Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
Z
Zhuowen Feng
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
Also affiliated: University of Arkansas System (2025); Zhuhai Hospital of Integrated Traditional Chinese and Western Medicine (2026); China Jiliang University (2025); Guangdong Ocean University (2023–2026)
Faculty Researcher
4 h-index
12 pubs
67 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Zhuowen Feng's research focuses on power electronics, particularly wide bandgap semiconductor devices and their applications in renewable energy systems. His work investigates 1.2 kV Silicon Carbide (SiC) power MOSFETs and their use in resonant converters designed for solar energy applications. Feng also explores the utilization of ultrafast power modules and has studied the optimization of SiC wafer patterning through E-beam lithography. His research interests extend to power electronics for harsh environments and the characterization of materials for organic electronic applications. Feng is pursuing a Ph.D. in electrical engineering at the University of Arkansas, Fayetteville, where he collaborates with faculty members including Pengyu Lai and Zhong Chen.
Metrics
- h-index: 4
- Publications: 12
- Citations: 67
Selected Publications
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An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules (2026)
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A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2026)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers (2025)
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A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
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A review of silicon carbide CMOS technology for harsh environments (2024)
Collaboration Network
Top Collaborators
Pengyu Lai
University of Arkansas at Fayetteville
5 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
- An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules
Zhong Chen
University of Arkansas at Fayetteville
3 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers
H. Alan Mantooth
University of Arkansas System
3 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
Sudharsan Chinnaiyan
University of Arkansas at Fayetteville
3 shared publications
In database
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules
Abu Shahir Md Khalid Hasan
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
Hui Wang
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Md Zahidul Islam
University of Arkansas at Fayetteville (US)
1 shared publication
- A review of silicon carbide CMOS technology for harsh environments
Anthony Di Mauro
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Nur-E-Afra Anika
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Robert D. Russell
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Kevin Chen
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Asif Faruque
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Thomas P. White
University of Arkansas at Fayetteville (US)
1 shared publication
- A review of silicon carbide CMOS technology for harsh environments
Salahaldein Ahmed
University of Arkansas at Fayetteville
1 shared publication
In database
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Shui-Qing Yu
University of Arkansas at Fayetteville
1 shared publication
In database
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
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