Enbo Yang
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Role not yet determined Is this you? Add your title
Also affiliated: Shizuoka University (2013–2016); Ministry of Education of the People's Republic of China (2006); Fudan University (2004–2006); Old Dominion University (2018–2019)
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Enbo Yang's research investigates the application of nanosecond pulse stimulation for modulating cellular responses, particularly in the context of cancer treatment. His work has explored the use of high-voltage, multiphasic, nanosecond pulses to affect cells, and has examined how moderate heat application can enhance the efficacy of these nanosecond pulse stimulations for treating squamous cell carcinoma. Yang also has experience in nanotechnology, specifically in the fabrication and functionalization of gold nanoparticles encapsulated in graphite. His research network includes collaborators such as Alexander Golden and Joshua M. Grant at the University of Arkansas at Fayetteville, with whom he has co-authored multiple publications. Yang's scholarly output is reflected in his h-index of 7 and over 260 citations across 37 publications, with his most recent work dating to 2024.
Metrics
- h-index: 6
- Publications: 22
- Citations: 151
Selected Publications
-
Dual-barrier GeSn quantum-well lasers with operation up to 150 K (2026)
-
In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
-
Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes (2025)
-
In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes (2024)
Collaboration Network
Top Collaborators
- In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
- Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes
- In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
Similar Researchers
Based on overlapping research topics