Steven Akwabli
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Biography and Research Information
OverviewAI-generated summary
Steven Akwabli's research focuses on the development and characterization of germanium-tin (GeSn) avalanche photodiodes for infrared detection. His work investigates GeSn photodiodes with thick absorbers designed for short-wave infrared (SWIR) and extended SWIR detection, with some devices achieving cutoff wavelengths up to 2.7 micrometers. Akwabli also studies the role of alloy disorder scattering in high hole mobility GeSn quantum wells. He has published multiple papers on these topics, with recent work appearing in 2024 and 2026. His research collaborations at the University of Arkansas at Fayetteville include working with Justin Rudie, Perry C. Grant, Yanqing Qiu, and Quang Minh Thai, with whom he shares multiple publications.
Metrics
- h-index: 2
- Publications: 9
- Citations: 10
Selected Publications
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection (2026)
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Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering (2026)
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Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)
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Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024)
Collaboration Network
Top Collaborators
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
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