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Biography and Research Information
OverviewAI-generated summary
Yanqing Qiu's research focuses on the development and application of advanced materials and catalytic processes. His work includes the synthesis and characterization of novel materials, such as 2D materials, layered double hydroxides, and metamaterials, for applications in electronics, sensing, and energy conversion. Qiu has investigated methods to enhance material properties through doping and structural tuning, contributing to the fields of semiconductor devices and optical sensors.
His research also explores catalytic reactions, including rhodium-catalyzed spirocyclization and the electroreduction of carbon dioxide. Qiu has a publication record of 92 papers, with an h-index of 14 and over 830 citations. He has collaborated with researchers at the University of Arkansas at Fayetteville, including Quang Minh Thai and Steven Akwabli, on multiple shared publications.
Metrics
- h-index: 14
- Publications: 92
- Citations: 830
Selected Publications
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Dual-barrier GeSn quantum-well lasers with operation up to 150 K (2026)
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection (2026)
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High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers (Adv. Electron. Mater. 19/2025) (2025)
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High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers (2025)
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Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)
Collaboration Network
Top Collaborators
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers (Adv. Electron. Mater. 19/2025)
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers (Adv. Electron. Mater. 19/2025)
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers (Adv. Electron. Mater. 19/2025)
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers (Adv. Electron. Mater. 19/2025)
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
- High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers (Adv. Electron. Mater. 19/2025)
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
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