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Current · Arkansas
Last published
2026
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OpenAlex · ORCID
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2026-10-06
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Pengyu Lai
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Also affiliated: Xidian University (2019)
8 h-index
31 pubs
205 cited
Research Areas
Biomedical Subjects
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Biography and Research Information
OverviewAI-generated summary
Pengyu Lai's research focuses on semiconductor materials and device design, particularly for applications operating under challenging environmental conditions. His work investigates silicon carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology for harsh environments, including high-temperature circuits. Lai has published on junction temperature monitoring correction methods for SiC MOSFETs and the characterization of SiC Bipolar-Complementary-DMOS (BCD) processes for circuits operating up to 300°C.
His research also extends to antenna design, with publications on wideband integrated monopole slot antennas for WLAN/WiMAX operation in mobile phones. Lai has explored LTCC (Low-Temperature Co-fired Ceramics) based current sensors for SiC power module integration and the high-temperature analysis of optical coupling using LEDs for integrated power modules. He holds a h-index of 9 with 38 total publications and 269 citations. Key collaborators include Zuhuang Chen, Hui Wang, H. Alan Mantooth, and Salahaldein Ahmed, all from the University of Arkansas at Fayetteville.
Metrics
- h-index: 8
- Publications: 31
- Citations: 205
Selected Publications
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Temperature-Dependent ESD Robustness in Micrometer 4H-SiC CMOS Technology (2026)
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An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules (2026)
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Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors (2026)
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A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2026)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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TCAD-Aided Investigation of Temperature-Dependent Behavior in 4H-SiC P-Channel MOSFETs Up to 500°C (2025)
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A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2025)
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(Invited) High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC (2025)
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Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025)
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Design and Validation of a 100 kHz Inner-Paralleled Si+SiC Hybrid Multilevel Converter for Medium-Voltage Electric Traction Drives (2025)
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A 200 ∘C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
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Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses (2024)
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A review of silicon carbide CMOS technology for harsh environments (2024)
Collaboration Network
Top Collaborators
Zhong Chen
University of Arkansas at Fayetteville
17 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Characterization of a Silicon Carbide BCD Process for 300°C Circuits
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
Showing 5 of 17 shared publications
H. Alan Mantooth
University of Arkansas System
12 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
- Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses
Showing 5 of 12 shared publications
Hui Wang
University of Arkansas at Fayetteville
10 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Investigation of ESD Protection in SiC BCD Process
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- Investigation of parasitic bipolar transistor in rail-based electrostatic discharge (ESD) protection circuits
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
Showing 5 of 10 shared publications
Sudharsan Chinnaiyan
University of Arkansas at Fayetteville
8 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 8 shared publications
Alan Mantooth
University of Arkansas at Fayetteville
7 shared publications
In database
- Characterization of a Silicon Carbide BCD Process for 300°C Circuits
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Investigation of ESD Protection in SiC BCD Process
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
Showing 5 of 7 shared publications
Salahaldein Ahmed
University of Arkansas at Fayetteville
7 shared publications
In database
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Showing 5 of 7 shared publications
Zhuowen Feng
University of Arkansas at Fayetteville
6 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A 200 ∘C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
Showing 5 of 6 shared publications
Affan Abbasi
University of Arkansas at Fayetteville (US)
4 shared publications
- Characterization of a Silicon Carbide BCD Process for 300°C Circuits
- Investigation of ESD Protection in SiC BCD Process
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
Zhong Chen
University of Arkansas at Fayetteville
4 shared publications
In database
- Investigation of ESD Protection in SiC BCD Process
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Current Injection Effect on ESD Behaviors of the Parasitic Bipolar Transistors inside P+/N-well diode
- (Invited) High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Peng Sun
North China Electric Power University (CN)
4 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- A Medium-Voltage Multilevel Hybrid Converter Using 3.3kV Silicon Carbide MOSFETs and Silicon IGBT Modules
- An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules
Shui-Qing Yu
University of Arkansas at Fayetteville
4 shared publications
In database
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- A 200 ∘C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Sajib Roy
University of Arkansas at Fayetteville (US)
3 shared publications
- Characterization of a Silicon Carbide BCD Process for 300°C Circuits
- Investigation of ESD Protection in SiC BCD Process
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
Arman Ur Rashid
University of Arkansas at Fayetteville (US)
3 shared publications
- Characterization of a Silicon Carbide BCD Process for 300°C Circuits
- Investigation of ESD Protection in SiC BCD Process
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
David González
University of Arkansas at Fayetteville (US)
3 shared publications
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
Yuxiang Chen
University of Arkansas at Fayetteville
3 shared publications
In database
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- An Embedded High-Temperature LTCC Rogowski-Coil Current Sensor for SiC Intelligent Power Modules
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