Md Helal Uddin Maruf Data-verified

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

Last publication 2025 Last refreshed 2026-05-16

faculty

4 h-index 13 pubs 143 cited

Biography and Research Information

OverviewAI-generated summary

Md Helal Uddin Maruf's research focuses on the modeling and characterization of semiconductor materials and devices, particularly within the realm of solar cell technology and quantum dot formation. His work has investigated the temperature dependence of graded InGaN solar cells, examining both strained and relaxed features to understand their impact on efficiency. He has also explored simulations of double-graded InGaN solar cell structures and modeled V-graded In(x)Ga(1-x)N solar cells, comparing strained and relaxed configurations. Additionally, Maruf has studied the effects of varying the number of wells in periodic InGaN graded structures on their optical properties. His research extends to controlling the size and density of InN quantum dots on sapphire substrates through droplet epitaxy. He has also contributed to the design and characterization of high-temperature, optically isolated half-bridge modules.

Metrics

  • h-index: 4
  • Publications: 13
  • Citations: 143

Selected Publications

  • Investigating the efficiency of InGaN p-n-p-n homojunction solar cells (2025)
  • Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
    1 citation DOI OpenAlex
  • Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy (2023)
    1 citation DOI OpenAlex
  • Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022)
    4 citations DOI OpenAlex
  • Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features (2022)
    2 citations DOI OpenAlex
  • Study of simulations of double graded InGaN solar cell structures (2022)
    4 citations DOI OpenAlex
  • Effects of numbers of wells on optical properties of periodic InGaN graded structure (2021)

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Collaboration Network

23 Collaborators 5 Institutions 3 Countries

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