Quang Minh Thai
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Postdoc researcher
Also affiliated: Commissariat à l'Énergie Atomique et aux Énergies Alternatives (2019); CEA Grenoble (2019); Vietnam Academy of Science and Technology (2026); Université Grenoble Alpes (2019)
Postdoc Researcher
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Quang Minh Thai's research centers on advancements in semiconductor materials and devices, with a particular focus on photonic applications. His work has contributed to the development of germanium-tin (GeSn) microdisk lasers, achieving lasing at room temperature and exploring their growth via chemical vapor deposition. He has also investigated AlGaN/GaN heterostructures for ultraviolet (UV) lasers, including those pumped by electron beams. In parallel, Thai has explored applications in medical imaging, specifically ultrasound-modulated optical tomography, utilizing persistent spectral hole burning filters for in vivo deep tissue imaging. His collaborations include extensive work with Yanqing Qiu, Steven Akwabli, Sudip Acharya, and Hryhorii Stanchu at the University of Arkansas at Fayetteville, with whom he has co-authored multiple publications.
Metrics
- h-index: 2
- Publications: 16
- Citations: 7
Selected Publications
-
Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
-
Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection (2026)
-
Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
-
High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025)
-
Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)
Collaboration Network
Top Collaborators
- High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
- High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
Similar Researchers
Based on overlapping research topics