Match tier
Confirmed
Presence
Current · Arkansas
Last published
2025
Sources
OpenAlex · ORCID
Refreshed
2026-08-06
Z
Zuhuang Chen
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
High Impact
Professor
Faculty Researcher
43 h-index
167 pubs
6,447 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Zhuangg Chen's research focuses on the development and application of novel materials, with a particular emphasis on their performance in areas such as catalysis, filtration, and energy conversion. His work has explored the fundamental mechanisms behind phenomena like hydrogen spillover in electrocatalysis and the engineering of nanoparticles for biomedical applications. Chen has investigated composite materials designed for specific functionalities, including magnetic-responsive photothermal films for anti-icing and superhydrophobic coatings for anti-fouling and anti-corrosion purposes.
Further research by Chen includes the synthesis of materials for photocatalysis, such as Bi2WO6 hollow microspheres for nitrogen fixation, and energy-efficient polymer films for radiative cooling. He also contributes to the understanding of particulate matter filtration and the creation of noble metal particles on oxide supports for electrocatalysis. Chen is affiliated with the University of Arkansas at Fayetteville, where he holds the rank of Professor. His scholarship is recognized by a high h-index of 43, with over 167 publications and 6,447 citations. He has served as Co-PI on a significant NSF grant totaling $17,874,768 for the implementation of a National Silicon Carbide Research Fabrication Facility.
Metrics
- h-index: 43
- Publications: 167
- Citations: 6,447
Selected Publications
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Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity (2025)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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TCAD-Aided Investigation of Temperature-Dependent Behavior in 4H-SiC P-Channel MOSFETs Up to 500°C (2025)
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Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025)
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Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers (2025)
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Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025)
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Design and Validation of a 100 kHz Inner-Paralleled Si+SiC Hybrid Multilevel Converter for Medium-Voltage Electric Traction Drives (2025)
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A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
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Large enhancement of ferroelectric properties of perovskite oxides via nitrogen incorporation (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
Federal Grants 1 $17,874,768 total
NSF
Co-PI
Oct 2021 - Sep 2027
Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility
Collaboration Network
Top Collaborators
Pengyu Lai
University of Arkansas at Fayetteville
17 shared publications
In database
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- A review of silicon carbide CMOS technology for harsh environments
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
Showing 5 of 17 shared publications
H. Alan Mantooth
University of Arkansas at Fayetteville
15 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A Tutorial on High-Density Power Module Packaging
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
Showing 5 of 15 shared publications
Salahaldein Ahmed
University of Arkansas at Fayetteville
10 shared publications
In database
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- A Comparison between Conventional Buck and 2-pscB DC-DC Converters
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Eliminating deadtime mismatch due to inserting storage capacitor of a GaN-based two-phase series-capacitor buck DC-DC converter
Showing 5 of 10 shared publications
Peng Sun
North China Electric Power University (CN)
8 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
Showing 5 of 8 shared publications
Zhibin Zhao
North China Electric Power University (CN)
8 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
Showing 5 of 8 shared publications
Sudharsan Chinnaiyan
University of Arkansas System
8 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 8 shared publications
Hui Wang
University of Arkansas at Fayetteville
7 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
- Area-efficient dual-diode with optimized parasitic bipolar structure for rail-based ESD protections
Showing 5 of 7 shared publications
Yumeng Cai
North China Electric Power University (CN)
5 shared publications
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
- Influence of the Interface Traps Distribution on I-V and C-V Characteristics of SiC MOSFET Evaluated by TCAD Simulations
- Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
Xuebao Li
North China Electric Power University (CN)
5 shared publications
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
- Comparisons of Two Turn-off Failures Under Clamped Inductive Load in Planar FS 3.3 kV/50 A IGBT Chip
- Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
Alan Mantooth
University of Arkansas at Fayetteville
5 shared publications
In database
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Yuxiang Chen
University of Arkansas at Fayetteville
5 shared publications
In database
- A Tutorial on High-Density Power Module Packaging
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
Shui-Qing Yu
University of Arkansas at Fayetteville
4 shared publications
In database
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Zhuowen Feng
University of Arkansas System
4 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
Xiang Cui
North China Electric Power University (CN)
3 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Comparisons of Two Turn-off Failures Under Clamped Inductive Load in Planar FS 3.3 kV/50 A IGBT Chip
Lei Qi
North China Electric Power University (CN)
3 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
- Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
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