Mohammad Zamani Alavijeh Data-verified
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Researcher
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Research Areas
Biography and Research Information
OverviewAI-generated summary
Mohammad Zamani Alavijeh's research focuses on the growth and modeling of semiconductor thin films, particularly those utilized in solar cell technology. His work includes the molecular beam epitaxy (MBE) growth of germanium (Ge) thin films on sapphire substrates and the algorithmic development of lineally graded compositions of GeSn on GaAs (001) via MBE. He has also investigated the efficiency and modeling of indium gallium nitride (InGaN) based solar cells, comparing strained and relaxed features in various configurations, including p-n-p-n homojunctions.
Alavijeh has published six papers with a total of 30 citations and an h-index of 2. He has collaborated with several researchers from the University of Arkansas at Fayetteville, including Reem Alhelais, Morgan E. Ware, Md Helal Uddin Maruf, and Rohith Allaparthi, with shared publications indicating active research partnerships.
Metrics
- h-index: 2
- Publications: 6
- Citations: 30
Selected Publications
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Investigating the efficiency of InGaN p-n-p-n homojunction solar cells (2025)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2023)
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Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features (2022)
Collaboration Network
Top Collaborators
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
- Investigating the efficiency of InGaN p-n-p-n homojunction solar cells
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
- Investigating the efficiency of InGaN p-n-p-n homojunction solar cells
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
- Investigating the efficiency of InGaN p-n-p-n homojunction solar cells
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
- Investigating the efficiency of InGaN p-n-p-n homojunction solar cells
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
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