Match tier
Likely match
Presence
Current · Arkansas
Last published
2024
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
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Yiyin Zhou
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Research Assistant
Also affiliated: Dartmouth College (2018); Nanjing Normal University (2000); Wilkes University (2014–2022); University of Alabama (2018); University of Massachusetts Boston (2014–2018)
18 h-index
70 pubs
1,936 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Yiyin Zhou's research focuses on the development and study of semiconductor lasers, particularly those based on Germanium-Tin (GeSn) alloys. Their work investigates the performance characteristics of electrically injected GeSn lasers, with a recent emphasis on achieving longer peak wavelengths, extending up to 2.7 μm. This research involves exploring different quantum well structures, such as SiGeSn/GeSn/SiGeSn single quantum wells, to enhance emission properties. Zhou also examines the impact of specific structural components, like the cap layer, on the overall performance of multiple quantum well lasers. This work has led to the demonstration of electrically injected GeSn lasers operating at various temperatures, including up to 110K and 135K.
In addition to laser research, Zhou is involved in additive manufacturing, specifically through a National Science Foundation (NSF) I-Corps grant focused on microheater array powder sintering technology. This project aims to develop advancements in powder sintering for additive manufacturing applications. Zhou has a publication record of 72 papers, with 1,873 citations, and an h-index of 18. Key collaborators include Wei Du, Solomon Ojo, Shui-Qing Yu, and Sylvester Amoah, all from the University of Arkansas at Fayetteville, with whom Zhou has co-authored multiple publications.
Metrics
- h-index: 18
- Publications: 70
- Citations: 1,936
Positions
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Research Assistant 2018–presentUniversity of Arkansas Fayetteville Electrical Engineering ORCID
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Device Engineer 2017–2018Arktonics LLC. ORCID
Selected Publications
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Electrically Injected GeSn Laser Operating up to 135 K (2024)
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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023)
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Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023)
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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022)
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Silicon-based electrically injected GeSn lasers (2022)
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Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
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Electrically Injected GeSn Laser on Si Operating up to 110K (2021)
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Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon (2020)
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Study of gain for SiGeSn/GeSn/SiGeSn multiple quantum well lasers (2020)
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Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si (2020)
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Electrically injected GeSn lasers on Si operating up to 100 K (2020)
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Electrically injected GeSn lasers on Si operating up to 100 K (2020)
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Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration (2019)
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Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration (2019)
Federal Grants 1 $50,000 total
NSF
PI
Apr 2021 - Sep 2022
I-Corps: Microheater Array Powder Sintering Technology for Additive Manufacturing
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
52 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 52 shared publications
Wei Du
Wilkes University
50 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 50 shared publications
Joe Margetis
45 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 45 shared publications
John Tolle
45 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 45 shared publications
Greg Sun
University of Massachusetts Boston (US)
39 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 39 shared publications
Richard Soref
University of Massachusetts Boston (US)
39 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 39 shared publications
Seyed Amir Ghetmiri
University of Arkansas at Fayetteville
32 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
Showing 5 of 32 shared publications
Baohua Li
32 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
Showing 5 of 32 shared publications
Mansour Mortazavi
University of Arkansas at Pine Bluff
32 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 32 shared publications
Wei Dou
University of Arkansas at Fayetteville (US)
25 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 25 shared publications
Aboozar Mosleh
University of Arkansas at Pine Bluff
21 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
Showing 5 of 21 shared publications
Huong Tran
University of Arkansas at Fayetteville (US)
21 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 21 shared publications
Sattar Al-Kabi
University of Arkansas at Fayetteville
17 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 17 shared publications
Perry C. Grant
University of Arkansas at Fayetteville
17 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate
Showing 5 of 17 shared publications
Jifeng Liu
Dartmouth College (US)
16 shared publications
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
Showing 5 of 16 shared publications
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