Sylvester Amoah Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

7 h-index 25 pubs 389 cited

Research Areas

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Photonic and Optical Devices Metal and Thin Film Mechanics

Links

ORCID Lab Website

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OverviewAI-generated summary

Sylvester Amoah's research focuses on the development and investigation of semiconductor materials, particularly germanium-tin (GeSn) and silicon-germanium-tin (SiGeSn) alloys, for photonic applications. His work involves studying the growth of these materials using techniques such as molecular beam epitaxy (MBE) and exploring their properties for integrated circuits and infrared detection. Recent publications detail the growth of pseudomorphic GeSn with specific tin compositions, the development of monolithic germanium-tin on silicon avalanche photodiodes, and the performance of electrically injected GeSn lasers operating at specific wavelengths.

Amoah also investigates the fundamental aspects of these semiconductor materials, including the role of dislocations on tin diffusion during annealing processes and the characteristics of single quantum wells with enhanced emission. His research network includes several key collaborators at the University of Arkansas at Fayetteville, with whom he has co-authored multiple publications in this field. With a total of 25 publications and 7 citations, Amoah is an active researcher in the field of semiconductor devices.

Metrics

  • h-index: 7
  • Publications: 25
  • Citations: 389

Selected Publications

  • Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025) DOI
  • Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024) DOI
  • Electrically Injected GeSn Laser Operating up to 135 K (2024) DOI
  • Effects of ion implantation with arsenic and boron in germanium-tin layers (2024) DOI
  • Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023) DOI
  • Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023) DOI
  • Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022) DOI
  • Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE) (2022) DOI
  • Silicon-based electrically injected GeSn lasers (2022) DOI
  • Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021) DOI
  • Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021) DOI
  • Electrically injected GeSn lasers with peak wavelength up to 2.7  μm (2021) DOI
  • Electrically Injected GeSn Laser on Si Operating up to 110K (2021) DOI

Collaborators

Researchers in the database who share publications

Wei Du University of Arkansas at Fayetteville 12 shared publications Shui-Qing Yu University of Arkansas at Fayetteville 10 shared publications Solomon Ojo University of Arkansas at Fayetteville 9 shared publications Sudip Acharya University of Arkansas at Fayetteville 9 shared publications Hryhorii Stanchu University of Arkansas at Fayetteville 8 shared publications Justin Rudie University of Arkansas at Fayetteville 6 shared publications Oluwatobi Olorunsola University of Arkansas at Fayetteville 5 shared publications Yiyin Zhou University of Arkansas at Fayetteville 5 shared publications

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