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Current · Arkansas
Last published
2026
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OpenAlex · ORCID
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2026-10-06
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Satish Shetty
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Also affiliated: Jawaharlal Nehru Centre for Advanced Scientific Research (2009–2016)
8 h-index
32 pubs
294 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Satish Shetty's research focuses on semiconductor materials and devices, with a particular emphasis on gallium nitride (GaN) based nanostructures and heterostructures. His work investigates the spontaneous formation of GaN nanostructures on various substrates, including sapphire and silicon, exploring the underlying mechanisms for their shape, orientation, and structure. Shetty has also studied the application of AlGaN/GaN heterostructures in micro-Hall effect devices for simultaneous current and temperature measurements. His research interests extend to the synthesis of nanocrystalline materials, such as CeAlO3, using solution-combustion routes, and the development of nanocomposites for biomedical and environmental applications. He has published 34 papers, accumulating 295 citations, and holds an h-index of 8. Shetty has collaborated extensively with Gregory J. Salamo, Yuriy I. Mazur, Ayesha Hassan, and Fernando Maia de Oliveira at the University of Arkansas at Fayetteville.
Metrics
- h-index: 8
- Publications: 32
- Citations: 294
Selected Publications
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor (2024)
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A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor (2024)
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Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors (2024)
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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures (2023)
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Thermal stability study of gallium nitride based magnetic field sensor (2023)
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A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors (2022)
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High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors (2022)
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Degradation of Gallium Nitride-Based Hall-Effect Sensors in High Temperature Environments (2020)
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High temperature capacitors using AlN grown by MBE as the dielectric (2018)
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Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures (2018)
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AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents (2018)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
13 shared publications
In database
- AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
Showing 5 of 13 shared publications
H. Alan Mantooth
University of Arkansas at Fayetteville
10 shared publications
In database
- AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
Showing 5 of 10 shared publications
Debbie G. Senesky
Vaughn College of Aeronautics and Technology (US)
8 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
- Degradation of Gallium Nitride-Based Hall-Effect Sensors in High Temperature Environments
Showing 5 of 8 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
7 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
Showing 5 of 7 shared publications
Ayesha Hassan
University of Arkansas at Fayetteville
5 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Savannah R. Eisner
Columbia University (US)
5 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Morgan E. Ware
University of Arkansas at Fayetteville
4 shared publications
In database
- AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents
- High temperature capacitors using AlN grown by MBE as the dielectric
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
Chen Li
University of Arkansas at Fayetteville
4 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- High temperature capacitors using AlN grown by MBE as the dielectric
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
David Huitink
University of Arkansas at Fayetteville
4 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
- Degradation of Gallium Nitride-Based Hall-Effect Sensors in High Temperature Environments
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
4 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Nirosh M. Eldose
University of Arkansas at Fayetteville
4 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Thermal stability study of gallium nitride based magnetic field sensor
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Anand Vikas Lalwani
Vaughn College of Aeronautics and Technology (US)
4 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Dinesh Baral
University of Arkansas at Fayetteville
4 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Thomas P. White
University of Arkansas at Fayetteville (US)
3 shared publications
- AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents
- High temperature capacitors using AlN grown by MBE as the dielectric
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
Alexis Krone
University of Arkansas at Fayetteville
3 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
- Degradation of Gallium Nitride-Based Hall-Effect Sensors in High Temperature Environments
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