Match tier
Likely match
Presence
Current · Arkansas
Last published
2023
Sources
OpenAlex · ORCID
Refreshed
2026-08-08
R
Rohith Allaparthi
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Also affiliated: Center for Nanoscale Science and Technology (2022)
Unknown Researcher
2 h-index
7 pubs
12 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Rohith Allaparthi's research focuses on the modeling and simulation of semiconductor materials, specifically concentrating on InGaN (Indium Gallium Nitride) based solar cells and quantum dots. His work investigates the temperature dependence of these devices, examining both strained and relaxed features within graded InGaN structures. Allaparthi has also explored methods for controlling the size and density of InN (Indium Nitride) quantum dots through droplet epitaxy, including the self-assembled, strain-free growth of In droplets on GaN (Gallium Nitride) substrates. His research has resulted in seven publications, with a notable number of shared publications with collaborators at the University of Arkansas at Fayetteville, including Morgan E. Ware, Md Helal Uddin Maruf, Reem Alhelais, and Manal A. Aldawsari. Allaparthi's scholarship metrics include an h-index of 2 and a total of 11 citations across his 7 publications.
Metrics
- h-index: 2
- Publications: 7
- Citations: 12
Selected Publications
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Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy (2023)
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Investigating self-assembled strain-free growth of In droplets on GaN using droplet epitaxy (2023)
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Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022)
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Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features (2022)
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Study of simulations of double graded InGaN solar cell structures (2022)
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Effects of numbers of wells on optical properties of periodic InGaN graded structure (2021)
Collaboration Network
Top Collaborators
Malak Refaei
University of Arkansas at Fayetteville (US)
6 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Showing 5 of 6 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
6 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Showing 5 of 6 shared publications
Mirsaeid Sarollahi
University of Arkansas at Fayetteville (US)
5 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
- Investigating self-assembled strain-free growth of In droplets on GaN using droplet epitaxy
Md Helal Uddin Maruf
University of Arkansas at Fayetteville
5 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Reem Alhelais
University of Arkansas at Fayetteville
4 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Manal A. Aldawsari
University of Arkansas at Fayetteville
4 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
2 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Yuriy I. Mazur
Center for Nanoscale Science and Technology
2 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Mohammad Zamani Alavijeh
University of Arkansas at Fayetteville
1 shared publication
In database
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
Mirsaeid Sarollahia
University of Arkansas at Fayetteville
1 shared publication
In database
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
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