E
Eric Allee Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
unknown
3 h-index
4 pubs
36 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Eric Allee's research focuses on power electronics, particularly in the application of silicon carbide (SiC) semiconductor devices for high-power conversion systems. His work includes the co-design of dual inverters for heavy-duty traction applications, investigating the impact of gate bias on SiC MOSFETs across various temperatures, and developing high-density, high-power converters utilizing SiC modules. Allee has collaborated with H. Alan Mantooth, Yue Zhao, Mohammad Hazzaz Mahmud, and Abu Shahir Md Khalid Hasan on shared publications, indicating an active network within the University of Arkansas at Fayetteville. His scholarship metrics include an h-index of 3, with 4 total publications and 35 total citations.
Metrics
- h-index: 3
- Publications: 4
- Citations: 36
Selected Publications
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Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range (2024)
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High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules (2023)
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Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications (2021)
Collaboration Network
Top Collaborators
Yue Zhao
University of Arkansas at Fayetteville
3 shared publications
In database
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
Ashish Kumar
Fayetteville Public Library (US)
2 shared publications
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
K.J. Olejniczak
Fayetteville Public Library (US)
2 shared publications
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
Yuheng Wu
University of Arkansas at Fayetteville (US)
1 shared publication
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
Muhammad Jahidul Hoque
University of Illinois Urbana-Champaign (US)
1 shared publication
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
Mohammad Hazzaz Mahmud
University of Arkansas at Fayetteville
1 shared publication
In database
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
Aniket Ajay Lad
University of Illinois Urbana-Champaign (US)
1 shared publication
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
H. Alan Mantooth
University of Arkansas at Fayetteville
1 shared publication
In database
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
Nenad Miljkovic
University of Illinois Urbana-Champaign (US)
1 shared publication
- Electrothermal-Control Co-Design of an All Silicon Carbide 2×250 kW Dual Inverter for Heavy-Duty Traction Applications
Ahmed H. Ismail
University of Arkansas at Fayetteville
1 shared publication
In database
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
Zhuxuan Ma
University of Arkansas at Fayetteville
1 shared publication
In database
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
Ahmad Al-Hmoud
University of Arkansas at Fayetteville (US)
1 shared publication
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
Feng Guo
University of Arkansas at Fayetteville (US)
1 shared publication
- High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
Xinyuan Du
University of Arkansas at Fayetteville
1 shared publication
In database
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
Ahmed Ismail
University of Arkansas at Fayetteville (US)
1 shared publication
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
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