K. Asif Faruque Data-verified

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

Last publication 2024 Last refreshed 2026-05-16

unknown

3 h-index 9 pubs 48 cited

Biography and Research Information

OverviewAI-generated summary

K. Asif Faruque's research focuses on the design and development of interface circuits for sensors, particularly Hall-effect sensors, and high-temperature electronic components. His work includes developing current sensing interfaces capable of operating at frequencies up to 25 MHz, as well as circuits designed for high bandwidth applications. Faruque has also investigated interface circuits for low-power applications that aim to achieve high gain for Hall sensors. Additionally, his research extends to the assembly and design of negative charge pumps utilizing Silicon Carbide Bipolar Junction Transistors (SiC BJTs) for high-temperature environments.

His scholarly output includes four publications with a total of 16 citations, and he holds an h-index of 2. Faruque has collaborated with researchers at the University of Arkansas at Fayetteville, including Khandoker Asif Faruque, Ayesha Hassan, and Asma Mahar, on multiple shared publications. His most recent publication is from 2024, indicating recent activity in his research area.

Metrics

  • h-index: 3
  • Publications: 9
  • Citations: 48

Selected Publications

  • Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules (2025)
  • Development, Integration, and Flight Testing of a Silicon Carbide Propulsion Drive for a Hybrid Electric Aerospace Application (2025)
  • Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
    3 citations DOI OpenAlex
  • A review of silicon carbide CMOS technology for harsh environments (2024)
    35 citations DOI OpenAlex
  • A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor (2024)
    9 citations DOI OpenAlex
  • Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module (2023)
  • Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module (2023)
  • An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor (2023)
    1 citation DOI OpenAlex
  • High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications (2022)
    1 citation DOI OpenAlex
  • A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module (2022)
    7 citations DOI OpenAlex
  • A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors (2022)
    4 citations DOI OpenAlex
  • High-temperature LTCC assembly and design of SiC BJT-based negative charge pump (2021)
    2 citations DOI OpenAlex

View all publications on OpenAlex →

Collaborators

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