Tanzila Akter
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
graduate student
Also affiliated: Military Institute of Science and Technology (2021)
Research Areas
Biography and Research Information
OverviewAI-generated summary
Tanzila Akter's research focuses on the design and analysis of power electronic devices and modules, particularly those utilizing Gallium Nitride (GaN) and Gallium Oxide (Ga2O3) semiconductor materials. Her work includes the design of low parasitic inductance GaN HEMT flip-chip power modules and the development of compact models for Ga2O3 Schottky barrier diodes. Akter has also investigated the thermal analysis and modeling of Ga2O3 diode-based half-bridge power modules and evaluated the bonding strength of die attachment techniques for these devices. Her publications also extend to areas such as MIMO-STBC systems, phytochemicals from anti-diabetic medicinal plants, and the antibiotic sensitivity patterns of Streptococcus mutans. She has co-authored several publications with researchers at the University of Arkansas at Fayetteville, including Mohammad Dehan Rahman, Abu Shahir Md Khalid Hasan, Xiaoqing Song, and Kevin Chen.
Metrics
- h-index: 2
- Publications: 6
- Citations: 13
Positions
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graduate student publications 2024–2025University of Arkansas at Fayetteville Institution web page
Selected Publications
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Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout (2025)
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Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module (2025)
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Compact Model of β-Ga2O3 Schottky Barrier Diode (2025)
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Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module (2025)
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Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices (2024)
Collaboration Network
Top Collaborators
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
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