Zhuowen Feng Source Confirmed
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
University of Arkansas at Fayetteville
faculty
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Biography and Research Information
OverviewAI-generated summary
Zhuowen Feng's research focuses on power electronics, particularly wide bandgap semiconductor devices and their applications in solar energy conversion. His work investigates 1.2 kV Silicon Carbide (SiC) power MOSFETs and resonant converters designed for solar applications, as well as ultrafast power module applications. Feng has explored the use of electron beam lithography to optimize patterning on SiC wafers and developed simulation methods to assess the effects of temperature and radiation on SiC resonant-converter reliability. His doctoral research is conducted at the University of Arkansas, Fayetteville. Feng holds B.S. and M.S. degrees in electrical engineering from Jilin University and George Mason University, respectively.
Metrics
- h-index: 3
- Publications: 11
- Citations: 47
Selected Publications
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2026) DOI
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025) DOI
- Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers (2025) DOI
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025) DOI
- A review of silicon carbide CMOS technology for harsh environments (2024) DOI
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