality Evaluation of Flight Data Transmission by the Response Channel of Secondary Radar
- Photoconductivity of GeSn thin films with up to 15% Sn content
- Lateral photoconductivity of GeSn alloys
- Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys
- Impedance spectroscopy and AC conductivity mechanism in GeSn thin films
- Trion Binding Energy Variation on Photoluminescence Excitation Energy and Power during Direct to Indirect Bandgap Crossover in Monolayer and Few-Layer MoS<sub>2</sub>
- Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study
- Hexagram bi-layer MoS2 flake: The impact of polycrystallinity and strains on the exciton and trion photoluminescence
- MoS2 monolayer quantum dots on a flake: Efficient sensitization of exciton and trion photoluminescence via resonant nonradiative energy and charge transfers
- Trion Binding Energy Variation on Photoluminescence Excitation Energy and Power during Direct to Indirect Bandgap Crossover in Monolayer and Few-Layer MoS<sub>2</sub>
- Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study
- Hexagram bi-layer MoS2 flake: The impact of polycrystallinity and strains on the exciton and trion photoluminescence
- MoS2 monolayer quantum dots on a flake: Efficient sensitization of exciton and trion photoluminescence via resonant nonradiative energy and charge transfers
- Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study
- Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS<sub>2</sub>: Strain Effects Influencing Application in Nano-Optoelectronics
- Tensile strain creates trion: Excitonic photoluminescence distribution over bilayer MoS2 grown by CVD
- Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations
- Trion Binding Energy Variation on Photoluminescence Excitation Energy and Power during Direct to Indirect Bandgap Crossover in Monolayer and Few-Layer MoS<sub>2</sub>
- Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study
- InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels
- Photoconductivity of GeSn thin films with up to 15% Sn content
- Lateral photoconductivity of GeSn alloys
- Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys
- Enhanced photoconductivity of hybrid 2D-QD MoS2–AgInS2 structures
- Photoconductivity of GeSn thin films with up to 15% Sn content
- Photoconductivity mechanism in monolayer MoS2
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