S
Sylvester Amoah Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
7 h-index
28 pubs
414 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Sylvester Amoah's research focuses on the development and characterization of semiconductor materials and devices, particularly those based on germanium and tin alloys for photonic applications. His work investigates the growth of pseudomorphic GeSn layers, including compositions up to 16.7% Sn, using molecular beam epitaxy (MBE) at low pressures. He has explored the integration of these materials onto silicon photonics platforms, aiming for applications in integrated circuits and infrared detection. His publications include studies on electrically injected GeSn lasers emitting at wavelengths up to 2.7 μm and the development of monolithic Germanium–Tin on Si Avalanche Photodiodes. Amoah also examines the fundamental properties of these materials, such as the role of dislocations on Sn diffusion during annealing and the growth of single crystalline Ge thin films on sapphire substrates. He has a h-index of 7 and 391 total citations across 25 publications.
Metrics
- h-index: 7
- Publications: 28
- Citations: 414
Selected Publications
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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
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Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)
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Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024)
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Electrically Injected GeSn Laser Operating up to 135 K (2024)
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Effects of ion implantation with arsenic and boron in germanium-tin layers (2024)
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Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)
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Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023)
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Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022)
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Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE) (2022)
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Silicon-based electrically injected GeSn lasers (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
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Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
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Electrically Injected GeSn Laser on Si Operating up to 110K (2021)
Collaboration Network
Top Collaborators
Shui-Qing Yu
18 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
Showing 5 of 18 shared publications
Wei Du
14 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Showing 5 of 14 shared publications
Grey Abernathy
11 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Showing 5 of 11 shared publications
Solomon Ojo
9 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
Showing 5 of 9 shared publications
Gregory J. Salamo
9 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
Showing 5 of 9 shared publications
Sudip Acharya
9 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Silicon-based electrically injected GeSn lasers
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Depth-Dependent Photoluminescence Characteristic of Gesn/Sigesn Multi-Quantum Wells
Showing 5 of 9 shared publications
Hryhorii Stanchu
8 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Showing 5 of 8 shared publications
Baohua Li
7 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Silicon-based electrically injected GeSn lasers
- Electrically Injected GeSn Laser on Si Operating up to 110K
- Monolithic Germanium Tin on Si Avalanche Photodiodes
Showing 5 of 7 shared publications
Jifeng Liu
6 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Showing 5 of 6 shared publications
Justin Rudie
6 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Showing 5 of 6 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
5 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
- Electrically Injected GeSn Laser on Si Operating up to 110K
- Electrically Injected GeSn Laser Operating up to 135 K
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
5 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Perry C. Grant
5 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Abdulla Said
University of Arkansas at Fayetteville
5 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Depth-Dependent Photoluminescence Characteristic of Gesn/Sigesn Multi-Quantum Wells
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Joshua M. Grant
University of Arkansas at Fayetteville
4 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
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