A
Ayesha Hassan Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
7 h-index
20 pubs
78 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Ayesha Hassan's research interests include the development and characterization of semiconductor devices, particularly those based on gallium nitride (GaN) and silicon carbide (SiC). Her work focuses on power modules, including double-sided cooling designs and heterogeneously integrated components. Hassan also investigates Hall-effect sensors for current sensing applications, studying their temperature, sensitivity, and frequency response, and developing interface circuits for high bandwidth operation.
Her publications also extend to the application of ensemble learning models for improving diagnostic accuracy in health-related contexts, specifically in thyroid disorder diagnosis. Hassan collaborates with researchers at the University of Arkansas at Fayetteville, including K. Asif Faruque, Asma Mahar, Satish Shetty, and Yuriy I. Mazur, with whom she has co-authored multiple publications. Her scholarly output includes 20 publications and 75 citations, with an h-index of 6.
Metrics
- h-index: 7
- Publications: 20
- Citations: 78
Selected Publications
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Notch filter based Readout Interface for Hall-effect sensors for DC and High-Frequency Currents (2025)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor (2024)
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A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor (2024)
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A Double-Sided Cooled Power Module With Embedded Decoupling Capacitors (2024)
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Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module (2023)
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Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module (2023)
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Thermal stability study of gallium nitride based magnetic field sensor (2023)
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An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor (2023)
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A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications (2022)
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High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications (2022)
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A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module (2022)
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A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors (2022)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
13 shared publications
In database
- A Double-Sided Cooled Power Module With Embedded Decoupling Capacitors
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
Showing 5 of 13 shared publications
Asma Mahar
University of Arkansas at Fayetteville
6 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications
- High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
Showing 5 of 6 shared publications
Satish Shetty
University of Arkansas at Fayetteville
5 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Gregory J. Salamo
University of Arkansas at Fayetteville
5 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Riya Paul
University of Arkansas at Fayetteville (US)
4 shared publications
- A Double-Sided Cooled Power Module With Embedded Decoupling Capacitors
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
- Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module
Asif Faruque
University of Arkansas at Fayetteville (US)
4 shared publications
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
- Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module
- Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module
Debbie G. Senesky
Stanford University (US)
4 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
K. Asif Faruque
University of Arkansas at Fayetteville (US)
3 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications
Savannah R. Eisner
Columbia University (US)
3 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Yuriy I. Mazur
University of Arkansas at Fayetteville
3 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Robert Murphree
University of Arkansas at Fayetteville (US)
2 shared publications
- A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
Jeffrey De La Rosa Garcia
2 shared publications
- A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
Babak Parkhideh
2 shared publications
- A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
Shui-Qing Yu
University of Arkansas at Fayetteville (US)
2 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
2 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
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