M
Mohammad Zamani‐Alavijeh Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
7 h-index
22 pubs
105 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Mohammad Zamani‐Alavijeh's research focuses on semiconductor materials and devices, particularly in the areas of optoelectronics and infrared applications. His work has investigated the optical and structural properties of GeSn/SiGeSn multiple quantum wells, contributing to the development of devices for infrared technologies. He has also studied heterojunctions like β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub>, examining their band offsets. Zamani‐Alavijeh's publications include research on the growth of germanium and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs substrates using molecular beam epitaxy. He has also explored thermal stability in gallium nitride-based magnetic field sensors and the role of dislocations in Sn diffusion in GeSn layers. Additionally, his research has involved modeling the nonlinear optical properties of nickel nano-films and investigating the temperature dependence of InGaN solar cells.
Metrics
- h-index: 7
- Publications: 22
- Citations: 105
Selected Publications
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024)
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The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Thermal stability study of gallium nitride based magnetic field sensor (2023)
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Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)
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Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022)
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Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction (2022)
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The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope (2022)
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Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022)
Collaboration Network
Top Collaborators
Gregory J. Salamo
15 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope
Showing 5 of 15 shared publications
Yuriy I. Mazur
14 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Showing 5 of 14 shared publications
Fernando Maia de Oliveira
11 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 11 shared publications
Shui-Qing Yu
10 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 10 shared publications
Hryhorii Stanchu
8 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 8 shared publications
Nirosh M. Eldose
7 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Showing 5 of 7 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville (US)
6 shared publications
- Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction
- Thermal stability study of gallium nitride based magnetic field sensor
- The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Polarization Domain Dynamics of Barium Titanate Ultrathin Films Using Piezoresponse Force Microscopy.
Showing 5 of 6 shared publications
Emmanuel Wangila
University of Arkansas at Fayetteville
6 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 6 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
6 shared publications
In database
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
Showing 5 of 6 shared publications
Calbi Gunder
University of Arkansas at Fayetteville
5 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
Dinesh Baral
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Neutralizing Optical Defects in GeSn
Morgan E. Ware
Center for Nanoscale Science and Technology
4 shared publications
In database
- Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Malak Refaei
University of Arkansas at Fayetteville (US)
3 shared publications
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Mirsaeid Sarollahi
University of Arkansas at Fayetteville (US)
3 shared publications
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Reem Alhelais
University of Arkansas at Fayetteville
3 shared publications
In database
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
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