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Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
S
Satish Shetty
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
Also affiliated: Jawaharlal Nehru Centre for Advanced Scientific Research (2009–2016)
Faculty Researcher
8 h-index
32 pubs
291 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Satish Shetty's research focuses on the development and characterization of semiconductor materials and devices, particularly those based on gallium nitride (GaN) and related heterostructures. His work investigates the performance characteristics of Hall-effect sensors, including their temperature, sensitivity, and frequency response. Shetty has explored degradation modes in GaN-based Hall-effect sensors and examined strain-mediated phenomena in compositionally graded GeSn epilayers. He has also contributed to the design of interface circuits for current sensing and high bandwidth Hall sensors.
His research is supported by collaborations with other faculty at the University of Arkansas at Fayetteville, including Gregory J. Salamo, Yuriy I. Mazur, Ayesha Hassan, and Oluwatobi Olorunsola. Shetty has published 31 papers, accumulating 289 citations and an h-index of 8. His recent work continues to explore advancements in sensor technology and materials science.
Metrics
- h-index: 8
- Publications: 32
- Citations: 291
Selected Publications
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor (2024)
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A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor (2024)
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Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors (2024)
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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures (2023)
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Thermal stability study of gallium nitride based magnetic field sensor (2023)
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A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors (2022)
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High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors (2022)
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Degradation of Gallium Nitride-Based Hall-Effect Sensors in High Temperature Environments (2020)
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High temperature capacitors using AlN grown by MBE as the dielectric (2018)
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Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures (2018)
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AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents (2018)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
9 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
Showing 5 of 9 shared publications
H. Alan Mantooth
University of Arkansas at Fayetteville
9 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
Showing 5 of 9 shared publications
Debbie G. Senesky
Vaughn College of Aeronautics and Technology (US)
7 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Showing 5 of 7 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
6 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Showing 5 of 6 shared publications
Ayesha Hassan
University of Arkansas at Fayetteville
5 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Savannah R. Eisner
Columbia University (US)
5 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
4 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Nirosh M. Eldose
University of Arkansas at Fayetteville
4 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Thermal stability study of gallium nitride based magnetic field sensor
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Anand Vikas Lalwani
Vaughn College of Aeronautics and Technology (US)
4 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Dinesh Baral
University of Arkansas at Fayetteville
4 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
David Huitink
University of Arkansas at Fayetteville
3 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
3 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Alexis Krone
University of Arkansas at Fayetteville
2 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
Asma Mahar
University of Arkansas at Fayetteville
2 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
K. Asif Faruque
University of Arkansas at Fayetteville
2 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
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