Zhuowen Feng
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Also affiliated: China Jiliang University (2025); Guangdong Ocean University (2023–2026)
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Zhuowen Feng's research interests lie in the field of electrical engineering, with a particular focus on power electronics and semiconductor devices. His work includes investigations into 1.2 kV Silicon Carbide (SiC) power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and the application of wide bandgap semiconductors in resonant converters designed for solar energy systems. Feng has also explored ultrafast power module applications. His academic background includes a B.S. from Jilin University and an M.S. in electrical engineering from George Mason University, and he is currently pursuing a Ph.D. at the University of Arkansas. His scholarly output includes publications on SiC CMOS technology for demanding environments, organic electronic applications, and autonomous exploration for unmanned aerial vehicles. Feng has a productive collaboration network at the University of Arkansas, with multiple shared publications with researchers including Pengyu Lai and Zuhuang Chen.
Metrics
- h-index: 4
- Publications: 11
- Citations: 74
Selected Publications
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An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules (2026)
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A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2026)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2025)
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Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers (2025)
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A 200 ∘C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
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A review of silicon carbide CMOS technology for harsh environments (2024)
Collaboration Network
Top Collaborators
- A review of silicon carbide CMOS technology for harsh environments
- A 200 ∘C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
Showing 5 of 6 shared publications
- A review of silicon carbide CMOS technology for harsh environments
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
- A review of silicon carbide CMOS technology for harsh environments
- Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers
- A 200 ∘C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A review of silicon carbide CMOS technology for harsh environments
- A 200 ∘C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- A 200 ∘C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
- A review of silicon carbide CMOS technology for harsh environments
- A review of silicon carbide CMOS technology for harsh environments
- A review of silicon carbide CMOS technology for harsh environments
- A review of silicon carbide CMOS technology for harsh environments
- A review of silicon carbide CMOS technology for harsh environments
- A review of silicon carbide CMOS technology for harsh environments
- A review of silicon carbide CMOS technology for harsh environments
- A review of silicon carbide CMOS technology for harsh environments
- A 200 ∘C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
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