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Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-16
S
Shiva Davari
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Grad. Student
Faculty Researcher
3 h-index
11 pubs
49 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Shiva Davari's research focuses on the study of semiconductor materials and their electronic and optical properties. Their work includes investigating the effects of strain on excitons in monolayer MoSe$_2$ and exploring phase decoherence in GeSn through measurements of weak antilocalization. Davari also examines the luminescence properties of GaN/InGaN/GaN double graded structures through experimental and simulation-based comparisons. Recent work also includes the development and study of voltage-tunable Josephson Junctions on Germanium Quantum Wells with in-situ Aluminum Contacts.
Davari has collaborated with several researchers at the University of Arkansas at Fayetteville, including Hugh Churchill, Yuriy I. Mazur, Reem Alhelais, and Morgan E. Ware. Their academic profile includes an h-index of 2, with 8 total publications and 46 citations.
Metrics
- h-index: 3
- Publications: 11
- Citations: 49
Selected Publications
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Advances and opportunities for automated robotic preparation of 2D materials and fabrication of 2D heterostructures (2026)
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Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition (2024)
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Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect (2024)
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Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures (2021)
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Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi mathvariant="normal">W</mml:mi><mml:mi>Se</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math> (2020)
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Growth and Strain Engineering of Trigonal Te for Topological Quantum Phases in Non-Symmorphic Chiral Crystals (2019)
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Growth and Strain Engineering of Trigonal Te for Topological Quantum Phases in Non-Symmorphic Chiral Crystals (2019)
Collaboration Network
Top Collaborators
Hugh Churchill
University of Arkansas at Fayetteville
2 shared publications
In database
- Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition
Mirsaeid Sarollahi
University of Arkansas at Fayetteville (US)
1 shared publication
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Pijush K. Ghosh
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Manal A. Aldawsari
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Malak I. Refaei
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Reem Alhelais
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Yuriy I. Mazur
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Morgan E. Ware
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Adelaide Bradicich
Sandia National Laboratories (US)
1 shared publication
- Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
Priyanka Petluru
Sandia National Laboratories (US)
1 shared publication
- Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
Haochen Zhao
University of Delaware (US)
1 shared publication
- Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
Siddhant Gangwal
Arizona State University (US)
1 shared publication
- Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
Chia-You Liu
National Taiwan University (TW)
1 shared publication
- Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
Dragica Vasileska
Arizona State University (US)
1 shared publication
- Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
Yuping Zeng
University of Delaware (US)
1 shared publication
- Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
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