Md Helal Uddin Maruf Data-verified
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Biography and Research Information
OverviewAI-generated summary
Md Helal Uddin Maruf's research focuses on the modeling and characterization of semiconductor materials and devices, particularly within the realm of solar cell technology and quantum dot formation. His work has investigated the temperature dependence of graded InGaN solar cells, examining both strained and relaxed features to understand their impact on efficiency. He has also explored simulations of double-graded InGaN solar cell structures and modeled V-graded In(x)Ga(1-x)N solar cells, comparing strained and relaxed configurations. Additionally, Maruf has studied the effects of varying the number of wells in periodic InGaN graded structures on their optical properties. His research extends to controlling the size and density of InN quantum dots on sapphire substrates through droplet epitaxy. He has also contributed to the design and characterization of high-temperature, optically isolated half-bridge modules.
Metrics
- h-index: 4
- Publications: 13
- Citations: 143
Selected Publications
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Investigating the efficiency of InGaN p-n-p-n homojunction solar cells (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy (2023)
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Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022)
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Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features (2022)
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Study of simulations of double graded InGaN solar cell structures (2022)
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Effects of numbers of wells on optical properties of periodic InGaN graded structure (2021)
Collaboration Network
Top Collaborators
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 8 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
- Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
Showing 5 of 6 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Showing 5 of 6 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
- Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
Showing 5 of 6 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Showing 5 of 6 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
- Investigating the efficiency of InGaN p-n-p-n homojunction solar cells
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
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