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Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-07
A
Ayesha Hassan
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Also affiliated: Karachi Institute of Economics and Technology (2017–2020); Government Sadiq College Women University (2025); Fatima Jinnah Women University (2023)
7 h-index
21 pubs
93 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Ayesha Hassan's research centers on the development and characterization of advanced semiconductor devices and sensor interfaces. Her recent publications include work on double-sided cooled power modules with embedded decoupling capacitors and heterogeneously integrated silicon carbide power modules. Hassan has also investigated current sensing interfaces for Hall-effect sensors, focusing on bandwidth and interface circuit design for power electronics applications. Her work includes studies on the temperature, sensitivity, and frequency response of aluminum nitride/gallium nitride (AlN/GaN) heterostructure micro-Hall effect sensors, as well as the thermal stability of gallium nitride-based magnetic field sensors. Additionally, Hassan has explored machine learning applications for improving health diagnoses, specifically in the context of thyroid disorder diagnosis. She has a notable publication record, with 19 total publications and 79 citations, and an h-index of 7. Hassan collaborates with several researchers at the University of Arkansas at Fayetteville, including K. Asif Faruque, Satish Shetty, Gregory J. Salamo, and Asma Mahar.
Metrics
- h-index: 7
- Publications: 21
- Citations: 93
Selected Publications
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Notch filter based Readout Interface for Hall-effect sensors for DC and High-Frequency Currents (2025)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor (2024)
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A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor (2024)
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A Double-Sided Cooled Power Module With Embedded Decoupling Capacitors (2024)
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Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module (2023)
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Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module (2023)
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Thermal stability study of gallium nitride based magnetic field sensor (2023)
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An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor (2023)
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A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications (2022)
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High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications (2022)
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A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module (2022)
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A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors (2022)
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Wireless Sensor Node Platform for In-Plant Stress Monitoring (2020)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
14 shared publications
In database
- A Double-Sided Cooled Power Module With Embedded Decoupling Capacitors
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
Showing 5 of 14 shared publications
Asma Mahar
University of Arkansas at Fayetteville
7 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- Wireless Sensor Node Platform for In-Plant Stress Monitoring
- A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications
- High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications
Showing 5 of 7 shared publications
Satish Shetty
University of Arkansas at Fayetteville
6 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Showing 5 of 6 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
5 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Debbie G. Senesky
Vaughn College of Aeronautics and Technology (US)
5 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
Riya Paul
University of Arkansas at Fayetteville (US)
4 shared publications
- A Double-Sided Cooled Power Module With Embedded Decoupling Capacitors
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
- Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module
Asif Faruque
University of Arkansas at Fayetteville
4 shared publications
In database
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
- Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module
- Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module
Savannah R. Eisner
Columbia University (US)
4 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
Robert Murphree
University of Arkansas at Fayetteville
3 shared publications
In database
- Wireless Sensor Node Platform for In-Plant Stress Monitoring
- A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
K. Asif Faruque
University of Arkansas at Fayetteville
3 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications
Yuriy I. Mazur
University of Arkansas at Fayetteville
3 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Anand Vikas Lalwani
Vaughn College of Aeronautics and Technology (US)
3 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
Jeffrey De La Rosa Garcia
University of North Carolina at Charlotte (US)
2 shared publications
- A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
Babak Parkhideh
University of North Carolina at Charlotte (US)
2 shared publications
- A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
2 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
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