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Current · Arkansas
Last published
2026
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OpenAlex · ORCID
Refreshed
2026-10-08
R
Rohith Allaparthi
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2 h-index
8 pubs
12 cited
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Rohith Allaparthi's research focuses on the modeling and simulation of advanced solar cell structures, particularly those utilizing Indium Gallium Nitride (InGaN) materials. His work investigates the effects of grading within these structures, comparing strained and relaxed features to understand their impact on device performance. Allaparthi has published studies on double-graded and V-graded InGaN solar cells, as well as research exploring the influence of periodic InGaN graded structures on optical properties.
Further investigations include the controlled formation of Indium Nitride (InN) quantum dots on sapphire substrates via droplet epitaxy. He also studies the self-assembled, strain-free growth of In droplets on Gallium Nitride (GaN) using the same technique. Allaparthi has a h-index of 2 and has co-authored 8 publications, with key collaborators including Morgan E. Ware, Md Helal Uddin Maruf, Reem Alhelais, and Manal A. Aldawsari at the University of Arkansas at Fayetteville.
Metrics
- h-index: 2
- Publications: 8
- Citations: 12
Selected Publications
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Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy (2023)
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Investigating self-assembled strain-free growth of In droplets on GaN using droplet epitaxy (2023)
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Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022)
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Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features (2022)
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Study of simulations of double graded InGaN solar cell structures (2022)
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Effects of numbers of wells on optical properties of periodic InGaN graded structure (2021)
Collaboration Network
Top Collaborators
Malak Refaei
University of Arkansas at Fayetteville (US)
6 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Showing 5 of 6 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
6 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Showing 5 of 6 shared publications
Mirsaeid Sarollahi
University of Arkansas at Fayetteville (US)
5 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
- Investigating self-assembled strain-free growth of In droplets on GaN using droplet epitaxy
Md Helal Uddin Maruf
University of Arkansas at Fayetteville
5 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Reem Alhelais
University of Arkansas at Fayetteville
4 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Manal A. Aldawsari
University of Arkansas at Fayetteville
4 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
2 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Yuriy I. Mazur
Center for Nanoscale Science and Technology
2 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Mohammad Zamani Alavijeh
University of Arkansas at Fayetteville
1 shared publication
In database
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
Mirsaeid Sarollahia
University of Arkansas at Fayetteville
1 shared publication
In database
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
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