Enbo Yang
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Also affiliated: Shizuoka University (2013–2016); Ministry of Education of the People's Republic of China (2006); Hunan Normal University (2017); Shanghai Jiao Tong University (2026); Fudan University (2004–2006); China Institute of Atomic Energy (2001); Inner Mongolia Autonomous Region Meteorological Bureau (2024); Institute of Modern Physics (2004–2006); Institute of Atomic Energy (1987–2001); Old Dominion University (2018–2019)
Faculty Researcher
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Enbo Yang's research focuses on the chemical vapor deposition (CVD) processes used for growing germanium-tin (GeSn) materials. His work investigates the dynamics and mechanisms governing GeSn growth, employing techniques such as <i>in situ</i> mass spectrometry and optical monitoring systems to achieve real-time analysis. Yang has published research detailing gas-phase reactions and their influence on GeSn growth processes, aiming to optimize material quality for applications like lasing at specific wavelengths. His work contributes to the understanding and advancement of semiconductor material fabrication through detailed process analysis and optimization.
Metrics
- h-index: 7
- Publications: 36
- Citations: 267
Selected Publications
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<i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
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Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes (2025)
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<i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes (2024)
Collaboration Network
Top Collaborators
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
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