Zhuowen Feng Data-verified

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

Last publication 2026 Last refreshed 2026-05-16

faculty

4 h-index 11 pubs 61 cited

Biography and Research Information

OverviewAI-generated summary

Zhuowen Feng is pursuing a Ph.D. in electrical engineering at the University of Arkansas, Fayetteville. His research focuses on wide bandgap semiconductor devices and power electronics, particularly silicon carbide (SiC) power MOSFETs and resonant converters designed for solar energy applications. Feng's work also extends to the reliability of power modules in demanding conditions and the optimization of lithography patterning on SiC wafers using electron beam technology. He has contributed to several publications exploring SiC CMOS technology for harsh environments and simulation methods for assessing temperature and radiation effects on SiC resonant-converter reliability. Feng collaborates with researchers at the University of Arkansas, including Abu Shahir Md Khalid Hasan, Zhong Chen, and Pengyu Lai, with whom he has co-authored multiple publications.

Metrics

  • h-index: 4
  • Publications: 11
  • Citations: 61

Selected Publications

  • A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2026)
  • A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
  • Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers (2025)
    1 citation DOI OpenAlex
  • A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
  • A review of silicon carbide CMOS technology for harsh environments (2024)
    35 citations DOI OpenAlex

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Collaboration Network

65 Collaborators 20 Institutions 4 Countries

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