S
Satish Shetty Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
8 h-index
31 pubs
286 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Satish Shetty's research focuses on the development and characterization of semiconductor-based sensor devices, particularly those utilizing gallium nitride (GaN) and related heterostructures. His work has explored the temperature, sensitivity, and frequency response of micro-Hall effect sensors, including those based on AlN/GaN/AlN quantum wells. Shetty has investigated degradation modes in GaN-based Hall-effect sensors under high-temperature conditions and has contributed to the design of interface circuits for high-bandwidth sensors. His publications also touch upon the synthesis of nanocomposites for biomedical and environmental applications, and the strain-mediated incorporation of elements in germanium-tin epilayers. He has a consistent publication record with 33 total publications and a h-index of 8, with citations totaling 292. Shetty collaborates with several researchers at the University of Arkansas at Fayetteville, including Yuriy I. Mazur, Ayesha Hassan, Oluwatobi Olorunsola, and Fernando Maia de Oliveira.
Metrics
- h-index: 8
- Publications: 31
- Citations: 286
Selected Publications
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor (2024)
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A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor (2024)
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Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors (2024)
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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures (2023)
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Thermal stability study of gallium nitride based magnetic field sensor (2023)
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A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors (2022)
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High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors (2022)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
11 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 11 shared publications
Debbie G. Senesky
Vaughn College of Aeronautics and Technology (US)
8 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
- Experimental investigation on the effect of temperature on the frequency limit of GaAs-AlGaAs and AlGaN-GaN 2DEG Hall-effect sensors
Showing 5 of 8 shared publications
H. Alan Mantooth
University of Arkansas at Fayetteville
7 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
Showing 5 of 7 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
6 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Showing 5 of 6 shared publications
Ayesha Hassan
University of Arkansas at Fayetteville
5 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Savannah R. Eisner
Columbia University (US)
5 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Anand Vikas Lalwani
Vaughn College of Aeronautics and Technology (US)
5 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Experimental investigation on the effect of temperature on the frequency limit of GaAs-AlGaAs and AlGaN-GaN 2DEG Hall-effect sensors
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
David Huitink
University of Arkansas at Fayetteville
4 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Degradation of Gallium Nitride-Based Hall Effect Sensors in High Temperature Environments
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
4 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Nirosh M. Eldose
University of Arkansas at Fayetteville (US)
4 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Dinesh Baral
University of Arkansas at Fayetteville
4 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Alexis Krone
University of Arkansas at Fayetteville
3 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
- Degradation of Gallium Nitride-Based Hall Effect Sensors in High Temperature Environments
Shui-Qing Yu
University of Arkansas at Fayetteville (US)
3 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
3 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Asma Mahar
University of Arkansas at Fayetteville
2 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
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