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Current · Arkansas
Last published
2026
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OpenAlex · ORCID
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2026-08-08
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Nirosh M. Eldose
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Post doctoral research
Also affiliated: Center for NanoScience (2026); Heriot-Watt University (2018–2019); Council of Scientific and Industrial Research (2014); CSIR National Physical Laboratory of India (2014)
Postdoc Researcher
4 h-index
27 pubs
54 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Nirosh M. Eldose's research focuses on the growth and characterization of semiconductor materials for optoelectronic applications. His work has investigated germanium-tin (GeSn) alloys and quantum well structures, exploring their properties for use in integrated photonics platforms. Eldose has published on the growth of pseudomorphic GeSn with high tin composition and the optical and structural characteristics of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics. His research also includes enhancing carrier collection efficiency in GeSn single quantum wells, contributing to the development of all-group-IV photonics. Additionally, Eldose has examined the impact of annealing on the photoluminescence of GeSn alloys and the thermal stability of gallium nitride-based magnetic field sensors. He has a publication record of 27 works, with 53 citations and an h-index of 4. Eldose has collaborated extensively with researchers at the University of Arkansas at Fayetteville, including Oluwatobi Olorunsola, Fernando Maia de Oliveira, Hryhorii Stanchu, and Yuriy I. Mazur.
Metrics
- h-index: 4
- Publications: 27
- Citations: 54
Selected Publications
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures (2023)
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Thermal stability study of gallium nitride based magnetic field sensor (2023)
Collaboration Network
Top Collaborators
Hryhorii Stanchu
University of Arkansas at Fayetteville
15 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 15 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
15 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 15 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
15 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 15 shared publications
Yuriy I. Mazur
Center for NanoScience
12 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Thermal stability study of gallium nitride based magnetic field sensor
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 12 shared publications
Dinesh Baral
Center for NanoScience
11 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Showing 5 of 11 shared publications
Wei Du
University of Arkansas at Fayetteville
9 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Showing 5 of 9 shared publications
Mohammad Zamani‐Alavijeh
Center for NanoScience
9 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Thermal stability study of gallium nitride based magnetic field sensor
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 9 shared publications
Fernando Maia de Oliveira
Center for NanoScience
9 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Showing 5 of 9 shared publications
Diandian Zhang
Center for NanoScience
9 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 9 shared publications
Solomon Ojo
8 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Showing 5 of 8 shared publications
Grey Abernathy
University of Arkansas at Fayetteville (US)
6 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Showing 5 of 6 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Showing 5 of 6 shared publications
Abdulla Said
University of Arkansas at Fayetteville
5 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Joshua M. Grant
University of Arkansas at Fayetteville
5 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Samir K. Saha
University of Arkansas at Fayetteville (US)
5 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
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