Enbo Yang Data-verified
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Biography and Research Information
OverviewAI-generated summary
Enbo Yang's research focuses on the chemical vapor deposition (CVD) processes for germanium-tin (GeSn) materials, aiming to optimize their growth for advanced applications. Yang has investigated the dynamics and mechanisms of GeSn growth using *in situ* mass spectrometry, providing insights into gas-phase reactions critical for material quality. A real-time optical monitoring system has also been developed and applied to optimize GeSn growth. These efforts have contributed to achieving high-quality GeSn materials with demonstrated lasing capabilities at 2250 nm at 100 K.
Yang collaborates with researchers at the University of Arkansas at Fayetteville, including Alexander Golden and Joshua M. Grant, with whom Yang has co-authored multiple publications. Yang's work has resulted in 27 publications and garnered 242 citations, with an h-index of 7. The researcher's most recent publications date to 2025, indicating ongoing activity in the field.
Metrics
- h-index: 7
- Publications: 31
- Citations: 257
Selected Publications
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<i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
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Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes (2025)
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<i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes (2024)
Collaboration Network
Top Collaborators
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Mechanisms of Gas Phase Reactions in Germanium-Tin Chemical Vapor Deposition Processes Determined By in Situ Mass Spectrometric Investigation
- A Real-Time Chemical Vapor Deposition Optical Monitoring System for Ge<sub>1-X</sub>Sn<sub>x</sub> Growth Optimization
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Mechanisms of Gas Phase Reactions in Germanium-Tin Chemical Vapor Deposition Processes Determined By in Situ Mass Spectrometric Investigation
- A Real-Time Chemical Vapor Deposition Optical Monitoring System for Ge<sub>1-X</sub>Sn<sub>x</sub> Growth Optimization
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Mechanisms of Gas Phase Reactions in Germanium-Tin Chemical Vapor Deposition Processes Determined By in Situ Mass Spectrometric Investigation
- A Real-Time Chemical Vapor Deposition Optical Monitoring System for Ge<sub>1-X</sub>Sn<sub>x</sub> Growth Optimization
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Mechanisms of Gas Phase Reactions in Germanium-Tin Chemical Vapor Deposition Processes Determined By in Situ Mass Spectrometric Investigation
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Mechanisms of Gas Phase Reactions in Germanium-Tin Chemical Vapor Deposition Processes Determined By in Situ Mass Spectrometric Investigation
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- <i>In situ</i> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Process design, performance comparison and operating test of the multi-stage vertical absorption heat exchanger realizing independent heating in three zones
- Process design, performance comparison and operating test of the multi-stage vertical absorption heat exchanger realizing independent heating in three zones
- Process design, performance comparison and operating test of the multi-stage vertical absorption heat exchanger realizing independent heating in three zones
- Process design, performance comparison and operating test of the multi-stage vertical absorption heat exchanger realizing independent heating in three zones
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
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