Eric Allee
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Also affiliated: Arkansas Power Electronics International (2026)
Unknown Researcher
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Eric Allee's research focuses on power electronics, particularly involving silicon carbide (SiC) semiconductor devices for high-power applications. His work has explored the electrothermal co-design of dual inverters for heavy-duty traction systems and the use of high-density, high-power converters built with all-silicon carbide modules. Allee has investigated the impact of gate bias on SiC MOSFETs under varying temperature conditions and developed empirical pre-screening methods for paralleling medium-voltage SiC MOSFETs. His recent publications include studies on 6.5-kV SiC MOSFETs, 3.3-kV SiC modules, and inverter designs for traction applications. Allee collaborates with researchers at the University of Arkansas at Fayetteville, including Yue Zhao and Ahmed H. Ismail, with whom he has co-authored multiple publications.
Metrics
- h-index: 3
- Publications: 5
- Citations: 37
Selected Publications
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Empirical Pre-Screen Method for Paralleling Operation of Medium-Voltage Silicon Carbide MOSFETs (2026)
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Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range (2024)
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High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules (2023)
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Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications (2021)
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An Optimized Silicon Carbide based 2×250 kW Dual Inverter for Traction Applications (2020)
Collaboration Network
Top Collaborators
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
- Empirical Pre-Screen Method for Paralleling Operation of Medium-Voltage Silicon Carbide MOSFETs
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
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