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Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
P
Pengyu Lai
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Also affiliated: National Sun Yat-sen University (2008); Xidian University (2019); University of Electronic Science and Technology of China (2025); University of Arkansas System (2025); University of Hong Kong (1999–2002); National Cheng Kung University (2020)
Faculty Researcher
9 h-index
38 pubs
264 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Pengyu Lai's research focuses on the development and characterization of semiconductor devices and materials for high-temperature and harsh environments. His work includes the design of components such as optocouplers and current sensors integrated with silicon carbide (SiC) MOSFETs and power modules. Lai has investigated methods for monitoring junction temperature in SiC MOSFETs and explored the use of Low-Temperature Cofired Ceramic (LTCC) packaging for these high-temperature applications. His publications also address the integration of gate drivers within high-density power modules and the development of SiC SCR devices for on-chip electrostatic discharge (ESD) protection. Lai collaborates with researchers at the University of Arkansas at Fayetteville, including Zhong Chen, Hui Wang, H. Alan Mantooth, and Salahaldein Ahmed, with whom he has co-authored multiple publications.
Metrics
- h-index: 9
- Publications: 38
- Citations: 264
Selected Publications
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Temperature-Dependent ESD Robustness in Micrometer 4H-SiC CMOS Technology (2026)
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An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules (2026)
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Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors (2026)
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A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2026)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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TCAD-Aided Investigation of Temperature-Dependent Behavior in 4H-SiC P-Channel MOSFETs Up to 500°C (2025)
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<i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC (2025)
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Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025)
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Design and Validation of a 100 kHz Inner-Paralleled Si+SiC Hybrid Multilevel Converter for Medium-Voltage Electric Traction Drives (2025)
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A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
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Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses (2024)
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A review of silicon carbide CMOS technology for harsh environments (2024)
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Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver (2024)
Collaboration Network
Top Collaborators
Zhong Chen
University of Arkansas at Fayetteville
15 shared publications
In database
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- A review of silicon carbide CMOS technology for harsh environments
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
Showing 5 of 15 shared publications
H. Alan Mantooth
University of Arkansas System
12 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Showing 5 of 12 shared publications
Hui Wang
University of Arkansas at Fayetteville
8 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
- Area-efficient dual-diode with optimized parasitic bipolar structure for rail-based ESD protections
- Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses
Showing 5 of 8 shared publications
Salahaldein Ahmed
University of Arkansas at Fayetteville
7 shared publications
In database
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Showing 5 of 7 shared publications
Sudharsan Chinnaiyan
University of Arkansas System
7 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 7 shared publications
Alan Mantooth
University of Arkansas at Fayetteville
4 shared publications
In database
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
Shui-Qing Yu
University of Arkansas at Fayetteville
4 shared publications
In database
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Zhong Chen
University of Arkansas at Fayetteville
4 shared publications
In database
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Design and Validation of a 100 kHz Inner-Paralleled Si+SiC Hybrid Multilevel Converter for Medium-Voltage Electric Traction Drives
- Current Injection Effect on ESD Behaviors of the Parasitic Bipolar Transistors inside P+/N-well diode
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Zhuowen Feng
University of Arkansas at Fayetteville
4 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
Peng Sun
State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
3 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- A Medium-Voltage Multilevel Hybrid Converter Using 3.3kV Silicon Carbide MOSFETs and Silicon IGBT Modules
David González
University of Arkansas at Fayetteville (US)
3 shared publications
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
Xiang Cui
North China Electric Power University (CN)
2 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
Zhibin Zhao
North China Electric Power University (CN)
2 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
Syam Madhusoodhanan
University of Arkansas at Fayetteville (US)
2 shared publications
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
Abbas Sabbar
University of Arkansas at Fayetteville
2 shared publications
In database
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
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